SEMI International Standards
Document Status Report

This page provides a the status of documents being worked on by various Task Forces in the SEMI International Standards program.

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Silicon Wafer

3335DNew Standard: Test Method for Nanotopography of Unpatterned Silicon Wafers for the 130 nm to 22 nm Generations Published as SEMI M78-1110 09/22/2010Region of Action- NA
4497Revision of SEMI M71-0707 - Specification for Silicon-On-Insulator (SOI) Wafers for CMOS LSI 130 nm Technology Generation and BeyondPublished 01/25/2010Region of Action- NA
4583BRevision of SEMI M53, Practice for Calibrating Scanning Surface Inspection Systems Using Certified Depositions of Monodisperse Polystyrene Latex Spheres on Unpatterned Semiconductor Wafer SurfacesPublished 01/26/2009Region of Action- NA
4624BNew Standard: Specification for Developmental 450 mm Diameter Polished Single Crystal Silicon WafersPublished as SEMI M76-0710 05/20/2010Region of Action- NA
4733Line Items Revision of SEMI M59-0309, Terminology for Silicon Technology and the following standards containing terms related to automatic surface inspection: SEMI M40-0200, SEMI M43-0301, SEMI M50-1104, SEMI M53-0706E, SEMI M58-0704, SEMI ME1392-0305, SEMI MF1048-1105, and SEMI MF1811-0704.See Line Items Below Region of Action- NA
4760New Standard: Mechanical Specification for 450 mm Shipping Box Used to Transport and Ship 450 mm WafersFailed Technical Review and Returned to TF 07/13/2010Region of Action- Japan
4760ANew Standard: Mechanical Specification for Front-Opening Shipping Box Used to Transport and Ship 450 mm WafersPublished as SEMI M80-1111 11/11/2011Region of Action- Japan
4766Revision to SEMI M52-0307 with title change to: Guide for Specifying Scanning Surface Inspection Systems for Silicon Wafers from 130 nm Down to 11 nm Technology GenerationsFailed Technical Review and Returned to TF 10/13/2011Region of Action- NA
4766ARevision to SEMI M52-0307 with title change to: Guide for Specifying Scanning Surface Inspection Systems for Silicon Wafers for the 130 nm to 11 nm Technology GenerationsPublished 04/27/2012Region of Action- NA
4790Revision to SEMI MF533-1109, Test Method for Thickness and Thickness Variation of Silicon WafersPublished 01/27/2010Region of Action- NA
4798Revision to SEMI MF1811-1109, Guide for Estimating the Power Spectral Density Function and Related Finish Parameters from Surface Profile DataPublished 01/26/2010Region of Action- NA
4813Revision of SEMI M49-1108, Guide for Specifying Geometry Measurement Systems for Silicon Wafers for the 130 nm to 22 nm Technology GenerationsFailed Technical Review and Returned to TF 07/13/2010Region of Action- NA
4813ARevision to SEMI M49-1108, Guide for Specifying Geometry Measurement Systems for Silicon Wafers for the 130 nm to 22 nm Technology GenerationsPublished 04/08/2011Region of Action- NA
4817Revision of SEMI M59-0310, Terminology for Silicon Technology and the following standards: SEMI M51-0303, SEMI M60-0306, SEMI M66-0706e, SEMI MF1153-1106, SEMI MF1771-0304, and SEMI MF2166-0304Published 10/07/2010Region of Action- NA
4844New Standard: Guide for the Measurement of Trace Metal Contamination on Silicon Wafer Surface by Inductively Coupled Plasma Mass SpectrometryFailed Technical Review and Returned to TF 03/12/2010Region of Action- Japan
4844ANew Standard: Guide for the Measurement of Trace Metal Contamination on Silicon Wafer Surface by Inductively Coupled Plasma Mass SpectrometryFailed Technical Review and Returned to TF 12/02/2010Region of Action- Japan
