SEMI International Standards
Standards Locale: China
Committee: HB-LED
Place of Meeting: Dongguan,Guangdong
Date of Meeting: 04/26/2023
Meeting End Date:
Recording SEMI Standards Staff: Cassie Li
CER Posted to Web: 05/22/2023


Leadership Changes
None.

Committee Structure Changes
None.

Ballot Results

None.

Ratification Ballot Results
None.

Activities Approved by the GCS between meetings of TC Chapter meeting
None.

Authorized Activities
None.

Authorized Ballots
None.

SNARF(s) Granted a One-Year Extension
None.

SNARF(s) Abolished
None.

Standard(s) to receive Inactive Status

HB-LED
SEMI HB8-0217Test Method for Determining Orientation of a Sapphire Single Crystal
SEMI HB9-0818Test Method and Acceptance Criteria for Visual Inspection of Surface Defects of GaN Epitaxial Wafers Used for Manufacturing HB-LED
SEMI HB10-1018Specification for Single Crystal Sapphire Intended for Use for Manufacturing HB-LED Wafers


Special Announcements of the Committee (Workshops, Programs, etc.)
None.

Next Meeting
The next meeting of the Compound Semiconductor Materials & HB-LED China TC Chapter is scheduled for TBD, 2023, China.