SEMI International Standards
Standards Locale: North America |
Committee: Compound Semiconductor Materials |
Place of Meeting: Hyatt Regency Scottsdale Resort and Spa at Gainey Ranch in Scottsdale, Arizona |
Date of Meeting: 05/20/2015 |
Meeting End Date: 05/20/2015 |
|
Recording SEMI Standards Staff: Paul Trio |
CER Posted to Web: 05/29/2015 |
Leadership Changes
None.
Committee Structure Changes
None.
Ballot Results
Passed ballots and line items will be submitted to the ISC Audit & Review Subcommittee for procedural review.
Failed ballots and line items were returned to the originating task forces for re-work and re-balloting.
Document # | Document Title | Committee Action | A&R Forms for Approved Ballots |
4979A | New Standard: Specification for Polished Monocrystalline C-Plane Gallium Nitride Wafers | Passed with editorial changes | 4979AProceduralReview.docx |
Ratification Ballot Results
None.
Activities Approved by the GCS between meetings of TC Chapter meeting
None.
Authorized Activities
Listing of all new TFOFs, SNARFs, and other activities approved by the committee.
# | Type | SC/TF/WG | Details |
5886 | SNARF | NA CSM 5-Year Review TF | Line Item Revisions to:
· SEMI M9-0914, Specifications for Polished Monocrystalline Gallium Arsenide Wafers with title change to: Specification for Polished Monocrystalline Gallium Arsenide Wafers
· SEMI M9.1-0813, Standard for Round 50.8 mm Polished Monocrystalline Gallium Arsenide Wafers for Electronic Device Applications with title change to: Specification for Round 50.8 mm Polished Monocrystalline Gallium Arsenide Wafers for Electronic Device Applications
· SEMI M9.2-0813, Standard for Round 76.2 mm Polished Monocrystalline Gallium Arsenide Wafers for Electronic Device Applications with title change to: Specification for Round 76.2 mm Polished Monocrystalline Gallium Arsenide Wafers for Electronic Device Applications
· SEMI M9.5-0813, Standard for Round 100 mm Polished Monocrystalline Gallium Arsenide Wafers for Electronic Device Applications with title change to: Specification for Round 100 mm Polished Monocrystalline Gallium Arsenide Wafers for Electronic Device Applications
· SEMI M9.6-0813, Standard for Round 125 mm Diameter Polished Monocrystalline Gallium Arsenide Wafers with title change to: Specification for Round 125 mm Diameter Polished Monocrystalline Gallium Arsenide Wafers
Correct nonconforming titles per Procedure Manual, Appendix 4 |
5884 | SNARF | NA CSM 5-Year Review TF | Line Item Revision to SEMI M65-0306E2, Specifications for Sapphire Substrates to use for Compound Semiconductor Epitaxial Wafers with title change to: Specification for Sapphire Substrates to use for Compound Semiconductor Epitaxial Wafers
Correct nonconforming title per Procedure Manual, Appendix 4 |
5885 | SNARF | NA CSM 5-Year Review TF | Line Item Revision to SEMI M75-0812, Specifications for Polished Monocrystalline Gallium Antimonide Wafers with title change to: Specification for Polished Monocrystalline Gallium Antimonide Wafers
Correct nonconforming title per Procedure Manual, Appendix 4 |
5882 | SNARF | NA CSM 5-Year Review TF | Line Item Revision to SEMI M10-1296, Standard Nomenclature for Identification of Structures and Features Seen on Gallium Arsenide Wafers with title change to: Nomenclature for Identification of Structures and Features Seen on Gallium Arsenide Wafers
Correct nonconforming title per Procedure Manual, Appendix 4 |
5887 | SNARF | NA CSM 5-Year Review TF | Revision to SEMI M63-0306, Guideline: Test Method for Measuring the Al Fraction in AlGaAs on GaAs Substrates by High Resolution X-Ray Diffraction with title change to: Test Method for Measuring the Al Fraction in AlGaAs on GaAs Substrates by High Resolution X-Ray Diffraction
Major revision to correct nonconforming title per Procedure Manual, Appendix 4 |
5883 | SNARF | NA CSM 5-Year Review TF | Line Item Revision to SEMI M42-0211, Specification for Compound Semiconductor Epitaxial Wafers
Move DIN standard reference from Referenced Standards and Documents section to a new Related Documents section. |
NOTE: SNARFs and TFOFs are available for review on the SEMI Web site at:
http://downloads.semi.org/web/wstdsbal.nsf/TFOFSNARF
Authorized Ballots
Listing of documents approved by the committee for letter ballot.