4844BNew Standard: Guide for the Measurement of Trace Metal Contamination on Silicon Wafer Surface by Inductively Coupled Plasma Mass SpectrometryFailed Technical Review and Returned to TF 12/05/2013Region of Action- Japan
4844CNew Standard: Guide for the Measurement of Trace Metal Contamination on Silicon Wafer Surface by Inductively Coupled Plasma Mass SpectrometryPublished as SEMI M85-1114 11/21/2014Region of Action- Japan
4846New Standard: Test Method for Analyzing Organic Contaminants on Silicon Wafer Surfaces by Thermal Desorption Gas Chromatography Mass SpestrometryFailed Technical Review and Returned to TF 03/12/2010Region of Action- Japan
4846ANew Standard: Test Method for Analyzing Organic Contaminants on Silicon Wafer SurfacesFailed Technical Review and Returned to TF 12/02/2010Region of Action- Japan
4846BNew Standard: Test Method for Analyzing Organic Contaminants on Silicon Wafer SurfacesFailed Technical Review and Returned to TF 12/08/2011Region of Action- Japan
4893Reapproval of SEMI M51-0303, Test Method for Characterizing Silicon Wafer Materials by Gate Oxide IntegrityFailed Technical Review and Returned to TF 03/12/2010Region of Action- Japan
4914Reapproval of SEMI MF1617-0304 Test Method For Measuring Surface Sodium Aluminum Potassium And Iron On Silicon And Epi Substrates By Secondary Ion Mass SpectrometryPublished 05/20/2010Region of Action- NA
4915Reapproval of SEMI MF2166-0304 Test Method for Measuring Nitrogen Concentration in Silicon Substrates by Secondary Ion Mass SpectrometryFailed Technical Review and Returned to TF 03/30/2010Region of Action- NA
4915AReapproval of SEMI MF2139-1103 Test Method for Measuring Nitrogen Concentration in Silicon Substrates by Secondary Ion Mass SpectrometryPublished 09/30/2010Region of Action- NA
4916Withdrawal of SEMI MF399-00a Test Method For Thickness Heteroepitaxial Or Polysilicon LayersPublished 05/14/2010Region of Action- NA
4917Reapproval of SEMI M26-0304, Guide for the Re-use of 100, 125, 150 and 200mm Wafer Shipping Boxes Used to Transport WafersPublished 10/07/2010Region of Action- Japan
4918Reapproval of SEMI M29-1296 (Reapproved 1103), Specification for 300 mm Shipping BoxPublished 10/07/2010Region of Action- Japan
4919Revision to SEMI M45-0703, with title change from: Provisional Specification for 300 mm Wafer Shipping System to: Specification for 300 mm Wafer Shipping SystemPublished 10/07/2010Region of Action- Japan
4920New Standard: Practice for Determining Wafer Near-Edge Geometry Using Roll-Off Amount, ROAPublished as SEMI M77-1110 09/30/2010Region of Action- Other
4927Line Items Revision of SEMI M1-1109, Specifications for Polished Single Crystal Silicon WafersSee Line Items Below Region of Action- NA
4927
LI - 1
Change 2.1 as followsPublished 02/28/2011Region of Action- NA
4927
LI - 2
Add the following after EM-3504 in 3.3 JEITA Standards and modify parts of table 1Published 02/28/2011Region of Action- NA
4927
LI - 3
Removing T1 and T2 Published 02/28/2011Region of Action- NA
4928Line Items Revision of SEMI M59-0310, Terminology for Silicon TechnologySee Line Items Below Region of Action- NA
4928
LI - 1
Change the definition of ingot in SEMI M59-0310 as followsPublished 02/03/2011Region of Action- NA
4928
LI - 2
Add the following definition to 5 of SEMI M59 (in proper alphabetical order)Published 02/03/2011Region of Action- NA
