SEMI International Standards
Standards Locale: North America
Committee: Silicon Wafer
Place of Meeting: San Francisco Marriott Marquis, CA
Date of Meeting: 07/14/2015
Meeting End Date: 07/14/2015
Recording SEMI Standards Staff: Kevin Nguyen
CER Posted to Web: 07/24/2015


Leadership Changes

Group
Previous Leader
New Leader
Int'l 450 mm Wafer TF was disbanded
Int'l Polished Wafer TFJohn Valley (Sun Edison Semiconductor) - new co-leader


Committee Structure Changes
None.

Ballot Results
Passed ballots and line items will be submitted to the ISC Audit & Review Subcommittee for procedural review.
Failed ballots and line items were returned to the originating task forces for re-work and re-balloting.
Document #
Document Title
Committee Action
A&R Forms for Approved Ballots
Doc. 5313CRevision of SEMI MF1535-0707 With Title Change To: Test Method for Carrier Recombination Lifetime in Electronic-Grade Silicon Wafers by Non-Contact Measurement of Photoconductivity Decay by Microwave ReflectancePassed5313CProcedural Review.docx5313CProcedural Review.docx
Doc. 5746 Line Item Revision of SEMI ME1392-1109, Guide for Angle Resolved Optical Scatter Measurements on Specular or Diffuse Surfaces Passed5746ProceduralReview.docx5746ProceduralReview.docx
Doc. 5655Line Item Revision to SEMI M1-0215, Specifications for Polished Single Crystal Silicon Wafers (EE Reduction)Passed5655ProceduralReview.docx5655ProceduralReview.docx
Doc. 5705Revision of SEMI M67-1109 With Title Change To: Test Method for Determining Wafer Near-Edge Geometry from a Measured Thickness Data Array Using the ESFQR, ESFQD, and ESBIR MetricsPassed5705Procedural Review.docx5705Procedural Review.docx
Doc. 5706Revision of SEMI M70-1109 With Title Change To: Test Method for Determining Wafer-Near-Edge Geometry Using Partial Wafer Site FlatnessPassed5706Procedural Review.docx5706Procedural Review.docx
Doc. 5744Line Item Revision to SEMI M49-1014, Guide for Specifying Geometry Measurement Systems for Silicon Wafers for the 130 nm to 16 nm Technology GenerationsFailed and returned to TF for reballot5744ProceduralReview.docx5744ProceduralReview.docx
Doc. 5806Revision of SEMI M68-0315 With Title Change To: Test Method for Determining Wafer Near-Edge Geometry from a Measured Height Thickness Data Array Using a Curvature Metric, ZDDPassed5806Procedural Review.docx5806Procedural Review.docx
Doc. 5807Revision of SEMI M77 -1110 With Title Change To: Test Method for Determining Wafer Near-Edge Geometry Using Roll-Off Amount, ROAPassed5807Procedural Review.docx5807Procedural Review.docx
Doc. 5805 Revision of SEMI M50-0310, Test Method for Determining Capture Rate and False Count Rate for Surface Scanning Inspection Systems by the Overlay Method Passed5805 Procedural Review.docx5805 Procedural Review.docx
Doc. 5845Reapproval of SEMI M16-1110 - Specification for Polycrystalline SiliconPassed5845Procedural Review.docx5845Procedural Review.docx
Doc. 5846Reapproval of SEMI M17-1110 - Guide for a Universal Wafer GridPassed5846Procedural Review.docx5846Procedural Review.docx
Doc. 5847Reapproval of SEMI M66-1110 Test Method to Extract Effective Work Function in Oxide and High-K Gate Stacks Using the MIS Flat Band Voltage-Insulator Thickness Technique Passed5847Procedural Review.docx5847Procedural Review.docx
Doc. 5848Reapproval of SEMI MF1153-1110 - Test Method for Characterization of Metal-Oxide Silicon (MOS) Structures by Capacitance-Voltage MeasurementsPassed5848 Procedural Review.docx5848 Procedural Review.docx
Doc. 5849Line Item Revision of SEMI MF1389-1110 - Test Methods for Photoluminescence Analysis of Single Crystal Silicon for III-V ImpuritiesPassed5849ProceduralReview.docx5849ProceduralReview.docx
Doc. 5850Reapproval of SEMI MF1529-1110 - Test Method for Sheet Resistance Uniformity Evaluation by In-Line Four-Point Probe with the Dual-Configuration ProcedurePassed5850 Procedural Review.docx5850 Procedural Review.docx
Doc. 5851Reapproval of SEMI MF1618-1110 - Practice for Determination of Uniformity of Thin Films on Silicon WafersPassed5851 Procedural Review.docx5851 Procedural Review.docx
Doc. 5852Reapproval of SEMI MF1725-1110 - Practice for Analysis of Crystallographic Perfection of Silicon IngotsPassed5852 Procedural Review.docx5852 Procedural Review.docx
Doc. 5853Reapproval of SEMI MF1726-1110 - Practice for Analysis of Crystallographic Perfection of Silicon WafersPassed5853 Procedural Review.docx5853 Procedural Review.docx
Doc. 5854 Reapproval of SEMI MF1727-1110 - Practice for Detection of Oxidation Induced Defects in Polished Silicon WafersPassed5854 Procedural Review.docx5854 Procedural Review.docx
Doc. 5855Reapproval of SEMI MF1771-1110 Test Method for Evaluating Gate Oxide Integrity by Voltage Ramp TechniqueFailed and returned to TF for reballot5855 Procedural Review.docx5855 Procedural Review.docx
Doc. 5856 Reapproval of SEMI MF1809-1110 - Guide for Selection and Use of Etching Solutions to Delineate Structural Defects in SiliconPassed5856 Procedural Review.docx5856 Procedural Review.docx
Doc. 5857Withrawal of SEMI MF2166-1110 - Practices for Monitoring Non-Contact Dielectric Characterization Systems Through Use of Special Reference WafersPassed5857 Procedural Review.docx5857 Procedural Review.docx
Doc. 5858Reapproval of SEMI MF1810-1110 - Test Method for Counting Preferentially Etched or Decorated Surface Defects in Silicon WafersPassed5858 Procedural Review.docx5858 Procedural Review.docx


