SEMI International Standards TASK FORCE ORGANIZATION FORM (TFOF)

Date Prepared: 11/17/2023

Revised (if Applicable):

Name of Task Force (TF): SiC Epi Defects Task Force

Global Technical Committee: Compound Semiconductor Materials

Originating Technical Committee Region: Europe

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1. Charter: (State the objective of the proposed TF.)
The objective of the TF is to unify the nomenclature of defects found in homoepitaxial layers of SiC and reported by the relevant non-destructive metrology techniques.
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2. Scope: (Define the specific activities that the TF will conduct.)
· Define the properties of distinct defects in homoepitaxial SiC layers, including their appearance in images of measurement techniques
Define the names of these distinct defects
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3. Formal linkages with TFs in other Regions/Locales: (Show each associated TF and its parent global technical committee; indicate nature of relationship – global TF, observer TF, etc.)

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4. Formation Date:(TF formed on)

Task Force formed on: 11/16/2023
Task Force approved by Committee/GCS on: 11/16/2023

5. Comments
None.