Group | Previous Leader | New Leader |
Reclaim Wafer TF
*This TF was disbanded. | Hisashi Taniguchi - Hamada Heavy Industries | -- |
| Kenji Konno - Mimasu Semiconductor Industry | -- |
| Japan Test Method TF | Ryuji Takeda - GlobalWafers Japan | Ryuji Takeda - GlobalWafers Japan remains. |
| Ohtsuki Tsuyoshi - Shin-Etsu Handotai | Ohtsuki Tsuyoshi - Shin-Etsu Handotai remains. |
| Yoshimi Shiramizu | Mikako Omata - SCAS becomes a new co-leader of the TF |
| International Advanced Surface Inspection TF | Hideo Ohta - Hitachi High Technologies | Masami Ikota - Hitachi High Technologies
becomes a new co-leader of the TF |
| Yusuke Tamaki - ATMI Japan | Yusuke Tamaki - ATMI Japan remains. |
Document # | Document Title | Committee Action | A&R Forms for Approved Ballots |
| 5583 | Line Items Revision to SEMI M57-0413, Specifications for Silicon Annealed Wafers |  |  5583_Ballotreport.pdf |
| Line Item 1 | Table R1-1, Line 2-6.1 Column for 32 nm Technology Generation: Delete superscript #4 | Passed as balloted (Super clean) | |
| Line Item 2 | Table R1-2, Line 2-6.1 Column for 22 nm Technology Generation: Delete superscript #4 and related note. | Passed as balloted (Super clean) | |
| 5542 | Line Items Revision to SEMI M62-0413, Specifications for Silicon Epitaxial Wafers | |  5542_Ballotreport.pdf |
| Line Item 1 | Table R2-7: 1) Add missing Diameter for ¶2-6.1, and 2) Change Nanotopography value for ¶3-2.7. Remove “Or As agreed between supplier and customer” and change related explanation #9 | Passed as balloted | |
| Line Item 2 | Table R2-8: 1)Add substrate category in ¶2-6, 2) Add missing diameter for ¶2-6.1, and
3) Change Nanotopography value for ¶3-2.7. Remove “Or As agreed between supplier and customer” and change related explanation #9 | Passed as balloted | |
| 4844B | New Standard: Guide for the Measurement of Trace Metal Contamination on Silicon Wafer Surface by Inductively Coupled Plasma Mass Spectrometry | Failed
ballots were returned to the originating task forces for re-work and re-balloting. |  4844B_Ballotreport.pdf |
| 5389A | Revision to MF1982-1110, Test Methods for Analyzing Organic Contaminants on Silicon Wafer Surfaces by Thermal Desorption Gas Chromatography | Passed as balloted |  5389A_Ballotreport.pdf |
| 5500 | New Standard: Specifications for Polished Single Crystal Silicon Wafers for Gallium Nitride-On-Silicon Applications | Passed as balloted |  5500_Ballotreport.pdf |
| 5605 | Line Item Revision to SEMI M1-1013, Specifications for Polished Single Crystal Silicon Wafers (Subj:Flatness/SFQR change for 16nm technology generation) | | |
| Line Item 1 | Change Row 2-6 and footnote 6 of Table R1-1 | Passed as balloted (Super clean) |  5605_Ballotreport.pdf |
| 5651 | Line Item Revision of SEMI M80-0812, Mechanical Specification for Front-Opening Shipping Box Used to Transport and Ship 450 mm Wafers | | |
| Line Item 1 | Correct the Formula of Paragraph A3-1.6 in Appendix 3 (Method for Measuring Carrier Center of Gravity) of SEMI M80-0812 | Passed as balloted (Super clean) |  5651_Ballotreport.pdf |
| 5653 | Line Item Revision of SEMI M1-1013, Specifications for Polished Single Crystal Silicon Wafers (Subj: To correct errors from previous ballot) | | |
| Line Item 1 | Change ¶6.6.3.2 and the last sentence in ¶6.6.3.2.2.1 | Passed as balloted (Super clean) |  5653_Ballotreport.pdf |
# | When | SC/TF/WG | Details |
| 5655 | Cycle 2 - 2014 | International Polished Wafers TF | Line Item Revision of SEMI M1-1013, Specifications for Polished Single Crystal Silicon Wafers, to update 450 mm wafers edge exclusion |
| 5687 | Cycle 1 -2014 | International Test Methods TF | Line Item Revision of SEMI M60-1113, Test Method for Time Dependent Dielectric Breakdown Characteristics of Amorphous SiO2 Films for Silicon Wafer Evaluation |
| 5654 | Cycle 2 - 2014 | International Advanced Wafer Geometry TF | Line Item Revision of M49-0613, Guide for Specifying Geometry Measurements Systems for Silicon Wafers for the 130 nm to 16 nm Technology Generations (EE from 2mm to 1.5mm at 16nm technology generation) |