SEMI International Standards
Date Prepared: 03/30/2010Revised (if Applicable):

Name of Task Force (TF): PV wafer measurement method Task Force

Global Technical Committee: Photovoltaic
Originating Technical Committee Region: Taiwan

1. Charter: (State the objective of the proposed TF.)

Due to increasing demand for quality, PV Si Wafer Metrology such as Geometry (Dimensions, TTV, Warp/Sori) Electrical Character (Resistivity, Carrier Lifetime), Visible and Non-Visible Defect, Saw-Mark, Stain on Wafer Surface, etc., have become standard test requirements for c-Si (both Mono- and Multi- ) wafer manufacturing. However, no standard has been set in this field. As a result, c-Si solar wafer manufacturers are confused by very different specs with their customers, which dramatically increases the cost and add loading in process control. This standard aims to gather industry consensus and provide a qualification and/or classification criteria for c-Si Wafer Metrology.

2. Scope: (Define the specific activities that the TF will conduct.)

1. This standard will cover Metrology and Defects of wafers.
2. A draft will be proposed with minimum preoccupied preference to either wafer manufacturers or cell manufacturers. Instead, all the metrics were proposed base on how the defect(s) will actually impact the cell reliability, performance or production yield.
3. At the wafer manufacturing process, the inspection method will cover the wafers made by the newly developed diamond wire saw.

3. Formal linkages with TFs in other Regions/Locales: (Show each associated TF and its parent global technical committee; indicate nature of relationship – global TF, observer TF, etc.)

4. Formation Date:(TF formed on)

Task Force formed on: 03/30/2010
Task Force approved by Committee/GCS on: 03/30/2010