| 4689 | Revision of SEMI M55-0315, Specification for Polished Monocrystalline Silicon Carbide Wafers | Published 08/03/2017 | Region of Action- NA |
| 5795 | New Standard: Test Method for Contactless Resistivity Measurement of Semi-Insulating Semiconductors | Published as SEMI M87-0116 01/29/2016 | Region of Action- Europe |
| 5882 | Line Item Revision to SEMI M10-1296 With Title Change To: Terminology for Identification of Structures and Features Seen on Gallium Arsenide Wafers | See Line Items Below | Region of Action- NA |
5882
LI - 1 | Correct Title for Conformance | Published 08/19/2016 | Region of Action- NA |
| 5883 | Line Item Revision to SEMI M42-0211, Specification for Compound Semiconductor Epitaxial Wafer | See Line Items Below | Region of Action- NA |
5883
LI - 1 | Move section 3.3 DIN standard reference from Referenced Standards and Documents section to new section 10 Related Documents | Published 08/19/2016 | Region of Action- NA |
| 5884 | Line Item Revision to SEMI M65-0306 With Title Change To: Specification for Sapphire Substrates to use for Compound Semiconductor Epitaxial Wafers | See Line Items Below | Region of Action- NA |
5884
LI - 1 | Correct the title of this standard from “Specifications” to “Specification” | Published 08/19/2016 | Region of Action- NA |
| 5885 | Line Item Revision to SEMI M75-0812 With Title Change To: Specification for Polished Monocrystalline Gallium Antimonide Wafers | See Line Items Below | Region of Action- NA |
5885
LI - 1 | Correct the title of this standard from “Specifications” to “Specification” | Published 08/19/2016 | Region of Action- NA |
| 5886 | Line Item Revision to SEMI M9-0914 With Title Change To: Specification for Polished Monocrystalline Gallium Arsenide Wafers
| See Line Items Below | Region of Action- NA |
5886
LI - 1 | Correct the title of this standard from “Specifications” to “Specification” | Published 08/19/2016 | Region of Action- NA |
| 6015 | Line Item Revision SEMI M81-0611, Guide to Defects Found in Monocrystalline Silicon Carbide Substrates (5 year review) | See Line Items Below | Region of Action- Europe |
6015
LI - 1 | Add M83 reference in sections 4, 5, and 8. | Published 04/12/2018 | Region of Action- Europe |
| 6118 | Revision of SEMI M54-0304 (Reapproved 0611) - Guide for Semi-Insulating (SI) GaAs Material Parameters | Published 03/29/2019 | Region of Action- Europe |
| 6132 | Line Item Revision of SEMI M79-0211 Specification for Round 100 mm Polished Monocrystalline Germanium Wafers for Solar Cell Applications
| See Line Items Below | Region of Action- NA |
6132
LI - 1 | Replace MF534 with MF1390 throughout the document | Published 02/02/2018 | Region of Action- NA |
| 6133 | Line Item Revision of SEMI M10-0816 Terminology For Identification Of Structures And Features Seen On Gallium Arsenide Wafers | See Line Items Below | Region of Action- NA |
6133
LI - 1 | Correct reference in section 2 | Published 02/02/2018 | Region of Action- NA |
| 6134 | Reapproval of
SEMI M23-0811 — Specification For Polished Monocrystalline Indium Phosphide Wafers
SEMI M23.1-0211 — Specification For Round 50 Mm Diameter Polished Monocrystalline Indium Phosphide Wafers
SEMI M23.2-0211 — Specification For Round 3 Inch (76.2 Mm) Diameter Polished Monocrystalline Indium Phosphide Wafers
SEMI M23.4-0211 — Specification For Round 100 Mm Polished Monocrystalline Indium Phosphide Wafers For Electronic And Optoelectronic Device Applications (Dove-Tail Type)
SEMI M23.5-0211 — Specification For Round 100 Mm Polished Monocrystalline Indium Phosphide Wafers For Electronic And Optoelectronic Device Applications (V-Groove Option), and
