SEMI International Standards
Document Status Report

This page provides a the status of documents being worked on by various Task Forces in the SEMI International Standards program.

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Compound Semiconductor Materials

3784BRevision to Add New Subordinate Standard:Specification for 100 mm round polished monocrystalline 4H and 6H Silicon Carbide Wafers to SEMI M55, Specification for Polished Monocrystalline Silicon Carbide WafersDrafting 07/23/2014Region of Action- Europe
4618New Standard: Test Method for the Carbon Acceptor Concentration in Semi-Insulating Gallium Arsenide Single Crystals by Infrared Absorption SpectroscopyPublished as SEMI M82-0712 07/31/2012Region of Action- Europe
46895-year review of SEMI M55, M55.1, and M55.2Drafting 08/11/2010Region of Action- NA
4806New Standard: Guide to Defects Found on Monocrystalline Silicon Carbide SubstratesPublished as SEMI M81-0611 06/17/2011Region of Action- Europe
4808New Standard: Specification for Round 100mm Polished Monocrystalline Germanium Wafers for Solar Cell ApplicationsPublished as SEMI M79-0211 01/27/2011Region of Action- NA
4809Line Item Revisions to SEMI M75-0309, Specifications for Polished Monocrystalline Gallium Antimonide WafersSee Line Items Below Region of Action- Europe
4809
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Change to section 6.2Published 08/17/2012Region of Action- Europe
4809
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Change to table 4Published 08/17/2012Region of Action- Europe
4810New Standard: Test Method for Detemination of Dislocation Etch Pit Density in Monocrystals of III-V Compound SemiconductorsPublished as SEMI M83-1112 11/28/2012Region of Action- Europe
4895Revision to SEMI M23-0703, Specification for Polished Monocrystalline Indium Phosphide WafersPublished 02/28/2011Region of Action- NA
4896Revision to SEMI M23.1-0600, Standard for Round 50 mm Diameter Polished Monocrystalline Indium Phosphide Wafers, with title change to: Specification for Round 50 mm Diameter Polished Monocrystalline Indium Phosphide WafersPublished 02/28/2011Region of Action- NA
4897Revision to SEMI M23.2-1000, Standard for Round 3 inch (76.2 mm) Diameter Polished Monocrystalline Indium Phosphide Wafers, with title change to: Specification for Round 76.2 mm (3 inch) Diameter Polished Monocrystalline Indium Phosphide WafersPublished 02/28/2011Region of Action- NA
4898Revision to SEMI M23.3-0600, Standard for Rectangular Polished Monocrystalline Indium Phosphide Wafers, with title change to: Specification for Rectangular Polished Monocrystalline Indium Phosphide WafersDrafting 09/10/2010Region of Action- NA
4898Reapproval of SEMI M23.3, Standard for Rectangular Polished Monocrystalline Indium Phosphide WafersDrafting 01/11/2010Region of Action- NA
4899Revision to SEMI M23.4-0999, Specification for Round 100 mm Polished Monocrystalline Indium Phosphide Wafers for Electronic and Optoelectronic Device Applications (Dove-Tail Type)Published 02/28/2011Region of Action- NA
4900Revision to SEMI M23.5-1000, Specification for Round 100 mm Polished Monocrystalline Indium Phosphide Wafers for Electronic and Optoelectronic Device Applications (V-Groove Option)Published 02/28/2011Region of Action- NA
4901Reapproval of SEMI M23.6-0703, Specification for Round 150 mm Polished Monocrystalline Indium Phosphide Wafers (Notched)Published 02/28/2011Region of Action- NA
4979 infoNew Standard: Specification for Polished Monocrystalline Gallium Nitride WafersDrafting 02/28/2011Region of Action- NA
4979 New Standard: Specification for Polished Monocrystalline C-Plane Gallium Nitride WafersFailed Technical Review and Returned to TF 05/21/2014Region of Action- NA
4979ANew Standard: Specification for Polished Monocrystalline C-Plane Gallium Nitride WafersDrafting 08/24/2014Region of Action- NA
