SEMI International Standards
Standards Locale: North America
Committee: Silicon Wafer
Place of Meeting: San Francisco Marriott Marquis, California
Date of Meeting: 07/12/2016
Meeting End Date: 07/12/2016
Recording SEMI Standards Staff: Kevin Nguyen
CER Posted to Web: 07/19/2016


Leadership Changes

Group
Previous Leader
New Leader
Int'l SOI Task ForceBich-Yen Nguyen (SOITEC)Gerd Pfeiffer (GlobalFoundries)
Silicon Wafer NA TC ChapterMurray Bullis (Materials & Metrology) stepped down from the technical editor position.
Int'l Polished Wafer Task ForceMike Goldstein stepped down.
Committee Structure Changes
None.

Ballot Results

Document #
Document Title
Committee Action
A&R Forms for Approved Ballots
5744A Line Item Revision to SEMI M49-0613 - Guide for Specifying Geometry Measurement Systems for Silicon Wafers for the 130 nm to 16 nm Technology Generations
Line Item 1 - To clarify and better define exclusion windows)Passed as balloted5744A Procedural Review.pdf5744A Procedural Review.pdf
5737ARevision of SEMI MF1391-1107, Test Method for Substitutional Atomic Carbon Content of Silicon by Infrared AbsorptionFailed and returned to TF for rework and reballot5737A Procedural Review.pdf5737A Procedural Review.pdf
5989Revision of SEMI M62-0515, Specifications for Silicon Epitaxial WafersPassed superclean5989 Procedural Review.pdf5989 Procedural Review.pdf
5990Revision of SEMI MF1811-0116 Guide For Estimating The Power Spectral Density Function And Related Finish Parameters From Surface Profile DataPassed superclean5990 Procedural Review.pdf5990 Procedural Review.pdf
5994Line Item Revision to SEMI M50, Test Methods for Determining Capture Rate and False Count Rate for Surface Scanning Inspection Systems by the Overlay Method 5994 Procedural Review.pdf5994 Procedural Review.pdf
Line Item 1 - Fix title for conformancePassed superclean
5993Line Item Revision of SEMI M1-0416, Specification for Polished Single Crystal Silicon Wafers5993 Procedural Review.pdf5993 Procedural Review.pdf
Line Item 1 - Clarify the heading and intent of section 7Passed superclean
6019Line item Revision of SEMI M1-0416, Specification for Polished Single Crystal Silicon Wafers6019 Procedural Review.pdf6019 Procedural Review.pdf
Line Item 1 -Correct and update Figure 3.Passed superclean
Line Item 2 -Remove redundant notes from the caption of Figure 7, and delete the term “outer” before “FQA boundary.”Passed as balloted
Line Item 3 -Point out in śR3-4.4 that minority carrier lifetime measurements in electronic silicon manufacture must be controlled by recombination at impurities.Failed and returned to TF for rework and reballot
Line Item 4 -Add “and bow” to Note 13.Passed as balloted
Line Item 5 -Add “and 450” to śR3-9.5 and correct the reference to śR3-9.4.Passed as balloted


Ratification Ballot Results
None.

Activities Approved by the GCS between meetings of TC Chapter meeting
None.

Authorized Activities

#
Type
SC/TF/WG
Details
5915SNARFInt'l Advanced Wafer Geometry TFLine Item Revision to SEMI M1-0215, Addition to Related Information : Illustration of Flatness and Shape Metrics for Silicon Wafers
(SNARF was revised)
6041SNARFInt'l Advanced Wafer Geometry TFLine Item Revision to M21-1110 Guide For Assigning Addresses To Rectangular Elements In A Cartesian Array
6042SNARFInt'l Test Methods TFLine Item Revision to SEMI MF1763-0706 (Reapproved 1111)Test Methods for Measuring Contrast of a Linear Polarizer
(Title correction for conformance)
6043SNARFInt'l Test Methods TFLine Item Revision to SEMI MF28-0707 (Reapproved 0912) Test Methods for Minority Carrier Lifetime in Bulk Germanium and Silicon by Measurement of Photoconductivity Decay
(Title correction for conformance)
6044SNARFInt'l Test Methods TFLine Item Revision to SEMI MF673-1014 Test Methods For Measuring Resistivity Of Semiconductor Wafers Or Sheet Resistance Of Semiconductor Films With A Noncontact Eddy-current Gauge
(Title correction for conformance)
6045SNARFInt'l Test Methods TFLine Item Revision to SEMI MF928-1014 Test Methods For Edge Contour Of Circular Semiconductor Wafers And Rigid Disk Substrates
(Title correction for conformance)
6046SNARFInt'l Test Methods TFLine Item Revision to SEMI MF1982-0714 Test Methods For Analyzing Organic Contaminants On Silicon Wafer Surfaces By Thermal Desorption Gas Chromatography
(Title correction for conformance)
6047SNARFInt'l Test Methods TFReapproval of SEMI MF728-1106 (Reapproved 1111) Practice for Preparing an Optical Microscope for Dimensional Measurements
6048SNARFInt'l Test Methods TFReapproval of SEMI MF978-1106 (Reapproved 1111)Test Method for Characterizing Semiconductor Deep Levels by Transient Capacitance Techniques


Authorized Ballots

#
When
SC/TF/WG
Details
5995Cycle 6-15Int'l Automated Advance Surface Inspection TLine Item Revision of SEMI MF1048-1111 TEST METHOD FOR MEASURING REFLECTIVE TOTAL INTEGRATED SCATTER
6042Cycle 6-15Int'l Test Methods TFLine Item Revision to SEMI MF1763-0706 (Reapproved 1111)Test Methods for Measuring Contrast of a Linear Polarizer
(Title correction for conformance)
6043Cycle 6-15Int'l Test Methods TFLine Item Revision to SEMI MF28-0707 (Reapproved 0912) Test Methods for Minority Carrier Lifetime in Bulk Germanium and Silicon by Measurement of Photoconductivity Decay
(Title correction for conformance)
6044Cycle 6-15Int'l Test Methods TFLine Item Revision to SEMI MF673-1014 Test Methods For Measuring Resistivity Of Semiconductor Wafers Or Sheet Resistance Of Semiconductor Films With A Noncontact Eddy-current Gauge
(Title correction for conformance)
6045Cycle 6-15Int'l Test Methods TFLine Item Revision to SEMI MF928-1014 Test Methods For Edge Contour Of Circular Semiconductor Wafers And Rigid Disk Substrates
(Title correction for conformance)
6046Cycle 6-15Int'l Test Methods TFLine Item Revision to SEMI MF1982-0714 Test Methods For Analyzing Organic Contaminants On Silicon Wafer Surfaces By Thermal Desorption Gas Chromatography
(Title correction for conformance)
6047Cycle 6-15Int'l Test Methods TFReapproval of SEMI MF728-1106 (Reapproved 1111) Practice for Preparing an Optical Microscope for Dimensional Measurements
6048Cycle 6-15Int'l Test Methods TFReapproval of SEMI MF978-1106 (Reapproved 1111)Test Method for Characterizing Semiconductor Deep Levels by Transient Capacitance Techniques


SNARF(s) Granted a One-Year Extension
None.

SNARF(s) Cancelled
None.

Standard(s) to receive Inactive Status
None.

Special Announcements of the Committee (Workshops, Programs, etc.)
None.

Next Meeting
April 4, 2017 (9AM-12 PM PDT) San Jose, California in conjunction with the NA Spring Standards meetings. Check www.semi.org/en/standards for details