| 5016 | Line Item Revision to SEMI HB3-1113, Mechanical Interface Specification for 150 mm HB-LED Load Port | See Line Items Below | Region of Action- NA |
5016
LI - 1 | Correct the title of this Standard from “Mechanical Interface Specification for 150 mm HB-LED Load Port” to “Specification for the Mechanical Interface for 150 mm HB-LED Load Port” | Published 10/28/2016 | Region of Action- NA |
| 5723 | New Standard: Specification for Single Crystal Sapphire Intended for Use for Manufacturing HB- LED Wafers | Failed Technical Review and Returned to TF 04/22/2016 | Region of Action- Other |
| 5723A | New Standard: Specification for Single Crystal Sapphire Intended for Use for Manufacturing HB- LED Wafers | Passed Technical Review - Awaiting Procedural Review 10/14/2016 | Region of Action- Other |
| 5723B | New Standard: Specification for Single Crystal Sapphire Intended for Use for Manufacturing HB- LED Wafers | Failed Technical Review and Returned to TF 12/28/2017 | Region of Action- Other |
| 5723C | New Standard: Specification for Single Crystal Sapphire Intended for Use for Manufacturing HB- LED Wafers | Published as SEMI HB10-1018 10/12/2018 | Region of Action- Other |
| 5775 | New Standard: Specification for Sapphire Single Crystal Ingot Intended for Use for Manufacturing HB-LED Wafers | Failed Technical Review and Returned to TF 04/22/2016 | Region of Action- Other |
| 5775A | New Standard: Specification for Sapphire Single Crystal Ingot Intended for Use for Manufacturing HB-LED Wafers | Passed Technical Review - Awaiting Procedural Review 10/14/2016 | Region of Action- Other |
| 5775B | New Standard: Specification for Sapphire Single Crystal Ingot Intended for Use for Manufacturing HB-LED Wafers | Failed Technical Review and Returned to TF 12/28/2017 | Region of Action- Other |
| 5775C | New Standard: Specification for Sapphire Single Crystal Ingot Intended for Use for Manufacturing HB-LED Wafers | Failed Technical Review and Returned to TF 04/18/2018 | Region of Action- Other |
| 5775D | New Standard: Specification for Sapphire Single Crystal Ingot Intended for Use for Manufacturing HB-LED Wafers | Published as SEMI HB11-0819 08/16/2019 | Region of Action- Other |
| 5776 | New Standard: Test Method for Detecting Surface Defects of GaN based LED Epitaxial Wafer Used for Manufacturing HB-LED | Failed Technical Review and Returned to TF 04/20/2017 | Region of Action- Other |
| 5776A | New Standard: Test Method and Acceptance Criteria for Visual Inspection of Surface Defects of GaN Epitaxial Wafers Used for Manufacturing HB-LED | Passed Technical Review - Awaiting Procedural Review 12/28/2017 | Region of Action- Other |
| 5818 | Line Items Revision to SEMI HB1-XXXX, Specifications for Sapphire Wafers Intended for Use for Manufacturing High Brightness-Light Emitting Diode Devices | See Line Items Below | Region of Action- NA |
5818
LI - 1 | Correct the title of this standard from “Specifications” to “Specification” | Published 08/26/2016 | Region of Action- NA |
5818
LI - 2 | Modify and update Table 1, 2-3,3 Flat length | Published 08/26/2016 | Region of Action- NA |
5818
LI - 3 | Implement r-plan direction in Table 1, Table 2 and Table R1-1, Part 2 | Published 08/26/2016 | Region of Action- NA |
| 5916 | Line-iItem Revisions to HB6-0615, Test Method for Measurement of Thickness and Shape of Crystalline Sapphire Wafers by Using Optical Probes | See Line Items Below | Region of Action- NA |
5916
LI - 1 | Addition of the results of an MSA with a double-side polished sapphire wafer in section 16 and in Related Information 1. | Published 03/04/2016 | Region of Action- NA |
5916
LI - 2 | Replace the arrow depicting the diameter of the wafer in Figure 2 by an arrow that depicts the radius. | Published 03/04/2016 | Region of Action- NA |