4929Withdrawal of SEMI M47-0707, Specification for Silicon-on-Insulator (SOI) Wafers for CMOS LSI ApplicationsPublished 09/30/2010Region of Action- NA
4932Revision to SEMI M21-0304, Guide For Assigning Addresses To Rectangular Elements In A Cartesian ArrayPublished 09/30/2010Region of Action- NA
4933Revision to SEMI MF1618-0704, Practice For Determination Of Uniformity Of Thin Films On Silicon WafersPublished 09/30/2010Region of Action- NA
4934Revision to SEMI M16-1103, Specification for Polycrystalline SiliconPublished 09/30/2010Region of Action- NA
4935Revision to SEMI M17-0704, Guide For A Universal Wafer GridPublished 09/30/2010Region of Action- NA
4936Revision to SEMI M20-0704, Practice For Establishing A Wafer Coordinate SystemPublished 09/30/2010Region of Action- NA
4937Revision to SEMI MF1389-0704, Test Method For Photoluminescense Analysis Of Single Crystal Silicon For III-V ImpuritiesPublished 09/30/2010Region of Action- NA
4938Revision to SEMI MF1529-0704, Test Method For Sheet Resistance Uniformity Evaluation By In-Line Four-Point Probe With The Dual-Configuration ProcedurePublished 09/30/2010Region of Action- NA
4939Revision to SEMI MF1725-1103, Practice For Analysis Of Crystallographic Perfection Of Silicon IngotsPublished 09/30/2010Region of Action- NA
4940Revision to SEMI MF1726-1103, Practice For Analysis Of Crystallographic Perfection Of Silicon WafersPublished 09/30/2010Region of Action- NA
4941Revision to SEMI MF1727-0304, Practice For Detection Of Oxidation Induced Defects In Polished Silicon WafersPublished 09/30/2010Region of Action- NA
4942Revision to SEMI MF1809-0704, Guide For Selection And Use Of Etching Solutions To Delineate Structural Defects In SiliconPublished 09/30/2010Region of Action- NA
4943Revision to SEMI MF1810-0304, Test Method For Counting Preferentially Etched Or Decorated Surface Defects In Silicon WafersPublished 09/30/2010Region of Action- NA
4944Revision to SEMI MF1982-1103, Test Methods For Analyzing Organic Contaminants On Silicon Wafer Surfaces By Thermal Desorption Gas ChromatographyPublished 09/30/2010Region of Action- NA
4945Withdrawal of SEMI M48-1101, Guide For Evaluating Chemical-Mechanical Polishing Processes On Films On Unpatterned Silicon SubstratesPublished 09/30/2010Region of Action- NA
5029Revision to SEMI M51-0303, with title change from: Test Method for Characterizing Silicon Wafers by Gate Oxide Integrity to: to: Test Method for Time Zero Dielectric Breakdown Characteristics of SiO2 Films for Silicon Wafer EvaluationFailed Technical Review and Returned to TF 12/02/2010Region of Action- Japan
5029ARevision to SEMI M51-0303, with title change from: Test Method for Characterizing Silicon Wafers by Gate Oxide Integrity to: Test Method for Time Zero Dielectric Breakdown Characteristics of SiO2 Films for Silicon Wafer EvaluationFailed Technical Review and Returned to TF 03/01/2011Region of Action- Japan
5029BRevision to SEMI M51-0303, with title change from: Test Method for Characterizing Silicon Wafers by Gate Oxide Integrity to: Test Method for Time Zero Dielectric Breakdown Characteristics of Amorphous SiO2 Films for Silicon Wafer EvaluationDrafting 01/13/2012Region of Action- Japan
5029CRevision to SEMI M51-0303, with title change from: Test Method for Characterizing Silicon Wafers by Gate Oxide Integrity to: Test Method for Time Zero Dielectric Breakdown Characteristics of Amorphous SiO2 Films for Silicon Wafer EvaluationPublished 10/15/2012Region of Action- Japan
