SEMI International Standards
| Standards Locale: China |
| Committee: HB-LED |
Place of Meeting:
Quanzhou Hotel (NanXin Building 3F, Kylin Ball Room, No. 22, Zhuangfu Lane, Licheng District, 362000 Quanzhou, China)
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| Date of Meeting: 04/18/2018 |
| Meeting End Date: 04/18/2018 |
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| Recording SEMI Standards Staff: Sophia Huang |
| CER Posted to Web: 04/23/2018 |
Leadership Changes
None.
Committee Structure Changes
Previous WG/TF/SC Name | New WG/TF/SC Name or Status Change |
| None | HB-LED Equipment Communication Interface Task Force (new) |
Ballot Results
Document # | Document Title | Committee Action | A&R Forms for Approved Ballots |
| R5776A | New Standard: Test Method for Detecting Surface Defects of GaN based LED Epitaxial Wafer Used for Manufacturing HB-LED | Pending A&R |  |
| 5723C | New Standard: Specification for Single Crystal Sapphire Intended for Use for Manufacturing HB- LED Wafers Discussion | Passed, with technical changes; Ratification Ballot to be issued |  5723C Ballot Report.docx |
| 5775C | New Standard: Specification for Sapphire Single Crystal Ingot Intended for Use for Manufacturing HB-LED Wafers Discussion | Failed and reballot in cycle 4 or 5-2018 | |
Note 1: Passed ballots and line items will be submitted to the ISC Audit & Review Subcommittee for procedural review.
Note 2: Failed ballots and line items were returned to the originating task forces for re-work and re-balloting or abandoning.
Ratification Ballot Results
None.
Activities Approved by the GCS between meetings of TC Chapter meeting
None.
Authorized Activities
# | Type | SC/TF/WG | Details |
| 6370 | SNARF | HB-LED Equipment Communication Interface Task Force | New Standard: Specification of Susceptors for HB-LED MOCVD Equipment Communication Interface |
| 6371 | SNARF | Patterned Sapphire Substrate Task Force | New Standard: Test Method for Determining Geometrical Parameters of Patterns on Patterned Sapphire Substrate |
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Authorized Ballots
# | When | TF | Details |
| R5723C | Cycle 4 or 5 - 2018 | Single Crystal Sapphire Task Force | New Standard: Specification for Single Crystal Sapphire Intended for Use for Manufacturing HB- LED Wafers |
| 5775D | Cycle 4 or 5 – 2018 | Sapphire Single Crystal Ingot Task Force | New Standard: Specification for Sapphire Single Crystal Ingot Intended for Use for Manufacturing HB-LED Wafers |
| 6192 | Cycle 4 or 5 - 2018 | Patterned Sapphire Substrate Task Force | New Standard: Specification for Dry Etching Patterned Sapphire Substrate (DPSS) |
SNARF(s) Granted a One-Year Extension
# | TF | Title | Expiration Date |
| 5629 | Single Crystal Sapphire Task Force | New Standard: Guide for Identification Defects on Bare Surfaces of Sapphire Wafers | 2019/7/11 |
SNARF(s) Cancelled
None.
Standard(s) to receive Inactive Status
None.
Special Announcements of the Committee (Workshops, Programs, etc.)
None.
Next Meeting
Wednesday, October 244th, 2018, Nanchang, Jiangxi, Nanchang, China HB-LED Standards Fall Meeting 2018
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