SEMI International Standards
| Standards Locale: North America |
| Committee: Silicon Wafer |
| Place of Meeting: San Francisco Marriott Marquis, San Francisco, CA |
| Date of Meeting: 07/11/2017 |
| Meeting End Date: 07/11/2017 |
 |
| Recording SEMI Standards Staff: Kevin Nguyen |
| CER Posted to Web: 07/24/2017 |
Leadership Changes
WG/TF/SC/TC Name | Previous Leader | New Leader |
| Int'l AWG Task Force | Jaydeep Sinha is retired | |
Committee Structure Changes
None.
Ballot Results
Document # | Document Title | Committee Action | A&R Forms for Approved Ballots |
| 5915 | Line Item Revision to SEMI M1-1016: Specification For Polished Single Crystal Silicon Wafers (To add Illustration of Flatness Metrics for Silicon Wafers)
- Line Item 1 - To add figures to newly provided Related Information 4 of M1 to illustrate the flatness metrics for silicon wafers and to add Table A1-1 to Appendix 1 with references for the figures added.
| Passed with technical changes. Ratification Ballot will be issued in cycle 6-17. |  5915 Procedural Review.pdf |
| 6019A | Line Item Revision of SEMI M1-1016, Specification for Polished Single Crystal Silicon Wafers
- Line Item 1 - Change śR3-4.4 as follows to point out that minority carrier lifetime measurements in electronic silicon manufacture must be controlled by recombination at impurities
| Passed as balloted |  6019A Procedural Review.pdf |
| 6041 | Line Item Revision of M21-1110 Guide For Assigning Addresses To Rectangular Elements In A Cartesian Array
- Line Item 1 - Changes to various related sections shown
| Passed with editorial changes |  6041 Procedural Review.pdf |
| 6042A | Line Item Revision to SEMI MF1763-0706 (Reapproved 1111)Test Methods for Measuring Contrast of a Linear Polarizer (Title correction for conformance)
- Line Item 1 - Correct title and concomitant text.
| Passed as balloted |  6042A Procedural Review.pdf |
| 6096 | Line Item Revision to SEMI M53-0216 Practice for Calibrating Scanning Surface Inspection Systems Using Certified Depositions of Monodispere Reference Spheres on Unpatterned Semiconductor Wafer Surfaces
- Line Item 1 - Addition of Related Information 2
| Failed and will be reballoted | |
| 6169 | Line Item Revision to MF1390-1014: Test Method For Measuring Bow And Warp On Silicon Wafer By Automated Noncontact Scanning
- Line Item 1 - Delete Note 3 in section 2.5 and MF657 in section 4.1
- Line Item 2 - Deletion of Note 2 and modification of other sections as shown.
| Both Line Items Passed as balloted |  6169 Procedural Review.pdf |
Ratification Ballot Results
None.
Activities Approved by the GCS between meetings of TC Chapter meeting
None.
Authorized Activities
# | Type | SC/TF/WG | Details |
| SNARF | Int'l AWG TF | Line Item Revision to SEMI M43, Guide for Reporting Wafer Nanotopgraphy |
| SNARF | Int'l AWG TF | Line Item Revision to SEMI M78, Guide for Determining Nanotopography of Unpatterned Silicon Wafers for the 130 nm to 22 nm Generations in High Volume Manufacturing |
| SNARF | Int'l AWG TF | Line Items Revision to SEMI M1-1016, Add Shape metrics of Bow 3p in appendix 2 which was mistakenly removed at previous ballot, and add Illustrations of Shape Metrics for Silicon Wafers in Appendix 2. |
| SNARF | Int'l Polished Wafer TF | Reapproval of SEMI M8-0312 - Specification for Polished Monocrystalline Silicon Test Wafers |
| SNARF | Int'l Polished Wafer TF | Reapproval of SEMI M38-0312 - Specification for Polished Reclaimed Silicon Wafers |
| SNARF | Int'l Test Methods TF | Reapproval of
- SEMI MF84-0312 - Test Method for Measuring Resistivity of Silicon Wafers With an In-Line Four-Point Probe
