SEMI International Standards
Standards Locale: Japan |
Committee: Silicon Wafer |
Place of Meeting: SEMI Japan |
Date of Meeting: 04/20/2018 |
Meeting End Date: 04/20/2018 |
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Recording SEMI Standards Staff: Junko Collins |
CER Posted to Web: 04/27/2018 |
Leadership Changes
None.
Committee Structure Changes
None.
Ballot Results
None.
Ratification Ballot Results
None.
Activities Approved by the GCS between meetings of TC Chapter meeting
None.
Authorized Activities
# | Type | SC/TF/WG | Details |
6207 | Revision of SNARF | Int’l AWG | Line Items Revision to SEMI M1-1117. Add Bow 3Point to Shape Decision Tree and add Illustrations of Shape Parameters. |
TBD | SNARF | Int’l AWG | Reapproval of SEMI MF1451-0707 (Reapproved 0512) - Test Method for Measuring Sori on Silicon Wafers by Automated Noncontact Scanning |
TBD | SNARF | Int’l Epi | Reapproval of SEMI M61-0612 SPECIFICATION FOR SILICON EPITAXIAL WAFERS WITH BURIED LAYERS |
Note 1: SNARFs and TFOFs are available for review on the SEMI Web site at:
http://downloads.semi.org/web/wstdsbal.nsf/TFOFSNARF
Authorized Ballots
# | When | TF | Details |
6207 | Cycle5, 2018 | Int’l AWG | Line Items Revision to SEMI M1-1117. Add Bow 3Point to Shape Decision Tree and add Illustrations of Shape Parameters. |
TBD | Cycle 5, 2018 | Int’l AWG | Reapproval of SEMI MF1451-0707 (Reapproved 0512) - Test Method for Measuring Sori on Silicon Wafers by Automated Noncontact Scanning |
TBD | Cycle 5, 2018 | Int’l Epi | Reapproval of SEMI M61-0612 SPECIFICATION FOR SILICON EPITAXIAL WAFERS WITH BURIED LAYERS |
5774A | Cycle 5, 2018 | Int’l Test Method | NEW STANDARD: Practice for Sample Preparation Methods for Measuring Minority Carrier Diffusion Length in Silicon Wafers by Surface Photovoltage Methods |
SNARF(s) Granted a One-Year Extension
# | TF | Title | Expiration Date |
5737 | Test Method | Revision of SEMI MF1391-1107, Test Method for Substitutional Atomic Carbon Content of Silicon by Infrared Absorption | 2018/06/15 |
5769 | Test Method | New Standard: Test Method for Nitrogen Content in Silicon by Infrared Absorption | 2018/06/15 |
5770 | Test Method | Test Method for Bulk Micro Defect Density and Denuded Zone Width in Annealed Silicon Wafers | 2018/06/15 |
5772 | Test Method | Revision of MF391-0310: Test Methods for Minority Carrier Diffusion Length in Extrinsic Semiconductors by Measurement of Steady-state Surface photovoltage | 2018/06/15 |
5774 | Test Method | Sample Preparation Method for Minority Carrier Diffusion Length Measurement in Silicon Wafers by Surface Photovoltage Method | 2018/06/15 |
5981 | Test Method | NEW STANDARD: TEST METHOD FOR RECOMBINATION LIFETIME OF THE EPILAYER OF THE SILICON EPITAXIAL WAFER (p/p+, n/n+) BY THE SHORT WAVELENGTH EXCITAION MICROWAVE PHOTOCONDUCTIVE DECAY METHOD | 2018/09/16 |
SNARF(s) Cancelled
None.
Standard(s) to receive Inactive Status
None.
Special Announcements of the Committee (Workshops, Programs, etc.)
Revision to M56 Activity
SNARF was introduced and approved at the TC Chapter, two-weeks review by GTC and approval by GCS are needed for formal approval.
Next Meeting
July 30, 14:00-17:00 at SEMI Japan Meeting Room
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