| 4618 | New Standard: Test Method for the Carbon Acceptor Concentration in Semi-Insulating Gallium Arsenide Single Crystals by Infrared Absorption Spectroscopy | Published as SEMI M82-0712 07/31/2012 | Region of Action- Europe |
| 4689 | 5-year review of SEMI M55, M55.1, and M55.2 | Drafting 08/11/2010 | Region of Action- NA |
| 4806 | New Standard: Guide to Defects Found on Monocrystalline Silicon Carbide Substrates | Published as SEMI M81-0611 06/17/2011 | Region of Action- Europe |
| 4808 | New Standard: Specification for Round 100mm Polished Monocrystalline Germanium Wafers for Solar Cell Applications | Published as SEMI M79-0211 01/27/2011 | Region of Action- NA |
| 4809 | Line Item Revisions to SEMI M75-0309, Specifications for Polished Monocrystalline Gallium Antimonide Wafers | See Line Items Below | Region of Action- Europe |
4809
LI - 1 | Change to section 6.2 | Published 08/17/2012 | Region of Action- Europe |
4809
LI - 2 | Change to table 4 | Published 08/17/2012 | Region of Action- Europe |
| 4810 | New Standard: Test Method for Detemination of Dislocation Etch Pit Density in Monocrystals of III-V Compound Semiconductors | Published as SEMI M83-1112 11/28/2012 | Region of Action- Europe |
| 4895 | Revision to SEMI M23-0703, Specification for Polished Monocrystalline Indium Phosphide Wafers | Published 02/28/2011 | Region of Action- NA |
| 4896 | Revision to SEMI M23.1-0600, Standard for Round 50 mm Diameter Polished Monocrystalline Indium Phosphide Wafers, with title change to: Specification for Round 50 mm Diameter Polished Monocrystalline Indium Phosphide Wafers | Published 02/28/2011 | Region of Action- NA |
| 4897 | Revision to SEMI M23.2-1000, Standard for Round 3 inch (76.2 mm) Diameter Polished Monocrystalline Indium Phosphide Wafers, with title change to: Specification for Round 76.2 mm (3 inch) Diameter Polished Monocrystalline Indium Phosphide Wafers | Published 02/28/2011 | Region of Action- NA |
| 4898 | Revision to SEMI M23.3-0600, Standard for Rectangular Polished Monocrystalline Indium Phosphide Wafers, with title change to: Specification for Rectangular Polished Monocrystalline Indium Phosphide Wafers | Drafting 09/10/2010 | Region of Action- NA |
| 4898 | Reapproval of SEMI M23.3, Standard for Rectangular Polished Monocrystalline Indium Phosphide Wafers | Drafting 01/11/2010 | Region of Action- NA |
| 4899 | Revision to SEMI M23.4-0999, Specification for Round 100 mm Polished Monocrystalline Indium Phosphide Wafers for Electronic and Optoelectronic Device Applications (Dove-Tail Type) | Published 02/28/2011 | Region of Action- NA |
| 4900 | Revision to SEMI M23.5-1000, Specification for Round 100 mm Polished Monocrystalline Indium Phosphide Wafers for Electronic and Optoelectronic Device Applications (V-Groove Option) | Published 02/28/2011 | Region of Action- NA |
| 4901 | Reapproval of SEMI M23.6-0703, Specification for Round 150 mm Polished Monocrystalline Indium Phosphide Wafers (Notched) | Published 02/28/2011 | Region of Action- NA |
| 4979 info | New Standard: Specification for Polished Monocrystalline Gallium Nitride Wafers | Drafting 02/28/2011 | Region of Action- NA |
| 4986 | Revision of SEMI M42-1000, Specification for Compound Semiconductor Epitaxial Wafers | Published 02/28/2011 | Region of Action- NA |
| 4988 | Revision to SEMI M9-0708, Specifications for Polished Monocrystalline Gallium Arsenide Slices | Published 02/28/2011 | Region of Action- NA |
