| 5016 | Line Item Revision to SEMI HB3-1113, Mechanical Interface Specification for 150 mm HB-LED Load Port | See Line Items Below | Region of Action- NA |
5016
LI - 1 | Correct the title of this Standard from “Mechanical Interface Specification for 150 mm HB-LED Load Port” to “Specification for the Mechanical Interface for 150 mm HB-LED Load Port” | Published 10/28/2016 | Region of Action- NA |
| 5265 | New Standard: Specifications for 150 mm Diameter Sapphire Wafers Intended for Use for Manufacturing HB-LED Devices | Failed Technical Review and Returned to TF 04/05/2012 | Region of Action- NA |
| 5265A | New Standard: Specifications for Sapphire Wafers Intended for Use for Manufacturing High Brightness-Light Emitting Diode Devices | Failed Procedural Review - Returned to Committee 08/30/2012 | Region of Action- NA |
| 5265B | New Standard: Specifications for Sapphire Wafers Intended for Use for Manufacturing High Brightness-Light Emitting Diode Devices | Published as SEMI HB1-0113 01/25/2013 | Region of Action- NA |
| 5420 | New Standard: Specification for 150 mm Open Plastic and Metal Wafer Cassettes Intended for Use for Manufacturing HB-LED Devices | Failed Technical Review and Returned to TF 07/12/2012 | Region of Action- NA |
| 5420A | New Standard: Specification for 150mm Open Plastic and Metal Wafer Cassettes Intended for Use for Manufacturing HB-LED Devices | Published as SEMI HB2-0613 06/21/2013 | Region of Action- NA |
| 5468 | New Standard: Mechanical Interface Specification for 150 mm HB-LED Load Port | Published as SEMI HB3-1113 11/19/2013 | Region of Action- NA |
| 5469 | New Standard: Specification of Communication Interfaces for High Brightness LED Manufacturing Equipment (HB-LED ECI) | Published as SEMI HB4-0913 09/27/2013 | Region of Action- NA |
| 5684 | Line Item Revisions to SEMI HB1-0113, Specifications for Sapphire Wafers Intended for Use for Manufacturing High Brightness-Light Emitting Diode Devices | See Line Items Below | Region of Action- NA |
5684
LI - 1 | Revisions and Changes in Light Blue Highlight | Published 08/13/2014 | Region of Action- NA |
5684
LI - 2 | Revisions and Changes in Light Green Highlight | Published 08/13/2014 | Region of Action- NA |
5684
LI - 3 | Revisions and Changes in Light Yellow Highlight | Published 08/13/2014 | Region of Action- NA |
| 5723 | New Standard: Specification for Single Crystal Sapphire Intended for Use for Manufacturing HB- LED Wafers | Failed Technical Review and Returned to TF 04/22/2016 | Region of Action- Other |
| 5723A | New Standard: Specification for Single Crystal Sapphire Intended for Use for Manufacturing HB- LED Wafers | Passed Technical Review - Awaiting Procedural Review 10/14/2016 | Region of Action- Other |
| 5741 | Line item revisions to SEMI HB1-0814, Specifications for Sapphire Wafers Intended for Use for Manufacturing High Brightness-Light Emitting Diode Devices | See Line Items Below | Region of Action- NA |
5741
LI - 1 | Update References to Section 3.1 and Table R1-1, Row 2-3.8 and Row 2-3.10 | Published 03/19/2015 | Region of Action- NA |
| 5747 | New Standard: Test Method for Measurement of Saw Marks on Crystalline Sapphire Wafers Using Optical Probes | Published as SEMI HB5-0615 06/25/2015 | Region of Action- NA |
| 5748 | New Standard: Test Method for Measurement of Thickness and Shape of Crystalline Sapphire Wafers Using Optical Probes | Published as SEMI HB6-0615 06/25/2015 | Region of Action- NA |
| 5749 | New Standard: Test Method for Measurement of Waviness of Crystalline Sapphire Wafers Using Optical Probes | Published as SEMI HB7-0615 06/25/2015 | Region of Action- NA |
| 5775 | New Standard: Specification for Sapphire Single Crystal Ingot Intended for Use for Manufacturing HB-LED Wafers | Failed Technical Review and Returned to TF 04/22/2016 | Region of Action- Other |
| 5775A | New Standard: Specification for Sapphire Single Crystal Ingot Intended for Use for Manufacturing HB-LED Wafers | Passed Technical Review - Awaiting Procedural Review 10/14/2016 | Region of Action- Other |
| 5776 | New Standard: Test Method for Detecting Surface Defects of GaN based LED Epitaxial Wafer Used for Manufacturing HB-LED | Failed Technical Review and Returned to TF 04/20/2017 | Region of Action- Other |
| 5818 | Line Items Revision to SEMI HB1-XXXX, Specifications for Sapphire Wafers Intended for Use for Manufacturing High Brightness-Light Emitting Diode Devices | See Line Items Below | Region of Action- NA |
5818
LI - 1 | Correct the title of this standard from “Specifications” to “Specification” | Published 08/26/2016 | Region of Action- NA |
5818
LI - 2 | Modify and update Table 1, 2-3,3 Flat length | Published 08/26/2016 | Region of Action- NA |
5818
LI - 3 | Implement r-plan direction in Table 1, Table 2 and Table R1-1, Part 2 | Published 08/26/2016 | Region of Action- NA |
| 5916 | Line-iItem Revisions to HB6-0615, Test Method for Measurement of Thickness and Shape of Crystalline Sapphire Wafers by Using Optical Probes | See Line Items Below | Region of Action- NA |
5916
LI - 1 | Addition of the results of an MSA with a double-side polished sapphire wafer in section 16 and in Related Information 1. | Published 03/04/2016 | Region of Action- NA |
5916
LI - 2 | Replace the arrow depicting the diameter of the wafer in Figure 2 by an arrow that depicts the radius. | Published 03/04/2016 | Region of Action- NA |
5916
LI - 3 | Replace in R1-2.1 “site size: 1 by 1 mm” by “site size: 5 by 5 mm”. | Published 03/04/2016 | Region of Action- NA |
| 5945 | New Standard: Test Method for Determining Orientation of A Sapphire Single Crystal | Published as SEMI HB8-0217 02/24/2017 | Region of Action- Other |