# | Type | SC/TF/WG | Details |
5070 | SNARF | Int'l 450 mm Wafer TF | Revision to SEMI M76-0710, Specification for Developmental 450 mm Diameter Polished Single Crystal Silicon Wafers - SNARF was abandoned |
5071 | SNARF | Int'l 450 mm Wafer TF | Revision to M76, Specification for developmental 450 mm diameter polished single crystal silicon wafers - SNARF was abandoned |
5794 | SNARF | Int'l 450 mm Wafer TF | New Standard: Specification Of Developmental 450mm Diameter Polished Single Crystal Notchless Silicon Wafers With Back Surface Fiducial Marks - SNARF was abandoned |
5893 | SNARF | Int'l Polished Wafer TF | Revision of SEMI M1-0215 Specifications for Polished Single Crystal Silicon Wafers |
5915 | SNARF | Int'l AWG TF | Line Item Revision to SEMI M1 (illustration of Geometry Parameters) |
5910 | SNARF | Int'l Annealed Wafer TF | Line Item Revision of SEMI M57-0515, Specifications for Silicon Annealed Wafers |
5911 | SNARF | Int'l Epi Wafer TF | Line Item Revision of SEMI M62-0515, Specifications for Silicon Epitaxial Wafers |
TBD | SNARFs | Int'l Test Methods TF | Reapproval of:
•SEMI MF42-1105 (Reapproved 0611) Test Methods for Conductivity Type of Extrinsic Semiconducting Materials
•SEMI MF43-0705 (Reapproved 0611) Test Methods for Resistivity of Semiconductor Materials
•SEMI MF81-1105 (Reapproved 0611) Test Method for Measuring Radial Resistivity Variation on Silicon Wafers
•SEMI MF154-1105 (Reapproved 0611) Guide for Identification of Structures and Contaminants Seen on Specular Silicon Surfaces
•SEMI MF674-0705 (Reapproved 0611) Practice for Preparing Silicon for Spreading Resistance Measurements
•SEMI MF847-0705 (Reapproved 0611) Test Method for Measuring Crystallographic Orientation of Flats on Single Crystal Silicon Wafers by X-Ray Techniques
•SEMI MF951-0305 (Reapproved 0211) Test Method for Determination of Radial Interstitial Oxygen Variation in Silicon Wafers
•SEMI MF1152-0305 (Reapproved 0211) Test Methods for Dimensions of Notches on Silicon Wafers
•SEMI MF1239-0305 (Reapproved 0211) Test Method for Oxygen Precipitation Characteristics of Silicon Wafers by Measurement of Interstitial Oxygen Reduction
•SEMI MF2139-1103 (Reapproved 1110) Test Method for Measuring Nitrogen Concentration in Silicon Substrates by Secondary Ion Mass Spectrometry
•SEMI MF1617-0304 (Reapproved 0710) Test Method for Measuring Surface Sodium, Aluminum, Potassium, and Iron on Silicon and EPI Substrates by Secondary Ion Mass Spectrometry
•SEMI MF533-0310 Test Method for Thickness and Thickness Variation of Silicon Wafers |
# | Type | SC/TF/WG | Details |
5855A | Cycle 6/7-15 | Int'l Test Methods T | Line Item Revision of SEMI MF1771-1110 Test Method for Evaluating Gate Oxide Integrity by Voltage Ramp Technique |
5737 | Cycle 6-15 | Int'l Test Methods TF | Revision of SEMI MF1391-1107 (Reapproved 0912), Test Method for Substitutional Atomic Carbon Content of Silicon by Infrared Absorption |
5804 | Cycle 6-15 | Int'l Automated Advanced Surface Inspection TF | Revision of SEMI M53-0310, Practice for Calibrating Scanning Surface Inspection Systems Using Certified Depositions of Monodisperse Reference Spheres on Unpatterned Semiconductor Wafer Surfaces |
5859 | Cycle 6-15 | nt'l Automated Advanced Surface Inspection TF | Line Item Revision of SEMI MF1811-0310, Guide for Estimating the Power Spectral Density Function and Related Finish Parameters from Surface Profile Data |
5910 | Cycle 6/7-15 | Int'l Annealed Wafer TF | Line Item Revision of SEMI M57-0515, Specifications for Silicon Annealed Wafers |
5911 | Cycle 6/7-15 | Int'l Epi Wafer TF | Line Item Revision of SEMI M62-0515, Specifications for Silicon Epitaxial Wafers |
TBD | Cycle 6/7-15 | Int'l Test Methods TF | Reapproval of:
•SEMI MF42-1105 (Reapproved 0611) Test Methods for Conductivity Type of Extrinsic Semiconducting Materials
•SEMI MF43-0705 (Reapproved 0611) Test Methods for Resistivity of Semiconductor Materials
•SEMI MF81-1105 (Reapproved 0611) Test Method for Measuring Radial Resistivity Variation on Silicon Wafers
•SEMI MF154-1105 (Reapproved 0611) Guide for Identification of Structures and Contaminants Seen on Specular Silicon Surfaces
•SEMI MF674-0705 (Reapproved 0611) Practice for Preparing Silicon for Spreading Resistance Measurements
•SEMI MF847-0705 (Reapproved 0611) Test Method for Measuring Crystallographic Orientation of Flats on Single Crystal Silicon Wafers by X-Ray Techniques
•SEMI MF951-0305 (Reapproved 0211) Test Method for Determination of Radial Interstitial Oxygen Variation in Silicon Wafers
•SEMI MF1152-0305 (Reapproved 0211) Test Methods for Dimensions of Notches on Silicon Wafers
•SEMI MF1239-0305 (Reapproved 0211) Test Method for Oxygen Precipitation Characteristics of Silicon Wafers by Measurement of Interstitial Oxygen Reduction
•SEMI MF2139-1103 (Reapproved 1110) Test Method for Measuring Nitrogen Concentration in Silicon Substrates by Secondary Ion Mass Spectrometry
•SEMI MF1617-0304 (Reapproved 0710) Test Method for Measuring Surface Sodium, Aluminum, Potassium, and Iron on Silicon and EPI Substrates by Secondary Ion Mass Spectrometry
•SEMI MF533-0310 Test Method for Thickness and Thickness Variation of Silicon Wafers |