- SEMI MF95-1107 (Reapproved 1012) - Test Method for Thickness of Lightly Doped Silicon Epitaxial Layers on Heavily Doped Silicon Substrates Using an Infrared Dispersive Spectrophotometer
- SEMI MF950-1107 (Reapproved 0912) - Test Method for Measuring the Depth of Crystal Damage of a Mechanically Worked Silicon Wafer Surface by Angle Polished and Defect Etching
- SEMI MF110-1107 (Reapproved 0912) Test Method for Thickness of Epitaxial or Diffused Layers in Silicon by the Angle Lapping and Staining Technique
- SEMI MF1188-1107 (Reapproved 0912) Test Method for Interstitial Oxygen Content of Silicon by Infrared Absorption With Short Baseline
- SEMI MF1388-0707 (Reapproved 0412) Test Method for Generation Lifetime and Generation Velocity of Silicon Material by Capacitance-Time Measurements of Metal-Oxide-Silicon (MOS) Capacitors
- SEMI MF1392-0307 (Reapproved 0512) Test Method for Determining Net Carrier Density Profiles in Silicon Wafers by Capacitance-Voltage Measurements with a Mercury Probe
- SEMI MF1527-0412 Guide for Application of Certified Reference Materials and Reference Wafers for Calibration and Control of Instruments for Measuring Resistivity of Silicon
- SEMI MF1569-0307 (Reapproved 0512) Guide for Generation of Consensus Reference Materials for Semiconductor Technology
- SEMI MF1617-0304 (Reapproved 0710) Test Method for Measuring Surface Sodium, Aluminum, Potassium, and Iron on Silicon and EPI Substrates by Secondary Ion Mass Spectrometry
- SEMI MF1619-1107 (Reapproved 0912) Test Method for Measurement of Interstitial Oxygen Content of Silicon Wafers by Infrared Absorption Spectroscopy with p-Polarized Radiation Incident at the Brewster Angle
- SEMI MF1630-1107 (Reapproved 0912) Test Method for Low Temperature FT-IR Analysis of Single Crystal Silicon for III-V Impurities
- SEMI MF2074-0912 Guide for Measuring Diameter of Silicon and Other Semiconductor Wafers
- SEMI MF374-0312 Test Method for Sheet Resistance of Silicon Epitaxial, Diffused, Polysilicon, and Ion-implanted Layers Using an In-Line Four-Point Probe with the Single-Configuration Procedure
- SEMI MF397-0812 Test Method for Resistivity of Silicon Bars Using a Two-Point Probe
- SEMI MF523-1107 (Reapproved 1012) Practice for Unaided Visual Inspection of Polished Silicon Wafer Surfaces
- SEMI MF525-0312 Test Method for Measuring Resistivity of Silicon Wafers Using a Spreading Resistance Probe
- SEMI MF576-0812 Test Method for Measurement of Insulator Thickness and Refractive Index on Silicon Substrates by Ellipsometry
- SEMI MF657-0707E Test Method for Measuring Warp and Total Thickness Variation on Silicon Wafers by Noncontact Scanning
- SEMI MF671-0312 Test Method for Measuring Flat Length on Wafers of Silicon and Other Electronic Materials
- SEMI MF674-0705 (Reapproved 0611) Practices for Preparing Silicon for Spreading Resistance Measurements
- SEMI M56-0307 (Reapproved 0512) Practice for Determining Cost Components for Metrology Equipment Due to Measurement Variability and Bias
|
Authorized Ballots
# | When | TF | Details |
| 6205 | Cycle 6-17 | Int'l AWG TF | Line Item Revision to SEMI M43, Guide for Reporting Wafer Nanotopgraphy |
| 6206 | Cycle 6-17 | Int'l AWG TF | Line Item Revision to SEMI M78, Guide for Determining Nanotopography of Unpatterned Silicon Wafers for the 130 nm to 22 nm Generations in High Volume Manufacturing |
| 6096A | Cycle 6-17 | Int'l ASI TF | Line Item Revision to SEMI M53-0216 Practice for Calibrating Scanning Surface Inspection Systems Using Certified Depositions of Monodispere Reference Spheres on Unpatterned Semiconductor Wafer Surfaces
- Line Item 1 - Addition of Related Information 2
