SEMI International Standards
Standards Locale: North America
Committee: Silicon Wafer
Place of Meeting: Intel, Santa Clara, CA
Date of Meeting: 04/01/2014
Meeting End Date: 04/01/2014
Recording SEMI Standards Staff: Kevin Nguyen
CER Posted to Web: 04/03/2014


Leadership Changes

Previous Name
New Name
Int'l Advanced Surface Inspection TFInt'l Automated Advance Surface Inspection TF


Committee Structure Changes
None.

Ballot Results

Document #
Document Title
Committee Action
A&R Forms for Approved Ballots
5663Reapproval of SEMI M58-1109, Test Method for Evaluating DMA Based Particle Deposition Systems and ProcessesPassed as balloted5663ProceduralReview.pdf
5665Line Item Revision of SEMI MF26-0305 (Reapproved 0211), Test Method for Determining the Orientation of a Semiconductive Single CrystalSee below5665ProceduralReview.pdf
Line Item 1: Delete Note 1 and correct Equations 8 and 9 as shown.Pass as balloted


Ratification Ballot Results
None.

Activities Approved by the GCS between meetings of TC Chapter meeting
None.

Authorized Activities

#
Type
SC/TF/WG
Details
5404SNARFInt'l Test Methods TFSNARF was modified
From:
Reapproval of SEMI MF657-0707E Test Method for Measuring Warp and Total Thickness Variation on Silicon Wafers by Noncontact Scanning

To:
Withdrawal of SEMI MF657-0707E Test Method for Measuring Warp and Total Thickness Variation on Silicon Wafers by Noncontact Scanning
5604SNARFInt'l Polished Wafer TFSNARF was modified
From:
Revision to SEMI M1-0114, Specification for Polished Single Crystal Silicon Wafer (Re: Addition of Notchless 450 mm Wafers)

To:
Line Item Revision to SEMI M1-0114, Specification for Polished Single Crystal Silicon Wafer and SEMI M20-0110, Practice for Establishing a Wafer Coordinate System (Re: Addition of Notchless 450 mm Wafers)
5313SNARFInt'l Test Methods TFSNARF was modified
From:
Line Item Revision of SEMI MF1535-0707 Test Method for Carrier Recombination Lifetime in Silicon Wafers by Noncontact Measurement of Photoconductivity Decay by Microwave Reflectance

To:
Revision of SEMI MF1535-0707 Test Method for Carrier Recombination Lifetime in Silicon Wafers by Noncontact Measurement of Photoconductivity Decay by Microwave Reflectance
5701SNARFInt'l Polished Wafer TFLine Item Revision of SEMI M1-0114, Specifications for Polished Single Crystal Silicon Wafers, to correct references to test methods for measurement of front surface chemistry
5702SNARFInt'l Advanced Wafer Geometry TFLine Item Revision to M68-1108, Practice for Determining Wafer Near-Edge Geometry from a Measured Height Data Array using a Curvature Metric, ZDD
5703SNARFInt'l Test Methods TFNew Standard: Guide for Carrier Recombination Lifetime Measurements in Electronic Grade Silicon
5704SNARFInt'l Advanced Wafer Geometry TFReapproval of SEMI M43-1109, Guide for Reporting Wafer Nanotopgraphy
5705SNARFInt'l Advanced Wafer Geometry TFReapproval of SEMI M67-1109, Practice for Determining Wafer Near-Edge Geometry from a Measured Thickness Data Array Using the ESFQR, ESFQD, and ESBIR Metrics
5706SNARFInt'l Advanced Wafer Geometry TFReapproval of SEMI M70-1109 Practice for Determining Wafer-Near-Edge Geometry Using Partial Wafer Site Flatness
5707SNARFInt'l Test Methods TFRevision of SEMI M40-1109, Guide for Measurement of Roughness of Planar Surfaces on Silicon Wafers with title change to Guide for Measurement of Roughness of Planar Surfaces on Polished Wafers
Int'l Test Methods TFSEMI MF1723-1104, Practice for Evaluation of Polycrystalline Silicon Rods by Float-Zone Crystal Growth and Spectroscopy
Voted to be inactive
Int'l Test Methods TFSEMI MF1724-1104, Test Method for Measuring Surface Metal Contamination of Polycrystalline Silicon by Acid Extraction-Atomic Absorption Spectroscopy
Voted to be inactive
Int'l Test Methods TFSEMI MF1708-1104, Practice for Evaluation of Granular Polysilicon by Melter-Zoner Spectroscopies
Voted to be inactive
.

Authorized Ballots


#
When
SC/TF/WG
Details
5604Cycle 4-14Int'l Polished Wafer TFLine Item Revision to SEMI M1-0114, Specification for Polished Single Crystal Silicon Wafer and SEMI M20-0110, Practice for Establishing a Wafer Coordinate System (Re: Addition of Notchless 450 mm Wafers)
5666Cycle 4-14Int'l Test Methods TFRevision of SEMI MF928-314, Test Methods for Edge Contour of Circular Wafers and Rigid Disk Substrates
5662Cycle 3-14Int'l Automated Advance Surface Inspection TFRevision of SEMI M35-1107, Guide for Developing Specifications for Silicon Wafer Surface Features Detected by Automated Inspection
5077Cycle 3-14Int'l Test Methods TFRevision of SEMI M40-1109, Guide for Measurement of Roughness of Planar Surfaces on Silicon Wafers with title change to Guide for Measurement of Roughness of Planar Surfaces on Polished Wafers
5539Cycle 3-14Int'l Advanced Wafer Geometry TFRevision of SEMI MF1390-0707 (Reapproved 0512) With Title Change To: Test Method for Measuring Bow and Warp on Silicon Wafers by Automated NonContact Scanning
5404Cycle 3-14Int'l Test Methods TFWithdrawal of SEMI MF657-0707E Test Method for Measuring Warp and Total Thickness Variation on Silicon Wafers by Noncontact Scanning



SNARF(s) Granted a One-Year Extension
None.

SNARF(s) Cancelled
None.

Standard(s) to receive Inactive Status
None.

Special Announcements of the Committee (Workshops, Programs, etc.)
None.

Next Meeting
The next meeting will be in conjunction with SEMICON West Standards Meetings at the San Francisco Marriott Marquis in San Francisco, California. The committee will meet on Tuesday, July 8, 2014 from 2:00 PM-5:30 PM. See attached Excel file for draft schedule. Check http://www.semi.org/standards for the latest schedules.
SchSiWfr 0714 Tentative.xlsx