5030Revision to SEMI M60-0306, Test Method for Time Dependent Dielectric Breakdown Characteristics of SiO2 Films for Si Wafer Evaluation with title change to Test Method for Time Dependent Dielectric Breakdown Characteristics of Amorphous SiO2 Films for Silicon Wafer EvaluationPublished 11/21/2013Region of Action- Japan
5034Revision of SEMI M71-0310, Specification for Silicon-on-Insulator (SOI) Wafers for CMOS LSIFailed Technical Review and Returned to TF 12/09/2011Region of Action- NA
5034ARevision of SEMI M71-0310, Specification for Silicon-on-Insulator (SOI) Wafers for CMOS LSIPublished 09/19/2012Region of Action- NA
5035Line Items Revision to M62-0309 Specifications for Silicon Epitaxial WafersSee Line Items Below Region of Action- NA
5035
LI - 1
Add Table R2-8 Guide for the Specification of 22 nm Design Rule Epitaxial Wafers with DSP SubstratesFailed Technical Review and Returned to TF 12/02/2010Region of Action- NA
5035ALine Item Revision to M62-0309, Specifications for Silicon Epitaxial WafersSee Line Items Below Region of Action- NA
5035A
LI - 1
Add Table R2-8 Guide for the Specification of 22 nm Design Rule Epitaxial Wafers with DSP SubstratesPublished 12/02/2011Region of Action- NA
5036Withdrawal of SEMI M34-0299 Guide for Specifying SIMOX WafersPublished 02/28/2011Region of Action- NA
5037Reapproval of SEMI M44-0305 Guide For Measurement Of Interstitial Oxygen In SiliconPublished 02/03/2011Region of Action- NA
5038Reapproval of SEMI MF26-0305 Test Method For Determining The Orientation Of A Semiconductive Single CrystalPublished 02/03/2011Region of Action- NA
5039Reapproval of SEMI MF928-0305 Test Method For Edge Contour Of Circular Semiconductor Wafers And Rigid Disk SubstratesPublished 02/03/2011Region of Action- NA
5040Reapproval of SEMI MF1152-0305 Test Method For Dimensional NotchesPublished 02/03/2011Region of Action- NA
5041Reapproval of SEMI MF1239-0305 Test Method For Oxygen Precipitation Characteristics Of Silicon Wafers By Measurement Of Interstitial Oxygen ReductionPublished 02/03/2011Region of Action- NA
5042Reapproval of SEMI MF951-0305 Test Method For Determination Of Radial Interstitial Oxygen Variation In Silicon WafersPublished 02/03/2011Region of Action- NA
5043Revision of SEMI MF1048-1109, Test Method for Measuring Reflective Total Integrated ScatterFailed Technical Review and Returned to TF 03/29/2011Region of Action- NA
5043ARevision of SEMI MF1048-1109, Test Method for Measuring Reflective Total Integrated ScatterPublished 11/14/2011Region of Action- NA
5069ANew Standard: Specification for 450 mm Wafer Shipping SystemFailed Technical Review and Returned to TF 04/02/2014Region of Action- Japan
5070Revision of SEMI M76-0710, Specification for Developmental 450 mm Diameter Polished Single Crystal Silicon WafersFailed Technical Review and Returned to TF 07/12/2011Region of Action- Other
5081Reapproval of SEMI MF42-1105, Test Methods for Conductivity Type of Extrinsic Semiconducting MaterialsPublished 06/24/2011Region of Action- NA
5082Reapproval of SEMI MF43-0705, Test Methods for Resistivity of Semiconductor MaterialsPublished 06/24/2011Region of Action- NA
5083Reapproval of SEMI MF81-1105, Test Method for Measuring Radial Resistivity Variation on Silicon WafersPublished 06/24/2011Region of Action- NA
5084Reapproval of SEMI MF154-1105, Guide for Identification of Structures and Contaminants Seen on Specular Silicon SurfacesPublished 06/24/2011Region of Action- NA