SEMI M23.6-0211 — Specification For Round 150 Mm Polished Monocrystalline Indium Phosphide Wafers (Notched) | Published 02/02/2018 | Region of Action- NA |
| 6474 | Revision to SEMI M82-0813: Test Method for the Carbon Acceptor Concentration in Semi-Insulating Gallium Arsenide Single Crystals by Infrared Absorption Spectroscopy | Published 08/31/2020 | Region of Action- Europe |
| 6546 | Revision to SEMI M83-0913 Test Method For Determination Of Dislocation Etch Pit Density In Monocrystals Of III-V Compound Semiconductors | Published 08/28/2020 | Region of Action- Europe |
| 6615 | Revision of SEMI M55-0817, Specification for Polished Monocrystalline Silicon Carbide Wafers | Published 09/17/2021 | Region of Action- Europe |
| 6693 | New Standard: Specification for 4H-SiC Homoepitaxial Wafer | Passed Technical Review - Awaiting Procedural Review 04/27/2022 | Region of Action- Other |
| 6717 | New Standard: Test Method for Determination of Threading Screw Dislocation Density In 4H-SIC by X-Ray Topography | Published as SEMI M91-0622 06/17/2022 | Region of Action- Europe |
| 6735 | Withdrawal of SEMI M42 - Specification for Compound Semiconductor Epitaxial Wafers | Published 10/22/2021 | Region of Action- NA |
| 6736 | Reapproval of SEMI M86 - Specification for Polished Monocrystalline c-Plane Gallium Nitride Wafers | Failed Technical Review and Returned to TF 05/19/2021 | Region of Action- NA |
| 6767 | New Standard: Test Method for Flatness of Silicon Carbide Wafers by Optical Interference | Failed Technical Review and Returned to TF 04/27/2022 | Region of Action- Other |
| 6768 | New Standard: Test Method for Micropipe Density of Silicon Carbide Wafer by Laser Reflection | Failed Technical Review and Returned to TF 04/27/2022 | Region of Action- Other |
| 6768A | New Standard: Test Method for Micropipe Density of Silicon Carbide Wafer by Laser Reflection | Failed Technical Review and Returned to TF 04/26/2023 | Region of Action- Other |
| 6769 | New Standard: Test Method for Residual Stress of Silicon Carbide Wafers by Photoelastic | Failed Technical Review and Returned to TF 04/27/2022 | Region of Action- Other |
| 6769A | New Standard: Test Method Qualitative for Residual Stress of Silicon Carbide Wafers by Photoelastic | Failed Technical Review and Returned to TF 04/26/2023 | Region of Action- Other |
| 6769B | New Standard: Test Method for Residual Stress of Silicon Carbide Wafers by Photoelastic | Drafting 02/10/2024 | Region of Action- Other |
| 6779 | Reapproval of SEMI M64 - Test Method for the EL2 Deep Donor Concentration in Semi-Insulating (SI) Gallium Arsenide Single Crystals by Infrared Absorption Spectroscopy | Published 04/08/2022 | Region of Action- Europe |
| 6780 | Line Item Revision of SEMI M87 - Test Method for Contactless Resistivity Measurement of Semi-Insulating Semiconductors | See Line Items Below | Region of Action- Europe |
6780
LI - 1 | Delete unnecessary reference of appendix 1 | Published 04/07/2022 | Region of Action- Europe |
6780
LI - 2 | Delete unnecessary reference of appendix 2 | Published 04/07/2022 | Region of Action- Europe |
| 6805 | Revision of SEMI M9.5 with title change from “Specification for Round 100mm Polished Monocrystalline Gallium Arsenide Wafers for Electronic Device Applications” to “Specification for Round 100mm Polished Monocrystalline Gallium Arsenide Wafers | Published 08/18/2022 | Region of Action- NA |
| 6806 | Revision of M86-0915 Specification for polished monocrystalline c-plane gallium nitride wafers | Published 09/16/2022 | Region of Action- NA |