Ratification Ballot Results
None.

Activities Approved by the GCS between meetings of TC Chapter meeting
None.

Authorized Activities

#
Type
SC/TF/WG
Details
5070SNARFInt'l 450 mm Wafer TFRevision to SEMI M76-0710, Specification for Developmental 450 mm Diameter Polished Single Crystal Silicon Wafers - SNARF was abandoned
5071SNARFInt'l 450 mm Wafer TFRevision to M76, Specification for developmental 450 mm diameter polished single crystal silicon wafers - SNARF was abandoned
5794SNARFInt'l 450 mm Wafer TFNew Standard: Specification Of Developmental 450mm Diameter Polished Single Crystal Notchless Silicon Wafers With Back Surface Fiducial Marks - SNARF was abandoned
5893SNARFInt'l Polished Wafer TFRevision of SEMI M1-0215 Specifications for Polished Single Crystal Silicon Wafers
5915SNARFInt'l AWG TFLine Item Revision to SEMI M1 (illustration of Geometry Parameters)
5910SNARFInt'l Annealed Wafer TFLine Item Revision of SEMI M57-0515, Specifications for Silicon Annealed Wafers
5911SNARFInt'l Epi Wafer TFLine Item Revision of SEMI M62-0515, Specifications for Silicon Epitaxial Wafers
TBDSNARFsInt'l Test Methods TFReapproval of:

•SEMI MF42-1105 (Reapproved 0611) Test Methods for Conductivity Type of Extrinsic Semiconducting Materials
•SEMI MF43-0705 (Reapproved 0611) Test Methods for Resistivity of Semiconductor Materials
•SEMI MF81-1105 (Reapproved 0611) Test Method for Measuring Radial Resistivity Variation on Silicon Wafers
•SEMI MF154-1105 (Reapproved 0611) Guide for Identification of Structures and Contaminants Seen on Specular Silicon Surfaces
•SEMI MF674-0705 (Reapproved 0611) Practice for Preparing Silicon for Spreading Resistance Measurements
•SEMI MF847-0705 (Reapproved 0611) Test Method for Measuring Crystallographic Orientation of Flats on Single Crystal Silicon Wafers by X-Ray Techniques
•SEMI MF951-0305 (Reapproved 0211) Test Method for Determination of Radial Interstitial Oxygen Variation in Silicon Wafers
•SEMI MF1152-0305 (Reapproved 0211) Test Methods for Dimensions of Notches on Silicon Wafers
•SEMI MF1239-0305 (Reapproved 0211) Test Method for Oxygen Precipitation Characteristics of Silicon Wafers by Measurement of Interstitial Oxygen Reduction
•SEMI MF2139-1103 (Reapproved 1110) Test Method for Measuring Nitrogen Concentration in Silicon Substrates by Secondary Ion Mass Spectrometry
•SEMI MF1617-0304 (Reapproved 0710) Test Method for Measuring Surface Sodium, Aluminum, Potassium, and Iron on Silicon and EPI Substrates by Secondary Ion Mass Spectrometry
•SEMI MF533-0310 Test Method for Thickness and Thickness Variation of Silicon Wafers
Note: SNARFs and TFOFs are available for review on the SEMI Web site at:
http://downloads.semi.org/web/wstdsbal.nsf/TFOFSNARF

