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SEMI International Standards
Standards Locale: Japan
Committee: Silicon Wafer
Place of Meeting: SEMI Japan
Date of Meeting: 04/20/2018
Meeting End Date: 04/20/2018
Recording SEMI Standards Staff: Junko Collins
CER Posted to Web: 04/27/2018


Leadership Changes
None.

Committee Structure Changes
None.

Ballot Results
None.

Ratification Ballot Results
None.

Activities Approved by the GCS between meetings of TC Chapter meeting
None.

Authorized Activities


#
Type
SC/TF/WG
Details
6207Revision of SNARFInt’l AWGLine Items Revision to SEMI M1-1117. Add Bow 3Point to Shape Decision Tree and add Illustrations of Shape Parameters.
TBDSNARFInt’l AWGReapproval of SEMI MF1451-0707 (Reapproved 0512) - Test Method for Measuring Sori on Silicon Wafers by Automated Noncontact Scanning
TBDSNARF Int’l EpiReapproval of SEMI M61-0612 SPECIFICATION FOR SILICON EPITAXIAL WAFERS WITH BURIED LAYERS
Note 1: SNARFs and TFOFs are available for review on the SEMI Web site at:

http://downloads.semi.org/web/wstdsbal.nsf/TFOFSNARF


Authorized Ballots


#
When
TF
Details
6207Cycle5, 2018Int’l AWGLine Items Revision to SEMI M1-1117. Add Bow 3Point to Shape Decision Tree and add Illustrations of Shape Parameters.
TBDCycle 5, 2018Int’l AWGReapproval of SEMI MF1451-0707 (Reapproved 0512) - Test Method for Measuring Sori on Silicon Wafers by Automated Noncontact Scanning
TBD Cycle 5, 2018Int’l EpiReapproval of SEMI M61-0612 SPECIFICATION FOR SILICON EPITAXIAL WAFERS WITH BURIED LAYERS
5774ACycle 5, 2018Int’l Test MethodNEW STANDARD: Practice for Sample Preparation Methods for Measuring Minority Carrier Diffusion Length in Silicon Wafers by Surface Photovoltage Methods



SNARF(s) Granted a One-Year Extension


#
TF
Title
Expiration Date
5737Test MethodRevision of SEMI MF1391-1107, Test Method for Substitutional Atomic Carbon Content of Silicon by Infrared Absorption2018/06/15
5769Test MethodNew Standard: Test Method for Nitrogen Content in Silicon by Infrared Absorption2018/06/15
5770Test MethodTest Method for Bulk Micro Defect Density and Denuded Zone Width in Annealed Silicon Wafers2018/06/15
5772Test MethodRevision of MF391-0310: Test Methods for Minority Carrier Diffusion Length in Extrinsic Semiconductors by Measurement of Steady-state Surface photovoltage2018/06/15
5774Test MethodSample Preparation Method for Minority Carrier Diffusion Length Measurement in Silicon Wafers by Surface Photovoltage Method2018/06/15
5981Test MethodNEW STANDARD: TEST METHOD FOR RECOMBINATION LIFETIME OF THE EPILAYER OF THE SILICON EPITAXIAL WAFER (p/p+, n/n+) BY THE SHORT WAVELENGTH EXCITAION MICROWAVE PHOTOCONDUCTIVE DECAY METHOD2018/09/16



SNARF(s) Cancelled
None.

Standard(s) to receive Inactive Status
None.

Special Announcements of the Committee (Workshops, Programs, etc.)

Revision to M56 Activity
SNARF was introduced and approved at the TC Chapter, two-weeks review by GTC and approval by GCS are needed for formal approval.


Next Meeting
July 30, 14:00-17:00 at SEMI Japan Meeting Room











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