SEMI International Standards
Standards Locale: Japan
Committee: Silicon Wafer
Place of Meeting: SEMI Japan office, Tokyo, Japan
Date of Meeting: 01/15/2021
Meeting End Date: 01/15/2021
Recording SEMI Standards Staff: Mami Nakajo
CER Posted to Web: 01/25/2021


Leadership Changes

WG/TF/SC/TC Name
Previous Leader
New Leader
Silicon Wafer Japan TCNaoyuki Kawai (Meiji University)Ryuji Takeda (GlobalWafersJapan),
Committee Structure Changes

Previous WG/TF/SC Name
New WG/TF/SC Name or Status Change
International 450 mm Shipping Box TFDisband
Ballot Results

Document #
Document Title
Committee Action
A&R Forms for Approved Ballots
6680Reapproval of SEMI M77-01015, Test Method for Determining Wafer Near-Edge Geometry Using Roll-Off Amount, ROA Passed as balloted6680 Ballot Report_Rev1.pdf6680 Ballot Report_Rev1.pdf
6681Reapproval of SEMI MF1451-0707, Test Method for Measuring SORI on Silicon Wafers by Automated 00
Noncontact Scanning		Passed as balloted6681 Ballot Report_Rev1.pdf6681 Ballot Report_Rev1.pdf
The following ballots reviews are transferred from NA TC Chapter (approved by the GCS)
6363Revision of SEMI M52-0214 With Title Change To: Guide For Specifying Scanning Surface Inspection Systems For Silicon Wafers For The 130 nm To 5 nm Technology Generations Passed with Editorial Change6363 Ballot Report_Rev1.pdf6363 Ballot Report_Rev1.pdf
6613Reapproval of SEMI M20-0215, Practice for Establishing a Wafer Coordinate System Passed as balloted6613 Ballot Report_Rev1.pdf6613 Ballot Report_Rev1.pdf
5981NEW STANDARD: TEST METHOD FOR RECOMBINATION LIFETIME OF THE EPILAYER OF THE SILICON EPITAXIAL WAFER (p/p+, n/n+) BY THE SHORT WAVELENGTH EXCITATION MICROWAVE PHOTOCONDUCTIVE DECAY METHODPassed with Editorial Change5981 Ballot Report_Rev1.pdf5981 Ballot Report_Rev1.pdf
6526BNEW STANDARD: TEST METHOD FOR BULK MICRO DEFECT DENSITY AND DENUDED ZONE WIDTH IN ANNEALED SILICON WAFERS BY OPTICAL MICROSCOPY AFTER PREFERENTIAL ETCHINGPassed as balloted6526B Ballot Report_Rev1.pdf6526B Ballot Report_Rev1.pdf


Ratification Ballot Results
None.

Activities Approved by the GCS between meetings of TC Chapter meeting

#
Type
SC/TF/WG
Details
6363BallotInternational Advanced Surface Inspection TFRevision of SEMI M52-0214 With Title Change To: Guide For Specifying Scanning Surface Inspection Systems For Silicon Wafers For The 130 nm To 5 nm Technology Generations
6613BallotInternational Advanced Wafer Geometry TFReapproval of SEMI M20-0215, Practice for Establishing a Wafer Coordinate System
5981BallotInternational Test Method TFNEW STANDARD: TEST METHOD FOR RECOMBINATION LIFETIME OF THE EPILAYER OF THE SILICON EPITAXIAL WAFER (p/p+, n/n+) BY THE SHORT WAVELENGTH EXCITATION MICROWAVE PHOTOCONDUCTIVE DECAY METHOD
6526BBallotInternational Test Method TFNEW STANDARD: TEST METHOD FOR BULK MICRO DEFECT DENSITY AND DENUDED ZONE WIDTH IN ANNEALED SILICON WAFERS BY OPTICAL MICROSCOPY AFTER PREFERENTIAL ETCHING
No activity requested by the Japan TC Chapter between meetings.
The NA TC Chapter requested for transferring the ballot reviews of 6363,6613,5981 and 6526B at the Japan TC Chapter meeting on Nov. 26 and the GCS approved them.

Authorized Activities

#
Type
SC/TF/WG
Details
6702SNARFJapan Test Method Task ForceRevision of M60: TEST METHOD FOR TIME DEPENDENT DIELECTRIC BREAKDOWN CHARACTERISTICS OF Amorphous SiO2 FILMS FOR Silicon WAFER EVALUATION
.

Authorized Ballots
None.

SNARF(s) Granted a One-Year Extension

#
TF
Title
Expiration Date
5772Japan Test Method Task ForceRevision of MF391-0310: Test Methods for Minority Carrier Diffusion Length in Extrinsic Semiconductors by Measurement of Steady-state Surface photovoltage2021/09/11
SNARF(s) Cancelled
None.

Standard(s) to receive Inactive Status
None.

Special Announcements of the Committee (Workshops, Programs, etc.)
None.

Next Meeting
The next meeting is scheduled for April,23 Friday 13:30-17:00 at SEMI Japan office/WEB.