SEMI International Standards
Standards Locale: Japan
Committee: Silicon Wafer
Place of Meeting: Tokyo Big Sight, Tokyo, Japan
Date of Meeting: 12/14/2017
Meeting End Date: 12/14/2017
Recording SEMI Standards Staff: Junko Collins
CER Posted to Web: 12/26/2017


Leadership Changes
None.

Committee Structure Changes
None.

Ballot Results

Table 1
Document #
Document Title
Committee Action
A&R Forms for Approved Ballots
6292Line Item Revision of SEMI M31-0708 Mechanical Specification For Front-Opening Shipping Box Used To Transport And Ship 300 mm Wafers (to modify the nonconforming title)Passed as ballotedBallot report_6292_2018.12.14 TC.pdfBallot report_6292_2018.12.14 TC.pdf
5774New Standard: Practice for Sample Preparation Methods for Measuring Minority Carrier Diffusion Length in Silicon Wafers by Surface Photovoltage MethodsFailed and will be reballoted Ballot report_5774_2017.12.14 TC.pdf
6170Line item Revision to SEMI M49-1016 Guide For Specifying Geometry Measurement Systems For Silicon Wafers For The 130 nm To 16 nm Technology GenerationsFailed and will be reballotedBallot report_6170_2017.12.14 TC.pdfBallot report_6170_2017.12.14 TC.pdf
6264Reapproval of SEMI M8-0312 Specification for Polished Monocrystalline Silicon Test WafersPassed as balloted, super cleanBallot report_6264_2017.12.14 TC.pdfBallot report_6264_2017.12.14 TC.pdf
6265Reapproval of SEMI M38-0312 Specification for Polished Reclaimed Silicon WafersPassed as balloted, super cleanBallot report_6265_2017.12.14 TC.pdfBallot report_6265_2017.12.14 TC.pdf
6266Reapproval of SEMI MF110-1107 (Reapproved 0912) Test Method for Thickness of Epitaxial or Diffused Layers in Silicon by the Angle Lapping and Staining TechniquePassed as balloted, super cleanBallot report_6266_2017.12.14 TC.pdfBallot report_6266_2017.12.14 TC.pdf
6267Reapproval of SEMI MF110-1107 (Reapproved 0912) Test Method for Thickness of Epitaxial or Diffused Layers in Silicon by the Angle Lapping and Staining TechniquePassed as balloted, super cleanBallot report_6267_2017.12.14 TC.pdfBallot report_6267_2017.12.14 TC.pdf
6268Reapproval of SEMI MF1388-0707 (Reapproved 0412) Test Method for Generation Lifetime and Generation Velocity of Silicon Material by Capacitance-Time Measurements of Metal-Oxide-Silicon (MOS) CapacitorsPassed as balloted, super cleanBallot report_6268_2017.12.14 TC.pdfBallot report_6268_2017.12.14 TC.pdf
6269Reapproval of SEMI MF1392-0307 (Reapproved 0512) Test Method for Determining Net Carrier Density Profiles in Silicon Wafers by Capacitance-Voltage Measurements with a Mercury ProbePassed as balloted, super cleanBallot report_6269_2017.12.14 TC.pdfBallot report_6269_2017.12.14 TC.pdf
6270Reapproval of SEMI MF1527-0412 Guide for Application of Certified Reference Materials and Reference Wafers for Calibration and Control of Instruments for Measuring Resistivity of SiliconFailed and will be reballotedBallot report_6270_2017.12.14 TC.pdfBallot report_6270_2017.12.14 TC.pdf
6271Reapproval of SEMI MF1569-0307 (Reapproved 0512) Guide for Generation of Consensus Reference Materials for Semiconductor TechnologyPassed as balloted, super cleanBallot report_6271_2017.12.14 TC.pdfBallot report_6271_2017.12.14 TC.pdf
6272Reapproval of SEMI MF950-1107 (Reapproved 0912) Test Method For Measuring The Depth Of Crystal Damage Of A Mechanically Worked Silicon Wafer Surface By Angle Polishing And Defect EtchingPassed as balloted, super cleanBallot report_6272_2017.12.14 TC.pdfBallot report_6272_2017.12.14 TC.pdf
6273Reapproval of SEMI MF1619-1107 (Reapproved 0912) Test Method for Measurement of Interstitial Oxygen Content of Silicon Wafers by Infrared Absorption Spectroscopy with p-Polarized Radiation Incident at the Brewster AnglePassed as balloted, super cleanBallot report_6273_2017.12.14 TC.pdfBallot report_6273_2017.12.14 TC.pdf
