SEMI International Standards
Standards Locale: North America |
Committee: Silicon Wafer |
Place of Meeting: Intel, Santa Clara, CA |
Date of Meeting: 11/04/2014 |
Meeting End Date: 11/04/2014 |
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Recording SEMI Standards Staff: Kevin Nguyen |
CER Posted to Web: 11/06/2014 |
Leadership Changes
Group | Previous Leader | New Leader |
Int'l Polished Wafer TF | Murray Bullis (Materials & Metrology) | TBD |
Committee Structure Changes
None.
Ballot Results
None.
Ratification Ballot Results
None.
Activities Approved by the GCS between meetings of TC Chapter meeting
None.
Authorized Activities
# | Type | SC/TF/WG | Details |
5540 | SNARF | Int'l AWG TF | The SNARF was modified to Line Item Revision to SEMI M1-1013, Specification for Polished Single Crystal Silicon Wafers (Addition to Appendices 1 and 3: Illustration of Flatness and Shape Metrics for Silicon Wafers) |
5705 | SNARF | Int'l AWG TF | The SNARF was modified from Reapproval to Revision of SEMI M67-1109 Practice for Determining Wafer Near-Edge Geometry from a Measured Thickness Data Array Using the ESFQR, ESFQD, and ESBIR Metrics with Title Change to Test Method |
5706 | SNARF | Int'l AWG TF | The SNARF was modified from Reapproval to Revision of SEMI M70-1109 Practice for Determining Wafer-Near-Edge Geometry Using Partial Wafer Site Flatness with Title Change to Test Method |
5806 | SNARF | Int'l AWG TF | Revision of SEMI M68-1214, Practice for Determining Wafer Near-Edge Geometry from a Measured Thickness Data Array Using using a curvature metric, ZDD with Title Change to Test Method |
5807 | SNARF | Int'l AWG TF | Revision for SEMI M77 -1110 PRACTICE FOR DETERMINING WAFER NEAR-EDGE GEOMETRY USING ROLL-OFF AMOUNT. ROA with change of title from PRACTICE to TEST METHOD. |
5746 | SNARF | Int'l AASI TF | The SNARF was revised from Reapproval to Line Item Revision of SEMI ME1392-1109, Guide for Angle ResolvedOptical Scatter Measurements on Specular or Diffuse Surfaces |
5804 | SNARF | Int'l AASI TF | Line Item Revision of SEMI M53-0310, Practice for Calibrating Scanning Surface Inspection Systems Using Certified Depositions of Monodisperse Reference Spheres on Unpatterned Semiconductor Wafer Surfaces |
5805 | SNARF | Int'l AASI TF | Line Item Revision of SEMI M50-0310, Test Method for Determining Capture Rate and False Count Rate for Surface Scanning Inspection Systems by the Overlay Method |
Authorized Ballots
# | When | SC/TF/WG | Details |
5313C | Cycle 1-2015 | Int'l Test Methods TF | Revision of SEMI MF1535-0707 Test Method for Carrier Recombination Lifetime in Silicon Wafers by Noncontact Measurement of Photoconductivity Decay by Microwave Reflectance |
SNARF(s) Granted a One-Year Extension
None.
SNARF(s) Cancelled
None.
Standard(s) to receive Inactive Status
None.
Special Announcements of the Committee (Workshops, Programs, etc.)
None.
Next Meeting
NA Spring meeting, March 31, 2015, San Jose, CA. Check www.semi.org/standards for latest information. See attached for tentative schedule.
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