SEMI International Standards
Standards Locale: China
Committee: HB-LED
Place of Meeting: #158,Zhongxing Avenue, Nangang District, Harbin
Date of Meeting: 09/19/2014
Meeting End Date: 09/19/2014
Recording SEMI Standards Staff: Kris Shen
CER Posted to Web: 09/23/2014


Leadership Changes

Group
Previous Leader
New Leader
Sapphire Single Crystal Ingot Task Force (new)Hongbo Zuo – AURORA
GaN based LED Epitaxial Wafer Task Force (new)Donghai Wu – THTF


Committee Structure Changes
None.

Ballot Results
None.

Ratification Ballot Results
None.

Activities Approved by the GCS between meetings of TC Chapter meeting
None.

Authorized Activities

#
Type
SC/TF/WG
Details
TFOFSapphire Single Crystal Ingot Task Force
    Define the key parameters of LED sapphire ingot, including dimension, orientation of the end face and flat, surface quality, bulk defects, etc.
    Formulate the inspection methods of the key parameters for LED sapphire ingot.
    Formulate and establish inspection standards of the key parameters for LED sapphire ingot.
5775SNARFSapphire Single Crystal Ingot Task ForceNew Standard: Specification for Sapphire Single Crystal Ingot Intended for Use for Manufacturing HB-LED Wafers
TFOFGaN based LED Epitaxial Wafer Task ForceThis Task Force is chartered to develop test methods and specifications for GaN based HB-LED epitaxial wafer in order to increase the production efficiency.
5776SNARFEpitaxial Wafer Task ForceNew Standard: Test Method for Detecting Surface Defects of GaN based LED Epitaxial Wafer Used for Manufacturing HB-LED


Authorized Ballots
None.

SNARF(s) Granted a One-Year Extension
None.

SNARF(s) Cancelled
None.

Standard(s) to receive Inactive Status
None.

Special Announcements of the Committee (Workshops, Programs, etc.)
None.

Next Meeting
April 10th, 2015, Friday, Nanjing, Jiangsu, China