| 6806 | Revision of M86-0915 Specification for polished monocrystalline c-plane gallium nitride wafers | Published 09/16/2022 | Region of Action- NA |
| 6818 | Withdrawal of SEMI M9.1-0813 — SPECIFICATION FOR ROUND 50.8 MM POLISHED MONOCRYSTALLINE GALLIUM ARSENIDE WAFERS FOR ELECTRONIC DEVICE APPLICATIONS | Published 08/12/2022 | Region of Action- NA |
| 6819 | Withdrawal of SEMI M9.6-0813 — SPECIFICATION FOR ROUND 125 MM DIAMETER POLISHED MONOCRYSTALLINE GALLIUM ARSENIDE WAFERS | Published 08/12/2022 | Region of Action- NA |
| 6870 | New Standard: Test Method for Quantifying Basal Plane Disclocation Density in 4h-Sic by X-Ray Diffraction Topography/Imaging | Published as SEMI M93-0923 09/15/2023 | Region of Action- Europe |
| 6915 | Withdrawal of SEMI M65-0816 - Specification for Sapphire Substrates to use for Compound Semiconductor Epitaxial Wafers | Published 01/13/2023 | Region of Action- NA |
| 6952 | Reapproval of SEMI M10-0218 Terminology For Identification Of Structures And Features Seen On Gallium Arsenide Wafers | Published 04/27/2023 | Region of Action- NA |
| 6953 | Line Item Revision ofSEMI M79-0218
Specification For Round 100 mm Polished Monocrystalline Germanium Wafers For Solar Cell Applications | See Line Items Below | Region of Action- NA |
6953
LI - 1 | Add section 6 (Requirements) to conform with SEMI Procedure Manual | Published 06/02/2023 | Region of Action- NA |
| 6954 | Line Item Revision Of SEMI M23-0811 (Reapproved 0218) Specification For Polished Monocrystalline Indium Phosphide Wafers | See Line Items Below | Region of Action- NA |
6954
LI - 1 | Replace SEMI MF534 with MF1390 | Published 06/09/2023 | Region of Action- NA |
| 7053 | Line Item Revisions of SEMI M63-0915, Test Method for Measuring the Al Fraction In AlGaAs on GaAs Substrates by High Resolution X-Ray Diffraction | See Line Items Below | Region of Action- Europe |
7053
LI - 1 | Add new definitions and make related changes | Published 11/30/2023 | Region of Action- Europe |
7053
LI - 2 | Make changes to sections to conform with SEMI Procedure Manual | Published 11/30/2023 | Region of Action- Europe |
7053
LI - 3 | ·Changes references in section 16, Related Documents | Published 11/30/2023 | Region of Action- Europe |
| 7161 | Line Item Revision of SEMI M93-0923,Test Method for Quantifying Basal Plane Dislocation Density in 4H-SiC by X-Ray Diffraction Topography/Imaging | See Line Items Below | Region of Action- Europe |
7161
LI - 1 | Make changes in Appendix 1 | Passed Technical Review - Awaiting Procedural Review 01/05/2024 | Region of Action- Europe |
| 7211 | Line Item Revision to SEMI M92-0423, Specification for 4H-SiC Homoepitaxial Wafer | See Line Items Below | Region of Action- Japan |
7211
LI - 1 | Revise the test pattern in section 6.4.3.1 | Drafting 03/15/2024 | Region of Action- Japan |
7211
LI - 2 | Revise the specification of test points coordinates in Table 2 in section 6.4.3.2 | Drafting 03/15/2024 | Region of Action- Japan |
7211
LI - 3 | Revise the calculation formula of Tolerance in section 6.4.3.3 | Drafting 03/15/2024 | Region of Action- Japan |
7211
LI - 4 | Revise the specification of carrier concentration of Tolerance in Table 3 in section 6.4.3.4 | Drafting 03/15/2024 | Region of Action- Japan |
7211
LI - 5 | Revise the specification of thickness of Tolerance in Table 4 in section 6.4.4.2 | Drafting 03/15/2024 | Region of Action- Japan |
| R6693 | New Standard: Specification for 4H-SiC Homoepitaxial Wafer | Published as SEMI M92-0423 04/28/2023 | Region of Action- Other |