4986Revision of SEMI M42-1000, Specification for Compound Semiconductor Epitaxial Wafers Published 02/28/2011Region of Action- NA
4988Revision to SEMI M9-0708, Specifications for Polished Monocrystalline Gallium Arsenide Slices Published 02/28/2011Region of Action- NA
5075Reapproval of SEMI M54-0304, Guide for Semi-Insulating (SI) GaAs Material ParametersPublished 06/24/2011Region of Action- Europe
5076Revision to SEMI M23-0211, Specification for Polished Monocrystalline Indium Phosphide WafersPublished 08/19/2011Region of Action- NA
5077Revision to SEMI M9-0211, Specifications for Polished Monocrystalline Gallium Arsenide Slices, with title change to: Specifications for Polished Monocrystalline Gallium Arsenide WafersPublished 08/19/2011Region of Action- NA
5116Withdrawal of SEMI M23.3, Standard for Rectangular Polished Monocrystalline Indium Phosphide WafersPublished 08/19/2011Region of Action- NA
5358Revision to SEMI M9.3-89, with title change to: Specification for Round 2 inch Diameter Polished Monocrystalline Gallium Arsenide Wafers for Optoelectric ApplicationsPublished 08/31/2012Region of Action- NA
5359Revision to SEMI M9.4-89, with title change to: Specification for Round 3 inch Diameter Polished Monocrystalline Gallium Arsenide Wafers for Optoelectric ApplicationsPublished 08/31/2012Region of Action- NA
5360Reapproval of SEMI M9.8, Specification for Round 200 mm Polished Monocrystalline Gallium Arsenide Wafers (Notched)Published 08/31/2012Region of Action- NA
5370Revision to Add a New Subordinate Standard: Specification for 150 mm Round Polished Monocrystalline 4H and 6H Silicon Carbide Wafers to SEMI M55-0308, Specification for Polished Monocrystalline Silicon Carbide WafersPublished as SEMI M55-0814;SEMI M55.3-0814 08/29/2014Region of Action- Europe
5498Line Item Revision to SEMI M82-0712: Test Method for the Carbon Acceptor Concentration in Semi-Insulating Gallium Arsenide Single Crystals by Infrared Absorption SpectroscopySee Line Items Below Region of Action- Europe
5498
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Revision of Equation 11 Published 08/21/2013Region of Action- Europe
5499Revision to SEMI M83-1112, Test Method for Determination of Dislocation Etch Pit Density in Monocrystals of III-V-Compound Semiconductors Published 09/27/2013Region of Action- Europe
5544Revision of SEMI M9.1-96E (Reapproved 0308), Standard for Round 50.8 mm Polished Monocrystalline Gallium Arsenide Wafers for Electronic Device Applications with title change to: Specification for Round 50.8 mm Polished Monocrystalline Gallium Arsenide Wafers for Electronic Device ApplicationsPublished 08/30/2013Region of Action- NA
5545Revision of SEMI M9.2-96E (Reapproved 0308), Standard for Round 76.2 mm Polished Monocrystalline Gallium Arsenide Wafers for Electronic Device Applications with title change to: Specification for Round 76.2 mm Polished Monocrystalline Gallium Arsenide Wafers for Electronic Device ApplicationsPublished 08/30/2013Region of Action- NA
5546Revision of SEMI M9.5-96E (Reapproved 0308), Standard for Round 100 mm Polished Monocrystalline Gallium Arsenide Wafers for Electronic Device Applications with title change to: Specification for Round 100 mm Polished Monocrystalline Gallium Arsenide Wafers for Electronic Device ApplicationsPublished 08/30/2013Region of Action- NA
5547Revision of SEMI M9.6-95E (Reapproved 0308), Standard for Round 125 mm Diameter Polished Monocrystalline Gallium Arsenide Wafers with title change to: Specification for Round 125 mm Diameter Polished Monocrystalline Gallium Arsenide WafersPublished 08/30/2013Region of Action- NA
5593Line Item Revision to SEMI M9.7-0708, Specification for Round 150 mm Diameter Polished Monocrystalline Gallium Arsenide Wafers (Notched)See Line Items Below Region of Action- NA
5593
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Addition of Thickness, center point of 550 m to 4, Physical RequirementsPublished 09/26/2014Region of Action- NA