| 5075 | Reapproval of SEMI M54-0304, Guide for Semi-Insulating (SI) GaAs Material Parameters | Published 06/24/2011 | Region of Action- Europe |
| 5076 | Revision to SEMI M23-0211, Specification for Polished Monocrystalline Indium Phosphide Wafers | Published 08/19/2011 | Region of Action- NA |
| 5077 | Revision to SEMI M9-0211, Specifications for Polished Monocrystalline Gallium Arsenide Slices, with title change to: Specifications for Polished Monocrystalline Gallium Arsenide Wafers | Published 08/19/2011 | Region of Action- NA |
| 5116 | Withdrawal of SEMI M23.3, Standard for Rectangular Polished Monocrystalline Indium Phosphide Wafers | Published 08/19/2011 | Region of Action- NA |
| 5358 | Revision to SEMI M9.3-89, with title change to: Specification for Round 2 inch Diameter Polished Monocrystalline Gallium Arsenide Wafers for Optoelectric Applications | Published 08/31/2012 | Region of Action- NA |
| 5359 | Revision to SEMI M9.4-89, with title change to: Specification for Round 3 inch Diameter Polished Monocrystalline Gallium Arsenide Wafers for Optoelectric Applications | Published 08/31/2012 | Region of Action- NA |
| 5360 | Reapproval of SEMI M9.8, Specification for Round 200 mm Polished Monocrystalline Gallium Arsenide Wafers (Notched) | Published 08/31/2012 | Region of Action- NA |
| 5498 | Line Item Revision to SEMI M82-0712: Test Method for the Carbon Acceptor Concentration in Semi-Insulating Gallium Arsenide Single Crystals by Infrared Absorption Spectroscopy | See Line Items Below | Region of Action- Europe |
5498
LI - 1 | Revision of Equation 11 | Passed Technical Review - Awaiting Procedural Review 04/17/2013 | Region of Action- Europe |
| 5499 | Revision to SEMI M83-1112, Test Method for Determination of Dislocation Etch Pit Density in Monocrystals of III-V-Compound Semiconductors | Passed Technical Review - Awaiting Procedural Review 04/17/2013 | Region of Action- Europe |
| 5544 | Revision of SEMI M9.1-96E (Reapproved 0308), Standard for Round 50.8 mm Polished Monocrystalline Gallium Arsenide Wafers for Electronic Device Applications with title change to: Specification for Round 50.8 mm Polished Monocrystalline Gallium Arsenide Wafers for Electronic Device Applications | Drafting 02/15/2013 | Region of Action- NA |
| 5545 | Revision of SEMI M9.2-96E (Reapproved 0308), Standard for Round 76.2 mm Polished Monocrystalline Gallium Arsenide Wafers for Electronic Device Applications | Drafting 02/06/2013 | Region of Action- NA |
| 5545 | Revision of SEMI M9.2-96E (Reapproved 0308), Standard for Round 76.2 mm Polished Monocrystalline Gallium Arsenide Wafers for Electronic Device Applications with title change to: Specification for Round 76.2 mm Polished Monocrystalline Gallium Arsenide Wafers for Electronic Device Applications | Drafting 02/15/2013 | Region of Action- NA |
| 5546 | Revision of SEMI M9.5-96E (Reapproved 0308), Standard for Round 100 mm Polished Monocrystalline Gallium Arsenide Wafers for Electronic Device Applications with title change to: Specification for Round 100 mm Polished Monocrystalline Gallium Arsenide Wafers for Electronic Device Applications | Drafting 02/15/2013 | Region of Action- NA |
| 5547 | Revision of SEMI M9.6-95E (Reapproved 0308), Standard for Round 125 mm Diameter Polished Monocrystalline Gallium Arsenide Wafers with title change to: Specification for Round 125 mm Diameter Polished Monocrystalline Gallium Arsenide Wafers | Drafting 02/15/2013 | Region of Action- NA |