Activity Number: 5269
SNARF for: New Standard: Guide for Terminology for Measured Geometrical Parameters of Through-Silicon Vias (TSVs) in 3DS-IC Structures
SEMI International Standards
SEMI New Activity Report Form (SNARF)
1. Rationale: Different technologies can measure various geometrical parameters of an individual TSV, or of an array of TSV’s, such as pitch, top CD, top diameter, top area, depth, taper (or sidewall angle), bottom area, bottom CD, bottom diameter, and possibly others. However it is currently difficult to compare and/or correlate results from the various measurement technologies for various TSV dimensions. In some cases certain parameters may be described by similar names, but are actually different aspects of the TSV geometry. This standard will attempt to: a) Group the measurement results provided by the various technologies in such a way that correlations and comparisons are valid where possible; b) Clearly indicate the underlying issues in cases where valid comparisons and correlations are not geometrically valid.
Rate the Estimated Effect on the Industry
2: Major effect on an industry sector - identify the relevant sector
Rate the Estimated Technical Difficulty of the Activity
II: Some Difficulty - Disagreements on known requirements exist but developing consensus is possible
a: Define the areas to be covered or addressed by this activity or document:
Define terms currently used to describe TSV parameters which are not defined in current SEMI Standards, and list those that are already defined in current SEMI Standards. For each parameter (or group of parameters), the various technologies that are used will be listed, along with any limitations and/or issues and needs particular to that technology and to making valid comparisons to the others. Include applicable ranges for valid measurements where possible.
b: Expected result of activity
3. Projected Timetable for Completion:
|Originating Global Technical Committee: 3DS-IC|
|Originating Technical Committee Region: North America|
|Task Force in which work is to be carried out: 3DS-IC Inspection and Metrology|
|a: General Milestones|
|a. Activity Start: 03/01/2011||b. 1st Draft by: 10/25/2011|
|c. Preballot by: ||d. Technical Ballot by: 01/01/2012|
|e. Committee Approval By:03/01/2012|
The resulting document is expected NOT to be a Safety Guideline
Intellectual Property Considerations:
a. In complying with the standard or safety guideline to be developed, the use of patented technology or a copyrighted item(s) is NOT required
b. The body of the standard and any appendices or related information sections will NOT include copyrighted material
Comments, Special Circumstances: None.
Approval: Activity approved by Committee/GCS on July 12, 2011
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