SEMI International Standards
Standards Locale: China |
Committee: HB-LED |
Place of Meeting: HanJue Hotel Wuhu, No.87 North Yinhu Road, Wuhu, Anhui |
Date of Meeting: 04/20/2017 |
Meeting End Date: 04/20/2017 |
|
Recording SEMI Standards Staff: Sophia Huang |
CER Posted to Web: 05/05/2017 |
Leadership Changes
None.
Committee Structure Changes
None.
Ballot Results
Document # | Document Title | Committee Action | A&R Forms for Approved Ballots |
5776 | New Standard: Test Method for Detecting Surface Defects of GaN based LED Epitaxial Wafer Used for Manufacturing HB-LED | Failed and return to TF for re-work and reballot in Cycle 5-2017 | |
Ratification Ballot Results
None.
Activities Approved by the GCS between meetings of TC Chapter meeting
None.
Authorized Activities
# | SC/TF/WG | Details |
6192 | Pattern Sapphire Substrate Task Force | New Standard: Specification for Dry etching Patterned Sapphire Substrate (DPSS) |
Authorized Ballots
# | When | TF | Details |
5776A | Cycle 5-2017 or Cycle 6-2017 | GaN based LED Epitaxial Wafer Task Force | New Standard: Test Method for Detecting Surface Defects of GaN based LED Epitaxial Wafer Used for Manufacturing HB-LED |
5723B | Cycle 5-2017 or Cycle 6-2017 | Single Crystal Sapphire Task Force | New Standard: Specification for Single Crystal Sapphire Intended for Use for Manufacturing HB- LED Wafers |
5775B | Cycle 5-2017 or Cycle 6-2017 | Sapphire Single Crystal Ingot Task Force | New Standard: Specification for Sapphire Single Crystal Ingot Intended for Use for Manufacturing HB-LED Wafers |
SNARF(s) Granted a One-Year Extension
# | TF | Title | Expiration Date |
5723B | Single Crystal Sapphire Task Force | New Standard: Specification for Single Crystal Sapphire Intended for Use for Manufacturing HB- LED Wafers | 2018/05/22 |
5775B | Sapphire Single Crystal Ingot Task Force | New Standard: Specification for Sapphire Single Crystal Ingot Intended for Use for Manufacturing HB-LED Wafers | 2018/09/19 |
5776A | GaN based LED Epitaxial Wafer Task Force | New Standard: Test Method for Detecting Surface Defects of GaN based LED Epitaxial Wafer Used for Manufacturing HB-LED | 2018/09/19 |
5629 | Single Crystal Sapphire Task Force | New Standard: Guide for Identification Defects on Bare Surfaces of Sapphire Wafers | 2017/07/11 |
SNARF(s) Cancelled
None.
Standard(s) to receive Inactive Status
None.
Special Announcements of the Committee (Workshops, Programs, etc.)
None.
Next Meeting
December 12, 2017, Thursday, SEMI China Office,HB-LED Standards Winter Meeting 2017
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