SEMI International Standards
Standards Locale: China |
Committee: HB-LED |
Place of Meeting: ICC, Shanghai, China. |
Date of Meeting: 03/16/2021 |
Meeting End Date: 03/16/2021 |
|
Recording SEMI Standards Staff: Isadora Jin |
CER Posted to Web: 03/25/2021 |
Leadership Changes
WG/TF/SC/TC Name | Previous Leader | New Leader |
Compound Semiconductor Materials |
None | | |
HB-LED |
None | | |
Committee Structure Changes
Previous WG/TF/SC Name | New WG/TF/SC Name or Status Change |
Compound Semiconductor Materials |
None | |
HB-LED |
None | |
Ballot Results
Document # | Document Title | Committee Action | A&R Forms for Approved Ballots |
Compound Semiconductor Materials |
None | | | |
HB-LED |
6589 | Revision to SEMI HB4-0913 (Reapproved 0419) Specification of Communication Interfaces for High Brightness Led Manufacturing Equipment (HB-LED ECI) | Passed with Technical Changes.
Ratification ballot to be issued. | |
Ratification Ballot Results
None.
Activities Approved by the GCS between meetings of TC Chapter meeting
# | Type | SC/TF/WG | Details |
Compound Semiconductor Materials |
| SNARF | SiC Substrate TF | New Standard: Test Method for Micropipe Density of Silicon Carbide Wafer By Laser Reflection |
| SNARF | SiC Substrate TF | New Standard: Test Method for Flatness of Silicon Carbide Wafers by Optical Interference |
| SNARF | SiC Substrate TF | New Standard: Test Method for Residual Stress of Silicon Carbide Wafers by Photoelastic |
HB-LED |
None | | | |
Authorized Activities
# | Type | SC/TF/WG | Details |
Compound Semiconductor Materials |
| SNARF | SiC Substrate TF | New Standard: Test Method for Micropipe Density of Silicon Carbide Wafer By Laser Reflection |
| SNARF | SiC Substrate TF | New Standard: Test Method for Flatness of Silicon Carbide Wafers by Optical Interference |
| SNARF | SiC Substrate TF | New Standard: Test Method for Residual Stress of Silicon Carbide Wafers by Photoelastic |
HB-LED |
None | | | |
Authorized Ballots
# | When | TF | Details |
Compound Semiconductor Materials |
None | | | |
HB-LED |
6371C | Cycle 4-21 or Cycle 5-21 | Patterned Sapphire Substrate TF | New Standard: Test Method for Determining Geometrical Parameters of Patterns on Patterned Sapphire Substrate |
SNARF(s) Granted a One-Year Extension
# | TF | Title | Expiration Date |
Compound Semiconductor Materials |
None | | | |
HB-LED |
6371 | Patterned Sapphire Substrate TF | New Standard: Test Method for Determining Geometrical Parameters of Patterns on Patterned Sapphire Substrate | 2022/04/18 |
SNARF(s) Cancelled
None.
Standard(s) to receive Inactive Status
Standard Designation | Title |
Compound Semiconductor Materials |
None | |
HB-LED |
None | |
Special Announcements of the Committee (Workshops, Programs, etc.)
None.
Next Meeting
TBD, 2021, China.
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