Authorized Ballots

#
Type
SC/TF/WG
Details
5855ACycle 6/7-15Int'l Test Methods TLine Item Revision of SEMI MF1771-1110 Test Method for Evaluating Gate Oxide Integrity by Voltage Ramp Technique
5737Cycle 6-15Int'l Test Methods TFRevision of SEMI MF1391-1107 (Reapproved 0912), Test Method for Substitutional Atomic Carbon Content of Silicon by Infrared Absorption
5804Cycle 6-15Int'l Automated Advanced Surface Inspection TFRevision of SEMI M53-0310, Practice for Calibrating Scanning Surface Inspection Systems Using Certified Depositions of Monodisperse Reference Spheres on Unpatterned Semiconductor Wafer Surfaces
5859Cycle 6-15nt'l Automated Advanced Surface Inspection TFLine Item Revision of SEMI MF1811-0310, Guide for Estimating the Power Spectral Density Function and Related Finish Parameters from Surface Profile Data
5910Cycle 6/7-15Int'l Annealed Wafer TFLine Item Revision of SEMI M57-0515, Specifications for Silicon Annealed Wafers
5911Cycle 6/7-15Int'l Epi Wafer TFLine Item Revision of SEMI M62-0515, Specifications for Silicon Epitaxial Wafers
TBDCycle 6/7-15Int'l Test Methods TFReapproval of:

•SEMI MF42-1105 (Reapproved 0611) Test Methods for Conductivity Type of Extrinsic Semiconducting Materials
•SEMI MF43-0705 (Reapproved 0611) Test Methods for Resistivity of Semiconductor Materials
•SEMI MF81-1105 (Reapproved 0611) Test Method for Measuring Radial Resistivity Variation on Silicon Wafers
•SEMI MF154-1105 (Reapproved 0611) Guide for Identification of Structures and Contaminants Seen on Specular Silicon Surfaces
•SEMI MF674-0705 (Reapproved 0611) Practice for Preparing Silicon for Spreading Resistance Measurements
•SEMI MF847-0705 (Reapproved 0611) Test Method for Measuring Crystallographic Orientation of Flats on Single Crystal Silicon Wafers by X-Ray Techniques
•SEMI MF951-0305 (Reapproved 0211) Test Method for Determination of Radial Interstitial Oxygen Variation in Silicon Wafers
•SEMI MF1152-0305 (Reapproved 0211) Test Methods for Dimensions of Notches on Silicon Wafers
•SEMI MF1239-0305 (Reapproved 0211) Test Method for Oxygen Precipitation Characteristics of Silicon Wafers by Measurement of Interstitial Oxygen Reduction
•SEMI MF2139-1103 (Reapproved 1110) Test Method for Measuring Nitrogen Concentration in Silicon Substrates by Secondary Ion Mass Spectrometry
•SEMI MF1617-0304 (Reapproved 0710) Test Method for Measuring Surface Sodium, Aluminum, Potassium, and Iron on Silicon and EPI Substrates by Secondary Ion Mass Spectrometry
•SEMI MF533-0310 Test Method for Thickness and Thickness Variation of Silicon Wafers


SNARF(s) Granted a One-Year Extension
None.

SNARF(s) Cancelled
None.

Standard(s) to receive Inactive Status
None.

Special Announcements of the Committee (Workshops, Programs, etc.)
None.

Next Meeting
April 2016 in conjunction with NA Spring 2016 meeting. Check www.semi.org/standards for schedule