SEMI International Standards
Standards Locale: North America
Committee: Compound Semiconductor Materials
Place of Meeting: Hyatt Regency Scottsdale Resort and Spa at Gainey Ranch in Scottsdale, Arizona
Date of Meeting: 05/20/2015
Meeting End Date: 05/20/2015
Recording SEMI Standards Staff: Paul Trio
CER Posted to Web: 05/29/2015


Leadership Changes
None.

Committee Structure Changes
None.

Ballot Results
Passed ballots and line items will be submitted to the ISC Audit & Review Subcommittee for procedural review.
Failed ballots and line items were returned to the originating task forces for re-work and re-balloting.
Document #
Document Title
Committee Action
A&R Forms for Approved Ballots
4979ANew Standard: Specification for Polished Monocrystalline C-Plane Gallium Nitride WafersPassed with editorial changes4979AProceduralReview.docx4979AProceduralReview.docx


Ratification Ballot Results
None.

Activities Approved by the GCS between meetings of TC Chapter meeting
None.

Authorized Activities
Listing of all new TFOFs, SNARFs, and other activities approved by the committee.
#
Type
SC/TF/WG
Details
5886
SNARFNA CSM 5-Year Review TFLine Item Revisions to:
    · SEMI M9-0914, Specifications for Polished Monocrystalline Gallium Arsenide Wafers with title change to: Specification for Polished Monocrystalline Gallium Arsenide Wafers
    · SEMI M9.1-0813, Standard for Round 50.8 mm Polished Monocrystalline Gallium Arsenide Wafers for Electronic Device Applications with title change to: Specification for Round 50.8 mm Polished Monocrystalline Gallium Arsenide Wafers for Electronic Device Applications
    · SEMI M9.2-0813, Standard for Round 76.2 mm Polished Monocrystalline Gallium Arsenide Wafers for Electronic Device Applications with title change to: Specification for Round 76.2 mm Polished Monocrystalline Gallium Arsenide Wafers for Electronic Device Applications
    · SEMI M9.5-0813, Standard for Round 100 mm Polished Monocrystalline Gallium Arsenide Wafers for Electronic Device Applications with title change to: Specification for Round 100 mm Polished Monocrystalline Gallium Arsenide Wafers for Electronic Device Applications
    · SEMI M9.6-0813, Standard for Round 125 mm Diameter Polished Monocrystalline Gallium Arsenide Wafers with title change to: Specification for Round 125 mm Diameter Polished Monocrystalline Gallium Arsenide Wafers
Correct nonconforming titles per Procedure Manual, Appendix 4
5884
SNARFNA CSM 5-Year Review TFLine Item Revision to SEMI M65-0306E2, Specifications for Sapphire Substrates to use for Compound Semiconductor Epitaxial Wafers with title change to: Specification for Sapphire Substrates to use for Compound Semiconductor Epitaxial Wafers
Correct nonconforming title per Procedure Manual, Appendix 4
5885
SNARFNA CSM 5-Year Review TFLine Item Revision to SEMI M75-0812, Specifications for Polished Monocrystalline Gallium Antimonide Wafers with title change to: Specification for Polished Monocrystalline Gallium Antimonide Wafers
Correct nonconforming title per Procedure Manual, Appendix 4
5882
SNARFNA CSM 5-Year Review TFLine Item Revision to SEMI M10-1296, Standard Nomenclature for Identification of Structures and Features Seen on Gallium Arsenide Wafers with title change to: Nomenclature for Identification of Structures and Features Seen on Gallium Arsenide Wafers
Correct nonconforming title per Procedure Manual, Appendix 4
5887
SNARFNA CSM 5-Year Review TFRevision to SEMI M63-0306, Guideline: Test Method for Measuring the Al Fraction in AlGaAs on GaAs Substrates by High Resolution X-Ray Diffraction with title change to: Test Method for Measuring the Al Fraction in AlGaAs on GaAs Substrates by High Resolution X-Ray Diffraction
Major revision to correct nonconforming title per Procedure Manual, Appendix 4
5883
SNARFNA CSM 5-Year Review TFLine Item Revision to SEMI M42-0211, Specification for Compound Semiconductor Epitaxial Wafers
Move DIN standard reference from Referenced Standards and Documents section to a new Related Documents section.
NOTE: SNARFs and TFOFs are available for review on the SEMI Web site at:
http://downloads.semi.org/web/wstdsbal.nsf/TFOFSNARF