|
| tbd | Cycle 7-17 | Int'l Polished Wafer TF | Reapproval of SEMI M8-0312 - Specification for Polished Monocrystalline Silicon Test Wafers |
| tbd | Cycle 7-17 | Int'l Polished Wafer TF | Reapproval of SEMI M38-0312 - Specification for Polished Reclaimed Silicon Wafers |
| tbd | Cycle 7-17 | Int'l Test Methods TF | Reapproval of
- SEMI MF84-0312 - Test Method for Measuring Resistivity of Silicon Wafers With an In-Line Four-Point Probe
- SEMI MF95-1107 (Reapproved 1012) - Test Method for Thickness of Lightly Doped Silicon Epitaxial Layers on Heavily Doped Silicon Substrates Using an Infrared Dispersive Spectrophotometer
- SEMI MF950-1107 (Reapproved 0912) - Test Method for Measuring the Depth of Crystal Damage of a Mechanically Worked Silicon Wafer Surface by Angle Polished and Defect Etching
- SEMI MF110-1107 (Reapproved 0912) Test Method for Thickness of Epitaxial or Diffused Layers in Silicon by the Angle Lapping and Staining Technique
- SEMI MF1188-1107 (Reapproved 0912) Test Method for Interstitial Oxygen Content of Silicon by Infrared Absorption With Short Baseline
- SEMI MF1388-0707 (Reapproved 0412) Test Method for Generation Lifetime and Generation Velocity of Silicon Material by Capacitance-Time Measurements of Metal-Oxide-Silicon (MOS) Capacitors
- SEMI MF1392-0307 (Reapproved 0512) Test Method for Determining Net Carrier Density Profiles in Silicon Wafers by Capacitance-Voltage Measurements with a Mercury Probe
- SEMI MF1527-0412 Guide for Application of Certified Reference Materials and Reference Wafers for Calibration and Control of Instruments for Measuring Resistivity of Silicon
- SEMI MF1569-0307 (Reapproved 0512) Guide for Generation of Consensus Reference Materials for Semiconductor Technology
- SEMI MF1619-1107 (Reapproved 0912) Test Method for Measurement of Interstitial Oxygen Content of Silicon Wafers by Infrared Absorption Spectroscopy with p-Polarized Radiation Incident at the Brewster Angle
- SEMI MF1630-1107 (Reapproved 0912) Test Method for Low Temperature FT-IR Analysis of Single Crystal Silicon for III-V Impurities
- SEMI MF2074-0912 Guide for Measuring Diameter of Silicon and Other Semiconductor Wafers
- SEMI MF374-0312 Test Method for Sheet Resistance of Silicon Epitaxial, Diffused, Polysilicon, and Ion-implanted Layers Using an In-Line Four-Point Probe with the Single-Configuration Procedure
- SEMI MF397-0812 Test Method for Resistivity of Silicon Bars Using a Two-Point Probe
- SEMI MF523-1107 (Reapproved 1012) Practice for Unaided Visual Inspection of Polished Silicon Wafer Surfaces
- SEMI MF525-0312 Test Method for Measuring Resistivity of Silicon Wafers Using a Spreading Resistance Probe
- SEMI MF576-0812 Test Method for Measurement of Insulator Thickness and Refractive Index on Silicon Substrates by Ellipsometry
- SEMI MF671-0312 Test Method for Measuring Flat Length on Wafers of Silicon and Other Electronic Materials
- SEMI M56-0307 (Reapproved 0512) - Practice for Determining Cost Components for Metrology Equipment Due to Measurement Variability and Bias
|
SNARF(s) Granted a One-Year Extension
None.
SNARF(s) Cancelled
None.
Standard(s) to receive Inactive Status
SEMI M18-0912 - Guide for Developing Specification Forms for Order Entry of Silicon Wafers
SEMI M32-0307 - (Reapproved 0512) - Guide to Statistical Specifications
Special Announcements of the Committee (Workshops, Programs, etc.)
None.
Next Meeting
April 10, 2018 in conjunction with the NA Spring Standards meetings in Milpitas, California. Please check www.semi.org/standards under calendar for latest update.
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