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SEMI International Standards
Standards Locale: China
Committee: HB-LED
Place of Meeting: SEMI China Office, Room 803, 8 F, 2nd Building, No.1158 Zhangdong Road, Pudong, Shanghai
Date of Meeting: 12/28/2017
Meeting End Date: 12/28/2017
Recording SEMI Standards Staff: Sophia Huang
CER Posted to Web: 01/16/2018


Leadership Changes
None.

Committee Structure Changes
None.

Ballot Results

Document #
Document Title
Committee Action
A&R Forms for Approved Ballots
5723BNew Standard: Specification for Single Crystal Sapphire Intended for Use for Manufacturing HB- LED WafersFailed and return to TF for re-work and reballot in Cycle 2-2018
5775BNew Standard: Specification for Sapphire Single Crystal Ingot Intended for Use for Manufacturing HB-LED WafersFailed and return to TF for re-work and reballot in Cycle 2-2018
5776ANew Standard: Test Method for Detecting Surface Defects of GaN based LED Epitaxial Wafer Used for Manufacturing HB-LEDPassed with technical changes and editorial changes, Ratification Ballot To Be Issued. R5776A Procedure Review.pdf


Ratification Ballot Results
None.

Activities Approved by the GCS between meetings of TC Chapter meeting
None.

Authorized Activities
None.

Authorized Ballots

#
When
TF
Details
R5776ACycle 2-2018GaN based LED Epitaxial Wafer Task Force New Standard: Test Method for Detecting Surface Defects of GaN based LED Epitaxial Wafer Used for Manufacturing HB-LED
5723CCycle 2-2018Single Crystal Sapphire Task Force New Standard: Specification for Single Crystal Sapphire Intended for Use for Manufacturing HB- LED Wafers
5775CCycle 2-2018Sapphire Single Crystal Ingot Task Force New Standard: Specification for Sapphire Single Crystal Ingot Intended for Use for Manufacturing HB-LED Wafers


SNARF(s) Granted a One-Year Extension
None.

SNARF(s) Cancelled
None.

Standard(s) to receive Inactive Status
None.

Special Announcements of the Committee (Workshops, Programs, etc.)
None.

Next Meeting
April 18, 2018, Thursday, Quanzhou, Fujian, China HB-LED Standards Spring Meeting 2018











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