Document # | Document Title | TC Chapter Action | A&R Forms for Approved Ballots |
| 6957, | Line Item Revision of SEMI M52 - Guide for Specifying Scanning Surface Inspection Systems for Silicon Wafers for the 130 nm to 5 nm Technology Generations | Passed as balloted |  |
| 6982, | Revision to SEMI M78-0618 Guide For Determining Nanotopography Of Unpatterned Silicon Wafers For The 130 nm to 22 nm Generations In High Volume Manufacturing | Passed as balloted | |
| 6984, | Line item revision of SEMI M050-1116, Test Method for Determining Capture Rate and False Count Rate for Surface Scanning Inspection Systems by the Overlay Method | Passed as balloted | |
| 6985, | Reapproval of SEMI MF1390, Test Method for Measuring Bow and Warp on Silicon Wafers by Automated Noncontact Scanning | Passed as balloted | |
| 6986, | Reapproval of SEMI M43, Guide for Reporting Wafer Nanotopography | Passed as balloted | |
| 6987, | Reapproval of SEMI M84, Specification for Polished Single Crystal Silicon Wafers for Gallium Nitride-On-Silicon Applications | Passed as balloted | |
| 6988, | Reapproval of SEMI MF1048-0217 Test Method For Measuring Reflective Total Integrated Scatter | Passed as balloted | |
| 6989, | Reapproval of SEMI M40, Guide for Measurement of Roughness of Planar Surfaces on Polished Wafers | Passed as balloted | |
| 6990, | Reapproval of SEMI ME1392, Guide for Angle Resolved Optical Scatter Measurements on Specular or Diffuse Surfaces | Passed as balloted | |
| 7025, | Line Item Revision of SEMI MF1529-1110: Test Method for “Sheet Resistance Uniformity Evaluation by In-Line Four-Point Probe with the Dual-Configuration Procedure” | Passed as balloted | |
| 7029, | Reapproval of SEMI M61-0612 (Reapproved 0319)Specification for Silicon Epitaxial Wafers with Buried Layers | Passed as balloted | |
| 7030, | Reapproval of SEMI MF95-1107 (Reapproved 0718) Test Method for Thickness of Lightly Doped Silicon Epitaxial Layers on Heavily Doped Silicon Substrates Using an Infrared Dispersive Spectrophotometer | Passed as balloted | |
| 7031, | Reapproval of SEMI MF950-1107 (Reapproved 0718) Test Method for Measuring the Depth of Crystal Damage of a Mechanically Worked Silicon Wafer Surface by Angle Polished and Defect Etching | Passed as balloted | |
| 7032, | Reapproval of SEMI MF84-0312 (Reapproved 0718) Test Method for Measuring Resistivity of Silicon Wafers With an In-Line Four-Point Probe | Passed as balloted | |
| 7033, | Reapproval of SEMI MF672-0412 (Reapproved 1018) Guide for Measuring Resistivity Profiles Perpendicular to the Surface of a Silicon Wafer Using a Spreading Resistance Probe | Passed as balloted | |
| 7034, | Reapproval of SEMI MF671-0312 (Reapproved 0718) Test Method for Measuring Flat Length on Wafers of Silicon and Other Electronic Materials | Passed as balloted | |
| 7035, | Reapproval of SEMI MF576-0812 (Reapproved 0718) Test Method for Measurement of Insulator Thickness and Refractive Index on Silicon Substrates by Ellipsometry | Passed as balloted | |
| 7036, | Reapproval of SEMI MF533-0310 (Reapproved 0416) Test Method for Thickness and Thickness Variation of Silicon Wafers | Passed as balloted | |
| 7037, | Reapproval of SEMI MF525-0312 (Reapproved 0718) Test Method for Measuring Resistivity of Silicon Wafers Using a Spreading Resistance Probe | Passed as balloted | |
| 7038, | Reapproval of SEMI MF523-1107 (Reapproved 0718) Practice for Unaided Visual Inspection of Polished Silicon Wafer Surfaces | Passed as balloted | |
| 7039, | Reapproval of SEMI MF397-0812 (Reapproved 0718) Test Method for Resistivity of Silicon Bars Using a Two-Point Probe | Passed as balloted | |
