SEMI International Standards
SEMI New Activity Report Form (SNARF)



Activity Number: 5500
SNARF for: New Standard: Specification for Polished Single Crystal Silicon Wafers for GaN-on-Silicon Applications


Originating Global Technical Committee: Silicon Wafer
Originating Technical Committee Region: Europe
Task Force in which work is to be carried out: International Polished Wafers Task Force


1. Rationale: Gallium nitride on silicon wafers represent emerging markets with applications such as LED or high-frequency power devices. At present, the specifications for silicon wafer substrates requested by customers of such wafers differ widely. This new specification aims at unifying these silicon wafer specifications. Unification of specifications will be of great benefit for the entire related industry, which represents a huge future market.
Rate the Estimated Effect on the Industry
1: Major effect on entire industry or on multiple important industry sectors

Rate the Estimated Technical Difficulty of the Activity
II: Some Difficulty - Disagreements on known requirements exist but developing consensus is possible

2. Scope:
a: Define the areas to be covered or addressed by this activity or document:
Specifications for key parameters of Si wafers used as substrates for GaN epitaxial layers.

b: Expected result of activity
New Standard

3. Projected Timetable for Completion:
a: General Milestones
a. Activity Start: 10/01/2012b. 1st Draft by: 03/01/2013
c. Preballot by: d. Technical Ballot by: 07/01/2013
e. Committee Approval By:10/01/2013




Safety Considerations:
The resulting document is expected NOT to be a Safety Guideline


Intellectual Property Considerations:
a. In complying with the standard or safety guideline to be developed, the use of patented technology or a copyrighted item(s) is NOT required
b. The body of the standard and any appendices or related information sections will NOT include copyrighted material

Comments, Special Circumstances: None.

Approval: Activity approved by Committee/GCS on October 11, 2013