Authorized Ballots
Listing of documents approved by the committee for letter ballot.
#
When
SC/TF/WG
Details
5886
Cycle 1 or 2, 2016NA CSM 5-Year Review TFLine Item Revisions to:
    · SEMI M9-0914, Specifications for Polished Monocrystalline Gallium Arsenide Wafers with title change to: Specification for Polished Monocrystalline Gallium Arsenide Wafers
    · SEMI M9.1-0813, Standard for Round 50.8 mm Polished Monocrystalline Gallium Arsenide Wafers for Electronic Device Applications with title change to: Specification for Round 50.8 mm Polished Monocrystalline Gallium Arsenide Wafers for Electronic Device Applications
    · SEMI M9.2-0813, Standard for Round 76.2 mm Polished Monocrystalline Gallium Arsenide Wafers for Electronic Device Applications with title change to: Specification for Round 76.2 mm Polished Monocrystalline Gallium Arsenide Wafers for Electronic Device Applications
    · SEMI M9.5-0813, Standard for Round 100 mm Polished Monocrystalline Gallium Arsenide Wafers for Electronic Device Applications with title change to: Specification for Round 100 mm Polished Monocrystalline Gallium Arsenide Wafers for Electronic Device Applications
    · SEMI M9.6-0813, Standard for Round 125 mm Diameter Polished Monocrystalline Gallium Arsenide Wafers with title change to: Specification for Round 125 mm Diameter Polished Monocrystalline Gallium Arsenide Wafers
Correct nonconforming titles per Procedure Manual, Appendix 4
5884
Cycle 1 or 2, 2016NA CSM 5-Year Review TFLine Item Revision to SEMI M65-0306E2, Specifications for Sapphire Substrates to use for Compound Semiconductor Epitaxial Wafers with title change to: Specification for Sapphire Substrates to use for Compound Semiconductor Epitaxial Wafers
Correct nonconforming title per Procedure Manual, Appendix 4
5885
Cycle 1 or 2, 2016NA CSM 5-Year Review TFLine Item Revision to SEMI M75-0812, Specifications for Polished Monocrystalline Gallium Antimonide Wafers with title change to: Specification for Polished Monocrystalline Gallium Antimonide Wafers
Correct nonconforming title per Procedure Manual, Appendix 4
5882
Cycle 1 or 2, 2016NA CSM 5-Year Review TFLine Item Revision to SEMI M10-1296, Standard Nomenclature for Identification of Structures and Features Seen on Gallium Arsenide Wafers with title change to: Nomenclature for Identification of Structures and Features Seen on Gallium Arsenide Wafers
Correct nonconforming title per Procedure Manual, Appendix 4
5887
Cycle 1 or 2, 2016NA CSM 5-Year Review TFRevision to SEMI M63-0306, Guideline: Test Method for Measuring the Al Fraction in AlGaAs on GaAs Substrates by High Resolution X-Ray Diffraction with title change to: Test Method for Measuring the Al Fraction in AlGaAs on GaAs Substrates by High Resolution X-Ray Diffraction
Major revision to correct nonconforming title per Procedure Manual, Appendix 4
5883
Cycle 1 or 2, 2016NA CSM 5-Year Review TFLine Item Revision to SEMI M42-0211, Specification for Compound Semiconductor Epitaxial Wafers
Move DIN standard reference from Referenced Standards and Documents section to a new Related Documents section.


SNARF(s) Granted a One-Year Extension
None.

SNARF(s) Cancelled
None.

Standard(s) to receive Inactive Status
None.

Special Announcements of the Committee (Workshops, Programs, etc.)
Silicon Carbide TF SNARF # 5220 Discontinued
At the North America Compound Semiconductor Materials TC Chapter meeting, held May 20 in conjunction with the CS MANTECH 2015 conference, the following activity under the Silicon Carbide Task Force was discontinued:
- New Standard: Test Method for Measuring Vanadium Concentration in Silicon Carbide by Secondary Ion Mass Spectrometry [SNARF # 5220]

Next Meeting
The next North America CSM TC Chapter meeting will be held on May 18 in conjunction with CS MANTECH 2016 (May 16-19) in Miami, Florida.

For more information, please visit: http://www.semi.org/standards