6274Reapproval of SEMI MF1630-1107 (Reapproved 0912) Test Method for Low Temperature FT-IR Analysis of Single Crystal Silicon for III-V ImpuritiesPassed as balloted, super cleanBallot report_6274_2017.12.14 TC.pdfBallot report_6274_2017.12.14 TC.pdf
6275Reapproval of SEMI MF2074-0912 Guide for Measuring Diameter of Silicon and Other Semiconductor WafersPassed as balloted, super cleanBallot report_6275_2017.12.14 TC.pdfBallot report_6275_2017.12.14 TC.pdf
6276Reapproval of SEMI MF374-0312 Test Method for Sheet Resistance of Silicon Epitaxial, Diffused, Polysilicon, and Ion-implanted Layers Using an In-Line Four-Point Probe with the Single-Configuration ProcedurePassed as balloted, super cleanBallot report_6276_2017.12.14 TC.pdfBallot report_6276_2017.12.14 TC.pdf
6277Reapproval of SEMI MF397-0812 Test Method for Resistivity of Silicon Bars Using a Two-Point ProbePassed as balloted, super cleanBallot report_6277_2017.12.14 TC.pdfBallot report_6277_2017.12.14 TC.pdf
6278Reapproval of SEMI MF523-1107 (Reapproved 1012) Practice for Unaided Visual Inspection of Polished Silicon Wafer SurfacesPassed as balloted, super cleanBallot report_6278_2017.12.14 TC.pdfBallot report_6278_2017.12.14 TC.pdf
6279Reapproval of SEMI MF525-0312 Test Method for Measuring Resistivity of Silicon Wafers Using a Spreading Resistance ProbePassed as balloted, super cleanBallot report_6279_2017.12.14 TC.pdfBallot report_6279_2017.12.14 TC.pdf
6280Reapproval of SEMI MF576-0812 Test Method for Measurement of Insulator Thickness and Refractive Index on Silicon Substrates by EllipsometryPassed as balloted, super cleanBallot report_6280_2017.12.14 TC.pdfBallot report_6280_2017.12.14 TC.pdf
6281Reapproval of SEMI MF84-0312 Test Method For Measuring Resistivity Of Silicon Wafers With An In-Line Four-Point ProbePassed as balloted, super cleanBallot report_6281_2017.12.14 TC.pdfBallot report_6281_2017.12.14 TC.pdf
6282Reapproval of SEMI MF671-0312 Test Method for Measuring Flat Length on Wafers of Silicon and Other Electronic MaterialsPassed as balloted, super cleanBallot report_6282_2017.12.14 TC.pdfBallot report_6282_2017.12.14 TC.pdf
6283Reapproval of SEMI MF95-1107 (Reapproved 1012) Test Method For Thickness Of Lightly Doped Silicon Epitaxial Layers On Heavily Doped Silicon Substrates Using An Infrared Dispersive SpectrophotometerPassed as balloted, super cleanBallot report_6283_2017.12.14 TC.pdfBallot report_6283_2017.12.14 TC.pdf
6284Reapproval of SEMI M56-0307 (Reapproved 0512) Practice for Determining Cost Components for Metrology Equipment Due to Measurement Variability and BiasFailed and will be reballoted,Ballot report_6284_2017.12.14 TC.pdfBallot report_6284_2017.12.14 TC.pdf
Note 1: Passed ballots and line items will be submitted to the ISC Audit & Review Subcommittee for procedural review.

Note 2: Failed ballots and line items were returned to the originating task forces for re-work and re-balloting or abandoning.



Ratification Ballot Results
None.

Activities Approved by the GCS between meetings of TC Chapter meeting
None.

Authorized Activities
None.

Authorized Ballots


#
When
TF
Details
6207Cycle 5 or earlier, for TC Chapter review at SW2017International AWGLine Items Revision to SEMI M1-1016, Specification for Polished Single Crystal Silicon Wafers (Add Shape metrics of Bow 3p in appendix 2 which was mistakenly removed at previous ballot, and add Illustrations of Shape Metrics for Silicon Wafers in Appendix 2.)



SNARF(s) Granted a One-Year Extension

#
TF
Title
Expiration Date
5834International Test MethodLine Item Revision to SEMI M85-1014: Guide for the Measurement of Trace Metal Contamination on Silicon Wafer Surface by Inductively Coupled Plasma Mass Spectrometry2018/02/23



SNARF(s) Cancelled
None.

Standard(s) to receive Inactive Status
None.

Special Announcements of the Committee (Workshops, Programs, etc.)
None.

Next Meeting
Next Meeting will be held on Friday, April 20 2018, 14:00-17:00 at SEMI Japan Office (Room 2).