5085Reapproval of SEMI MF374-0307 - Test Method for Sheet Resistance of Silicon Epitaxial, Diffused, Polysilicon, and Ion-implanted Layers Using an In-Line Four-Point Probe with the Single-Configuration Procedure Drafting 10/12/2011Region of Action- NA
5085Revision of SEMI MF374-0307, Test Method for Sheet Resistance of Silicon Epitaxial, Diffused, Polysilicon, and Ion-implanted Layers Using an In-Line Four-Point Probe with the Single-Configuration Procedure Published 03/22/2012Region of Action- NA
5086Reapproval of SEMI MF525-0307 - Test Method for Measuring Resistivity of Silicon Wafers Using a Spreading Resistance Probe Drafting 10/12/2011Region of Action- NA
5086Revision of SEMI MF525-0307, Test Method for Measuring Resistivity of Silicon Wafers Using a Spreading Resistance Probe Published 03/22/2012Region of Action- NA
5087Reapproval of SEMI MF673-1105, Test Method for Measuring Resistivity of Semiconductor Wafers or Sheet Resistance of Semiconductor Films with a Noncontact Eddy-Current GaugePublished 07/01/2011Region of Action- NA
5088Reapproval of SEMI MF674-0705, Practice for Preparing Silicon for Spreading Resistance MeasurementsPublished 06/24/2011Region of Action- NA
5089Reapproval of SEMI MF847-0705, Test Method for Measuring Crystallographic Orientation of Flats on Single Crystal Silicon Wafers by X-Ray TechniquesPublished 06/24/2011Region of Action- NA
5090Revision of SEMI M1-0611, Specifications for Polished Single Crystal Silicon WafersPublished 11/14/2011Region of Action- NA
5133Line Items Revision of SEMI M1-0211, Specifications for Polished Single Crystal Silicon WafersSee Line Items Below Region of Action- NA
5133
LI - 1
Change reference to M77 and modify appropriate wordingPublished 06/17/2011Region of Action- NA
5133
LI - 2
Change reference of SOI WafersPublished 06/17/2011Region of Action- NA
5161Reapproval of SEMI MF1763-0706, Test Methods for Measuring Contrast of a Linear PolarizerPublished 11/14/2011Region of Action- NA
5162Reapproval of SEMI MF397-1106, Test Method for Resistivity of Silicon Bars Using a Two-Point ProbePublished 11/14/2011Region of Action- NA
5163Reapproval of SEMI MF576-0706, Test Method for Measurement of Insulator Thickness and Refractive Index on Silicon Substrates by EllipsometryPublished 11/14/2011Region of Action- NA
5164Reapproval of SEMI MF728-1106, Practice for Preparing an Optical Microscope for Dimensional MeasurementsPublished 11/14/2011Region of Action- NA
5165Reapproval of SEMI MF978-1106, Test Method for Characterizing Semiconductor Deep Levels by Transient Capacitance TechniquesPublished 11/14/2011Region of Action- NA
5166Revision of SEMI M57-0704, Guide for Specifying Silicon Annealed WafersPublished 10/27/2011Region of Action- NA
5167Line Item Revision to SEMI M49-0311, Guide for Specifying Geometry Measurement Systems for Silicon Wafers for the 130-nm to 22-nm Technology GenerationsSee Line Items Below Region of Action- NA
5167
LI - 1
Correct the ZDD values in table 4 in the roll-off region to NEGATIVE as shownPublished 10/25/2011Region of Action- NA
5251Line Item Revision to SEMI M1-1111, Specifications for Polished Single Crystal Silicon WafersSee Line Items Below Region of Action- NA
5251
LI - 1
Addition of Node-Specific GuidesPublished 08/17/2012Region of Action- NA
5252Revision of SEMI M57-1011, with title change to: Specifications for Silicon Annealed WafersFailed Technical Review and Returned to TF 07/11/2012Region of Action- NA
5252ARevision of SEMI M57-1011 with Title Change To: Specifications for Silicon Annealed WafersPublished 04/26/2013Region of Action- NA
