SEMI International Standards
Standards Region: Japan
Committee: Silicon Wafer
Place of Meeting: Tokyo Big Sight
Date of Meeting: 12/12/2019
Recording SEMI Standards Staff: Junko Collins
CER Posted to Web: 12/23/2019


Leadership Changes

WG/TF/SC/TC Name
Previous Leader
New Leader
International Advanced Automated Surface Inspection TFMasami Ikota, Hitachi High-TechnologiesKenji Oka, Hitachi High-Technologies
Committee Structure Changes
None.

Ballot Results

Document #
Document Title
Committee Action
A&R Forms for Approved Ballots
6168Line Item Revision to SEMI M67-1015: TEST METHOD FORDETREMINING WAFER NEAR-EDGE GEOMETRY FROM AMEASURED THICKNESS DATA ARRAY USING THE ESFQR, ESFQDAND ESBIR METRICS, to add exclusion windows to prevent distorted area data
Line Item 1
Adding exclusion windows to determine valid sector for ESFQR ESFQD and ESBIRDPassed as balloted#6168 Ballot Report(LI)_R0.1.pdf#6168 Ballot Report(LI)_R0.1.pdf
6505Line Item Revision to SEMI M68-1015: TEST METHOD FOR DETERMINING WAFER NEAR-EDGE GEOMETRY FROM A MEASURED HIGHT DATA ARRAY USING A CURVATURE METRICS, ZDD to add exclusion windows to prevent distorted area data
Line Item 1
Adding exclusion windows to determine valid sector for ZDDPassed as balloted#6505 Ballot Report(LI)_R0.1.pdf#6505 Ballot Report(LI)_R0.1.pdf
6526ANEW STANDARD: TEST METHOD FOR BULK MICRO DEFECT DENSITY AND DENUDED ZONE WIDTH IN ANNEALED SILICON WAFERS BY OPTICAL MICROSCOPY AFTER PREFERENTIAL ETCHINGFailed
Note 1: Passed ballots and line items will be submitted to the ISC Audit & Review Subcommittee for procedural review.

Note 2: Failed ballots and line items were returned to the originating task forces for re-work and re-balloting or abandoning.



Activities Approved by the GCS between meetings of TC Chapter meeting
None.

Authorized Activities
None.

Authorized Ballots
Listing of documents authorized by the Originating TC Chapter for Letter Ballot.
#
When
TF
Details
5981C2-2020Int’l Test MethodNew Standard: Test Method for Recombination Lifetime of the Epilayer of the Silicon Epitaxial Wafer (p/p+, n/n+) by the Short Wavelength excitation Microwave Photoconductive Decay Method
6526BC2-2020Int’l Test MethodNew Standard: Test Method for Bulk Micro Defect Density and Denuded Zone Width in Annealed Silicon Wafers by Optical Microscopy After Preferential Etching
SNARF(s) Granted a One-Year Extension
None.

SNARF(s) Abolished
None.

Standard(s) to receive Inactive Status
None.

Special Announcements of the Committee (Workshops, Programs, etc.)
None.

Next Meeting

Next Meeting

April 15, Wednesday, 14:00-17:00, SEMI Japan Office, Japan Spring Meeting