Document # | Document Title | Committee Action | A&R Forms for Approved Ballots |
6292 | Line Item Revision of SEMI M31-0708 Mechanical Specification For Front-Opening Shipping Box Used To Transport And Ship 300 mm Wafers (to modify the nonconforming title) | Passed as balloted | Ballot report_6292_2018.12.14 TC.pdf |
5774 | New Standard: Practice for Sample Preparation Methods for Measuring Minority Carrier Diffusion Length in Silicon Wafers by Surface Photovoltage Methods | Failed and will be reballoted | Ballot report_5774_2017.12.14 TC.pdf |
6170 | Line item Revision to SEMI M49-1016 Guide For Specifying Geometry Measurement Systems For Silicon Wafers For The 130 nm To 16 nm Technology Generations | Failed and will be reballoted | Ballot report_6170_2017.12.14 TC.pdf |
6264 | Reapproval of SEMI M8-0312 Specification for Polished Monocrystalline Silicon Test Wafers | Passed as balloted, super clean | Ballot report_6264_2017.12.14 TC.pdf |
6265 | Reapproval of SEMI M38-0312 Specification for Polished Reclaimed Silicon Wafers | Passed as balloted, super clean | Ballot report_6265_2017.12.14 TC.pdf |
6266 | Reapproval of SEMI MF110-1107 (Reapproved 0912) Test Method for Thickness of Epitaxial or Diffused Layers in Silicon by the Angle Lapping and Staining Technique | Passed as balloted, super clean | Ballot report_6266_2017.12.14 TC.pdf |
6267 | Reapproval of SEMI MF110-1107 (Reapproved 0912) Test Method for Thickness of Epitaxial or Diffused Layers in Silicon by the Angle Lapping and Staining Technique | Passed as balloted, super clean | Ballot report_6267_2017.12.14 TC.pdf |
6268 | Reapproval of SEMI MF1388-0707 (Reapproved 0412) Test Method for Generation Lifetime and Generation Velocity of Silicon Material by Capacitance-Time Measurements of Metal-Oxide-Silicon (MOS) Capacitors | Passed as balloted, super clean | Ballot report_6268_2017.12.14 TC.pdf |
6269 | Reapproval of SEMI MF1392-0307 (Reapproved 0512) Test Method for Determining Net Carrier Density Profiles in Silicon Wafers by Capacitance-Voltage Measurements with a Mercury Probe | Passed as balloted, super clean | Ballot report_6269_2017.12.14 TC.pdf |
6270 | Reapproval of SEMI MF1527-0412 Guide for Application of Certified Reference Materials and Reference Wafers for Calibration and Control of Instruments for Measuring Resistivity of Silicon | Failed and will be reballoted | Ballot report_6270_2017.12.14 TC.pdf |
6271 | Reapproval of SEMI MF1569-0307 (Reapproved 0512) Guide for Generation of Consensus Reference Materials for Semiconductor Technology | Passed as balloted, super clean | Ballot report_6271_2017.12.14 TC.pdf |
6272 | Reapproval of SEMI MF950-1107 (Reapproved 0912) Test Method For Measuring The Depth Of Crystal Damage Of A Mechanically Worked Silicon Wafer Surface By Angle Polishing And Defect Etching | Passed as balloted, super clean | Ballot report_6272_2017.12.14 TC.pdf |
6273 | Reapproval of SEMI MF1619-1107 (Reapproved 0912) Test Method for Measurement of Interstitial Oxygen Content of Silicon Wafers by Infrared Absorption Spectroscopy with p-Polarized Radiation Incident at the Brewster Angle | Passed as balloted, super clean | Ballot report_6273_2017.12.14 TC.pdf |
6274 | Reapproval of SEMI MF1630-1107 (Reapproved 0912) Test Method for Low Temperature FT-IR Analysis of Single Crystal Silicon for III-V Impurities | Passed as balloted, super clean | Ballot report_6274_2017.12.14 TC.pdf |
6275 | Reapproval of SEMI MF2074-0912 Guide for Measuring Diameter of Silicon and Other Semiconductor Wafers | Passed as balloted, super clean | Ballot report_6275_2017.12.14 TC.pdf |
6276 | Reapproval of SEMI MF374-0312 Test Method for Sheet Resistance of Silicon Epitaxial, Diffused, Polysilicon, and Ion-implanted Layers Using an In-Line Four-Point Probe with the Single-Configuration Procedure | Passed as balloted, super clean | Ballot report_6276_2017.12.14 TC.pdf |
6277 | Reapproval of SEMI MF397-0812 Test Method for Resistivity of Silicon Bars Using a Two-Point Probe | Passed as balloted, super clean | Ballot report_6277_2017.12.14 TC.pdf |
6278 | Reapproval of SEMI MF523-1107 (Reapproved 1012) Practice for Unaided Visual Inspection of Polished Silicon Wafer Surfaces | Passed as balloted, super clean | Ballot report_6278_2017.12.14 TC.pdf |
6279 | Reapproval of SEMI MF525-0312 Test Method for Measuring Resistivity of Silicon Wafers Using a Spreading Resistance Probe | Passed as balloted, super clean | Ballot report_6279_2017.12.14 TC.pdf |
6280 | Reapproval of SEMI MF576-0812 Test Method for Measurement of Insulator Thickness and Refractive Index on Silicon Substrates by Ellipsometry | Passed as balloted, super clean | Ballot report_6280_2017.12.14 TC.pdf |
6281 | Reapproval of SEMI MF84-0312 Test Method For Measuring Resistivity Of Silicon Wafers With An In-Line Four-Point Probe | Passed as balloted, super clean | Ballot report_6281_2017.12.14 TC.pdf |
6282 | Reapproval of SEMI MF671-0312 Test Method for Measuring Flat Length on Wafers of Silicon and Other Electronic Materials | Passed as balloted, super clean | Ballot report_6282_2017.12.14 TC.pdf |
6283 | Reapproval of SEMI MF95-1107 (Reapproved 1012) Test Method For Thickness Of Lightly Doped Silicon Epitaxial Layers On Heavily Doped Silicon Substrates Using An Infrared Dispersive Spectrophotometer | Passed as balloted, super clean | Ballot report_6283_2017.12.14 TC.pdf |
6284 | Reapproval of SEMI M56-0307 (Reapproved 0512) Practice for Determining Cost Components for Metrology Equipment Due to Measurement Variability and Bias | Failed and will be reballoted, | Ballot report_6284_2017.12.14 TC.pdf |