| 7040, | Reapproval of SEMI MF374-0312 (Reapproved 0718) Test Method for Sheet Resistance of Silicon Epitaxial, Diffused, Polysilicon, and Ion-implanted Layers Using an In-Line Four-Point Probe with the Single-Configuration Procedure | Passed as balloted | |
| 7041, | Reapproval of SEMI MF26-0714E Test Method for Determining the Orientation of a Semiconductive Single Crystal | Passed as balloted | |
| 7042, | Reapproval of SEMI MF2074-0912 (Reapproved 0718) Guide for Measuring Diameter of Silicon and Other Semiconductor Wafers | Passed as balloted | |
| 7043, | Reapproval of SEMI MF1982-0317 Test Method for Analyzing Organic Contaminants on Silicon Wafer Surfaces by Thermal Desorption Gas Chromatography | Passed as balloted | |
| 7044, | Reapproval of SEMI MF1763-0318 Test Method for Measuring Contrast of a Linear Polarizer | Passed as balloted | |
| 7045, | Reapproval of SEMI MF1630-1107 (Reapproved 0718) Test Method for Low Temperature FT-IR Analysis of Single Crystal Silicon for III-V Impurities | Passed as balloted | |
| 7046, | Reapproval of SEMI MF1619-1107 (Reapproved 0718) Test Method for Measurement of Interstitial Oxygen Content of Silicon Wafers by Infrared Absorption Spectroscopy with p-Polarized Radiation Incident at the Brewster Angle | Passed as balloted | |
| 6958, | Reapproval of SEMI M21-0318 Guide for Assigning Addresses to Rectangular Elements in a Cartesian Array | Passed as balloted | |
| 6983, | Revision for SEMI M49-0918 With Title Change To: Guide for Specifying Geometry Measurement Systems for Silicon Wafers for the 130 nm To 3 nm technology generations | Failed and returned to TF for rework and reballot | |
| 7072, | Reapproval of SEMI MF1569-0307 (Reapproved 0718) Guide for Generation of Consensus Reference Materials for Semiconductor Technology | Passed as balloted | |
| 7073, | Reapproval of SEMI MF1527-0412 (Reapproved 1018) Guide for Application of Certified Reference Materials and Reference Wafers for Calibration and Control of Instruments for Measuring Resistivity of Silicon | Passed as balloted | |
| 7074, | Reapproval of SEMI MF1392-0307 (Reapproved 0718) Test Method for Determining Net Carrier Density Profiles in Silicon Wafers by Capacitance-Voltage Measurements with a Mercury Probe | Passed as balloted | |
| 7075, | Reapproval of SEMI MF1391-1107 (Reapproved 0912) Test Method for Substitutional Atomic Carbon Content of Silicon by Infrared Absorption | Passed as balloted | |
| 7076, | Reapproval of SEMI MF1388-0707 (Reapproved 0718) Test Method for Generation Lifetime and Generation Velocity of Silicon Material by Capacitance-Time Measurements of Metal-Oxide-Silicon (MOS) Capacitors | Passed as balloted | |
| 7077, | Reapproval of SEMI MF1366-0308 (Reapproved 1018) Test Method for Measuring Oxygen Concentration in Heavily Doped Silicon Substrates by Secondary Ion Mass Spectrometry | Passed as balloted | |
| 7078, | Reapproval of SEMI MF1188-1107 (Reapproved 0718) Test Method for Interstitial Oxygen Content of Silicon by Infrared Absorption With Short Baseline | Passed as balloted | |
| 7079, | Reapproval of SEMI MF110-1107 (Reapproved 0718) Test Method for Thickness of Epitaxial or Diffused Layers in Silicon by the Angle Lapping and Staining Technique | Passed as balloted | |
| 7080, | Reapproval of SEMI MF1049-0308 (Reapproved 1018) Practice for Shallow Etch Pit Detection on Silicon Wafers | Passed as balloted | |
| 7081, | Reapproval of SEMI M8-0312 (Reapproved 0718) Specification for Polished Monocrystalline Silicon Test Wafers | Passed as balloted | |
| 7082, | Reapproval of SEMI M56-1018 Practice for Determining Cost Components for Metrology Equipment Due to Measurement Variability and Bias | Passed as balloted | |
| 7083 | Reapproval of SEMI M38-0312 (Reapproved 0718) Specification for Polished Reclaimed Silicon Wafers | Passed as balloted | |