SEMI International Standards
Standards Locale: China |
Committee: HB-LED |
Place of Meeting: #158,Zhongxing Avenue, Nangang District, Harbin |
Date of Meeting: 09/19/2014 |
Meeting End Date: 09/19/2014 |
|
Recording SEMI Standards Staff: Kris Shen |
CER Posted to Web: 09/23/2014 |
Leadership Changes
Group | Previous Leader | New Leader |
Sapphire Single Crystal Ingot Task Force (new) | | Hongbo Zuo – AURORA |
GaN based LED Epitaxial Wafer Task Force (new) | | Donghai Wu – THTF |
Committee Structure Changes
None.
Ballot Results
None.
Ratification Ballot Results
None.
Activities Approved by the GCS between meetings of TC Chapter meeting
None.
Authorized Activities
# | Type | SC/TF/WG | Details |
| TFOF | Sapphire Single Crystal Ingot Task Force |
Define the key parameters of LED sapphire ingot, including dimension, orientation of the end face and flat, surface quality, bulk defects, etc.
Formulate the inspection methods of the key parameters for LED sapphire ingot.
Formulate and establish inspection standards of the key parameters for LED sapphire ingot.
|
5775 | SNARF | Sapphire Single Crystal Ingot Task Force | New Standard: Specification for Sapphire Single Crystal Ingot Intended for Use for Manufacturing HB-LED Wafers |
| TFOF | GaN based LED Epitaxial Wafer Task Force | This Task Force is chartered to develop test methods and specifications for GaN based HB-LED epitaxial wafer in order to increase the production efficiency. |
5776 | SNARF | Epitaxial Wafer Task Force | New Standard: Test Method for Detecting Surface Defects of GaN based LED Epitaxial Wafer Used for Manufacturing HB-LED |
Authorized Ballots
None.
SNARF(s) Granted a One-Year Extension
None.
SNARF(s) Cancelled
None.
Standard(s) to receive Inactive Status
None.
Special Announcements of the Committee (Workshops, Programs, etc.)
None.
Next Meeting
April 10th, 2015, Friday, Nanjing, Jiangsu, China
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