SEMI International Standards
Standards Locale: China
Committee: Compound Semiconductor Materials
Place of Meeting: Dongguan,Guangdong
Date of Meeting: 04/26/2023
Meeting End Date:
Recording SEMI Standards Staff: Cassie Li
CER Posted to Web: 05/22/2023


Leadership Changes
None.

Committee Structure Changes
None.

Ballot Results

Document #
Document Title
Committee Action
A&R Forms for Approved Ballots
Compound Semiconductor Materials
6768ATest Method for Micropipe Density of Silicon Carbide Wafer by Laser ReflectionFailed
6769ATest Method Qualitative for Residual Stress of Silicon Carbide Wafers by PhotoelasticFailed
HB-LED
None


Ratification Ballot Results
None.

Activities Approved by the GCS between meetings of TC Chapter meeting
None.

Authorized Activities

#
Type
SC/TF/WG
Details
Compound Semiconductor Materials
6769ARevise SNARFSilicon Carbide Substrate Task ForceSNARF Title from: New Standard: Test Method Qualitative for Residual Stress of Silicon Carbide Wafers by Photoelastic
To: New Standard: Test Method for Residual Stress of Silicon Carbide Wafers by Photoelastic
Authorized Ballots
None.

SNARF(s) Granted a One-Year Extension
None.

SNARF(s) Abolished
None.

Standard(s) to receive Inactive Status
None

Special Announcements of the Committee (Workshops, Programs, etc.)
None.

Next Meeting
The next meeting of the Compound Semiconductor Materials & HB-LED China TC Chapter is scheduled for TBD, 2023, China