5916
LI - 3 | Replace in R1-2.1 “site size: 1 by 1 mm” by “site size: 5 by 5 mm”. | Published 03/04/2016 | Region of Action- NA |
| 5945 | New Standard: Test Method for Determining Orientation of A Sapphire Single Crystal | Published as SEMI HB8-0217 02/24/2017 | Region of Action- Other |
| 6192 | New Standard: Specification for Dry Etching Patterned Sapphire Substrate (DPSS) | Failed Technical Review and Returned to TF 10/24/2018 | Region of Action- Other |
| 6192A | New Standard: Specification for Dry-Etched Patterned Sapphire Substrates (DPSS) | Published as SEMI HB12-1219 12/23/2019 | Region of Action- Other |
| 6370 | New Standard: Specification of Susceptors for HB-LED MOCVD Equipment Communication Interface | Published as SEMI HB13-1219 12/20/2019 | Region of Action- Other |
| 6371 | New Standard: Test Method for Determining Geometrical Parameters of Patterns on Patterned Sapphire Substrate | Failed Technical Review and Returned to TF 03/29/2019 | Region of Action- Other |
| 6371A | New Standard: Test Method for Determining Geometrical Parameters of Patterns on Patterned Sapphire Substrate | Failed Technical Review and Returned to TF 09/27/2019 | Region of Action- Other |
| 6371B | New Standard: Test Method for Determining Geometrical Parameters of Patterns on Patterned Sapphire Substrate | Failed Technical Review and Returned to TF 03/16/2020 | Region of Action- Other |
| 6371C | New Standard: Test Method for Determining Geometrical Parameters of Patterns on Patterned Sapphire Substrate | Published as SEMI HB14-0223 02/17/2023 | Region of Action- Other |
| 6387 | Reapproval of SEMI HB2-0613, Specification For 150 mm Open Plastic and Metal Wafer Cassettes Intended for Use for Manufacturing HB-LED Devices | Published 12/24/2018 | Region of Action- NA |
| 6430 | Reapproval of SEMI HB4-0913, Specification of Communication Interfaces for High Brightness LED Manufacturing Equipment (HB-LED ECI) | Published 04/26/2019 | Region of Action- NA |
| 6502 | Line Item Revision to SEMI HB11-0819, Specification for Sapphire Single Crystal Ingot Intended for Use for Manufacturing HB-LED Wafers | See Line Items Below | Region of Action- Other |
6502
LI - 1 | Change terminology of End Face in section 4.1.1 | Published 01/08/2021 | Region of Action- Other |
| 6589 | Revision to SEMI HB4-0913 (Reapproved 0419), Specification of Communication Interfaces for High Brightness LED Manufacturing Equipment (HB-LED ECI) | Published 01/13/2022 | Region of Action- Other |
| R5723C | New Standard: Specification for Single Crystal Sapphire Intended for Use for Manufacturing HB- LED Wafers | Published as SEMI HB10-1018 10/12/2018 | Region of Action- Other |
| R5775D | New Standard: Specification for Sapphire Single Crystal Ingot Intended for Use for Manufacturing HB-LED Wafers | Published as SEMI HB11-0819 08/16/2019 | Region of Action- Other |
| R5776A | New Standard: Test Method for Detecting Surface Defects of GaN based LED Epitaxial Wafer Used for Manufacturing HB-LED | Published as SEMI HB9-0818 08/24/2018 | Region of Action- Other |
| R6192A | New Standard: Specification for Dry-Etched Patterned Sapphire Substrates (DPSS) | Published as SEMI HB12-1219 12/23/2019 | Region of Action- Other |
| R6370 | New Standard: Specification of Susceptors for HB-LED MOCVD Equipment Communication Interface | Published as SEMI HB13-1219 12/20/2019 | Region of Action- Other |
| R6371C | New Standard: Test Method for Determining Geometrical Parameters of Patterns on Patterned Sapphire Substrate | Published as SEMI HB14-0223 02/17/2023 | Region of Action- Other |
| R6589 | Revision to SEMI HB4-0913 (Reapproved 0419), Specification of Communication Interfaces for High Brightness LED Manufacturing Equipment (HB-LED ECI) | Published 01/13/2022 | Region of Action- Other |