# | When | SC/TF/WG | Details |
5886 | Cycle 1 or 2, 2016 | NA CSM 5-Year Review TF | Line Item Revisions to:
· SEMI M9-0914, Specifications for Polished Monocrystalline Gallium Arsenide Wafers with title change to: Specification for Polished Monocrystalline Gallium Arsenide Wafers
· SEMI M9.1-0813, Standard for Round 50.8 mm Polished Monocrystalline Gallium Arsenide Wafers for Electronic Device Applications with title change to: Specification for Round 50.8 mm Polished Monocrystalline Gallium Arsenide Wafers for Electronic Device Applications
· SEMI M9.2-0813, Standard for Round 76.2 mm Polished Monocrystalline Gallium Arsenide Wafers for Electronic Device Applications with title change to: Specification for Round 76.2 mm Polished Monocrystalline Gallium Arsenide Wafers for Electronic Device Applications
· SEMI M9.5-0813, Standard for Round 100 mm Polished Monocrystalline Gallium Arsenide Wafers for Electronic Device Applications with title change to: Specification for Round 100 mm Polished Monocrystalline Gallium Arsenide Wafers for Electronic Device Applications
· SEMI M9.6-0813, Standard for Round 125 mm Diameter Polished Monocrystalline Gallium Arsenide Wafers with title change to: Specification for Round 125 mm Diameter Polished Monocrystalline Gallium Arsenide Wafers
Correct nonconforming titles per Procedure Manual, Appendix 4 |
5884 | Cycle 1 or 2, 2016 | NA CSM 5-Year Review TF | Line Item Revision to SEMI M65-0306E2, Specifications for Sapphire Substrates to use for Compound Semiconductor Epitaxial Wafers with title change to: Specification for Sapphire Substrates to use for Compound Semiconductor Epitaxial Wafers
Correct nonconforming title per Procedure Manual, Appendix 4 |
5885 | Cycle 1 or 2, 2016 | NA CSM 5-Year Review TF | Line Item Revision to SEMI M75-0812, Specifications for Polished Monocrystalline Gallium Antimonide Wafers with title change to: Specification for Polished Monocrystalline Gallium Antimonide Wafers
Correct nonconforming title per Procedure Manual, Appendix 4 |
5882 | Cycle 1 or 2, 2016 | NA CSM 5-Year Review TF | Line Item Revision to SEMI M10-1296, Standard Nomenclature for Identification of Structures and Features Seen on Gallium Arsenide Wafers with title change to: Nomenclature for Identification of Structures and Features Seen on Gallium Arsenide Wafers
Correct nonconforming title per Procedure Manual, Appendix 4 |
5887 | Cycle 1 or 2, 2016 | NA CSM 5-Year Review TF | Revision to SEMI M63-0306, Guideline: Test Method for Measuring the Al Fraction in AlGaAs on GaAs Substrates by High Resolution X-Ray Diffraction with title change to: Test Method for Measuring the Al Fraction in AlGaAs on GaAs Substrates by High Resolution X-Ray Diffraction
Major revision to correct nonconforming title per Procedure Manual, Appendix 4 |
5883 | Cycle 1 or 2, 2016 | NA CSM 5-Year Review TF | Line Item Revision to SEMI M42-0211, Specification for Compound Semiconductor Epitaxial Wafers
Move DIN standard reference from Referenced Standards and Documents section to a new Related Documents section. |
SNARF(s) Granted a One-Year Extension
None.
SNARF(s) Cancelled
None.
Standard(s) to receive Inactive Status
None.
Special Announcements of the Committee (Workshops, Programs, etc.)
Silicon Carbide TF SNARF # 5220 Discontinued
At the North America Compound Semiconductor Materials TC Chapter meeting, held May 20 in conjunction with the CS MANTECH 2015 conference, the following activity under the Silicon Carbide Task Force was discontinued:
- New Standard: Test Method for Measuring Vanadium Concentration in Silicon Carbide by Secondary Ion Mass Spectrometry [SNARF # 5220]
Next Meeting
The next North America CSM TC Chapter meeting will be held on May 18 in conjunction with CS MANTECH 2016 (May 16-19) in Miami, Florida.
For more information, please visit: http://www.semi.org/standards
Copyright ©2024 Semiconductor Equipment and Materials International (SEMI®). All rights reserved.
|