SEMI International Standards
Committee Structure Changes
|Standards Region: Japan|
|Committee: Silicon Wafer|
|Place of Meeting: Tokyo Big Sight|
|Date of Meeting: 12/12/2019|
|Recording SEMI Standards Staff: Junko Collins|
|CER Posted to Web: 12/23/2019|
Note 1: Passed ballots and line items will be submitted to the ISC Audit & Review Subcommittee for procedural review.
A&R Forms for Approved Ballots
|6168||Line Item Revision to SEMI M67-1015: TEST METHOD FORDETREMINING WAFER NEAR-EDGE GEOMETRY FROM AMEASURED THICKNESS DATA ARRAY USING THE ESFQR, ESFQDAND ESBIR METRICS, to add exclusion windows to prevent distorted area data|
Line Item 1
|Adding exclusion windows to determine valid sector for ESFQR ESFQD and ESBIRD||Passed as balloted||#6168 Ballot Report(LI)_R0.1.pdf|
|6505||Line Item Revision to SEMI M68-1015: TEST METHOD FOR DETERMINING WAFER NEAR-EDGE GEOMETRY FROM A MEASURED HIGHT DATA ARRAY USING A CURVATURE METRICS, ZDD to add exclusion windows to prevent distorted area data|
Line Item 1
|Adding exclusion windows to determine valid sector for ZDD||Passed as balloted||#6505 Ballot Report(LI)_R0.1.pdf|
|6526A||NEW STANDARD: TEST METHOD FOR BULK MICRO DEFECT DENSITY AND DENUDED ZONE WIDTH IN ANNEALED SILICON WAFERS BY OPTICAL MICROSCOPY AFTER PREFERENTIAL ETCHING||Failed|
Note 2: Failed ballots and line items were returned to the originating task forces for re-work and re-balloting or abandoning.
Activities Approved by the GCS between meetings of TC Chapter meeting
Listing of documents authorized by the Originating TC Chapter for Letter Ballot.
SNARF(s) Granted a One-Year Extension
Standard(s) to receive Inactive Status
Special Announcements of the Committee (Workshops, Programs, etc.)
|5981||C2-2020||Int’l Test Method||New Standard: Test Method for Recombination Lifetime of the Epilayer of the Silicon Epitaxial Wafer (p/p+, n/n+) by the Short Wavelength excitation Microwave Photoconductive Decay Method|
|6526B||C2-2020||Int’l Test Method||New Standard: Test Method for Bulk Micro Defect Density and Denuded Zone Width in Annealed Silicon Wafers by Optical Microscopy After Preferential Etching|
April 15, Wednesday, 14:00-17:00, SEMI Japan Office, Japan Spring Meeting
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