SEMI International Standards TASK FORCE ORGANIZATION FORM (TFOF)

Date Prepared: 11/17/2023

Revised (if Applicable):

Name of Task Force (TF): Silicon Carbide Engineered Substrate Task Force

Global Technical Committee: Compound Semiconductor Materials

Originating Technical Committee Region: Europe

_____________________________________________________________________________
1. Charter: (State the objective of the proposed TF.)
Establish a new standard for SiC engineered substrates.
_____________________________________________________________________________
2. Scope: (Define the specific activities that the TF will conduct.)
Engineered substrate / direct bonded substrates of silicon carbide with a diameter of 150 and 200 mm. Defects specific to the engineered / direct bonded substrates. Electrical properties on polycrystal layer, bonding interface and the thin monocrystal layer. Thickness targets and tolerances. Edge profiles and monolayer definition at the edge. Edge exclusion for measurements and definition of useful area.
The suggested standard will inherit silicon carbide fundamentals, dislocations, and bulk defects from M55.
_____________________________________________________________________________
3. Formal linkages with TFs in other Regions/Locales: (Show each associated TF and its parent global technical committee; indicate nature of relationship – global TF, observer TF, etc.)

_____________________________________________________________________________
4. Formation Date:(TF formed on)

Task Force formed on: 11/16/2023
Task Force approved by Committee/GCS on: 11/16/2023

5. Comments
None.