SEMI International Standards
Standards Locale: China
Committee: HB-LED
Place of Meeting: Friend Plaza Hotel Dandong, No. 158 Middle Binjiang Road, Dandong, Liaoning, China
Date of Meeting: 10/14/2016
Meeting End Date: 10/14/2016
Recording SEMI Standards Staff: Sophia Huang
CER Posted to Web: 11/01/2016


Leadership Changes

Group
Previous Leader
New Leader
Patterned Sapphire Substrate Task Force(new TF)Jianzhe Liu(ECBO)


Committee Structure Changes
None.

Ballot Results

Document #
Document Title
Committee Action
A&R Forms for Approved Ballots
5945New Standard: Test Method for Determining Orientation of A Sapphire Single CrystalPassed as balloted5945 Procedural Review.pdf
5775ANew Standard: Specification for Sapphire Single Crystal Ingot Intended for Use for Manufacturing HB-LED WafersPassed with editorial changes 5775A Procedural Review.pdf
5723ANew Standard: Specification for Single Crystal Sapphire Intended for Use for Manufacturing HB- LED WafersPassed with editorial changes5723A Procedural Review.pdf


Ratification Ballot Results
None.

Activities Approved by the GCS between meetings of TC Chapter meeting
None.

Authorized Activities

#
Type
SC/TF/WG
Details
NEW TFOFPatterned Sapphire Substrate Task ForceThe task force has one leader and ten members. More members will join in after HB-LED China TC Chapter Fall Meeting 2016. Sophia will work with TF leader Jianzhe Liu to maintain TF roster.


Authorized Ballots

#
When
SC/TF/WG
Details
5776Cycle 8-2016GaN based LED Epitaxial Wafer Task ForceNew Standard: Test Method for Detecting Surface Defects of GaN based LED Epitaxial Wafer Used for Manufacturing HB-LED


SNARF(s) Granted a One-Year Extension
None.

SNARF(s) Cancelled
None.

Standard(s) to receive Inactive Status
None.

Special Announcements of the Committee (Workshops, Programs, etc.)
None.

Next Meeting
HB-LED Standards Spring Meeting 2017, April 20, 2017, Thursday, Wuhu, Anhui.