5253Revision of SEMI M49-0311, Guide for Specifying Geometry Measurement Systems for Silicon Wafers for the 130 nm to 22 nm Technology Generations Failed Technical Review and Returned to TF 10/13/2011Region of Action- NA
5253ARevision of SEMI M49-0311, Guide for Specifying Geometry Measurement Systems for Silicon Wafers for the 130 nm to 22 nm Technology GenerationsPublished 04/13/2012Region of Action- NA
5300Revision of SEMI M8-0307, Specification for Polished Monocrystalline Silicon Test Wafers Published 03/30/2012Region of Action- NA
5301Reapproval of SEMI M32-0307, Guide to Statistical Specifications Published 05/14/2012Region of Action- NA
5302Revision of SEMI M38-0307, Specification for Polished Reclaimed Silicon Wafers Published 03/30/2012Region of Action- NA
5303Reapproval of SEMI M56-0307, Practice for Determining Cost Components for Metrology Equipment Due to Measurement Variability and Bias Published 05/14/2012Region of Action- NA
5304Revision of SEMI MF84-0307, Test Method for Measuring Resistivity of Silicon Wafers With an In-Line Four-Point ProbePublished 03/30/2012Region of Action- NA
5305Revision of SEMI MF671-0707, Test Method for Measuring Flat Length on Wafers of Silicon and Other Electronic MaterialsPublished 03/30/2012Region of Action- NA
5306Revision of SEMI MF672-0307, Guide for Measuring Resistivity Profiles Perpendicular to the Surface of a Silicon Wafer Using a Spreading Resistance ProbePublished 04/13/2012Region of Action- NA
5307Reapproval of SEMI MF723-0307E, Practice for Conversion Between Resistivity and Dopant or Carrier Density for Boron-Doped, Phosphorous-Doped, and Arsenic-Doped SiliconPublished 04/13/2012Region of Action- NA
5308Reapproval of SEMI MF1388-0707, Test Method for Generation Lifetime and Generation Velocity of Silicon Material by Capacitance-Time Measurements of Metal-Oxide-Silicon (MOS) CapacitorsPublished 04/13/2012Region of Action- NA
5309Reapproval of SEMI MF1390-0707, Test Method for Measuring Warp on Silicon Wafers by Automated Non-Contact ScanningPublished 05/14/2012Region of Action- NA
5310Reapproval of SEMI MF1392-0307, Test Method for Determining Net Carrier Density Profiles in Silicon Wafers by Capacitance-Voltage Measurements with a Mercury ProbePublished 05/14/2012Region of Action- NA
5311Reapproval of SEMI MF1451-0707, Test Method for Measuring Sori on Silicon Wafers by Automated Non-Contact ScanningPublished 05/14/2012Region of Action- NA
5312Revision of SEMI MF1527-0307, Guide for Application of Certified Reference Materials and Reference Wafers for Calibration and Control of Instruments for Measuring Resistivity of SiliconPublished 04/13/2012Region of Action- NA
5313Reapproval of SEMI MF1535-0707, Test Method for Carrier Recombination Lifetime in Silicon Wafers by Noncontact Measurement of Photoconductivity Decay by Microwave Reflectance Failed Technical Review and Returned to TF 10/25/2011Region of Action- NA
5313ARevision of SEMI MF1535-0707 Test Method for Carrier Recombination Lifetime in Silicon Wafers by Noncontact Measurement of Photoconductivity Decay by Microwave Reflectance Failed Technical Review and Returned to TF 07/10/2012Region of Action- NA
5313ARevision of SEMI MF1535-0707 Test Method for Carrier Recombination Lifetime in Silicon Wafers by Noncontact Measurement of Photoconductivity Decay by Microwave Reflectance Failed Technical Review and Returned to TF 07/10/2012Region of Action- NA
5313ARevision of SEMI MF1535-0707 Test Method for Carrier Recombination Lifetime in Silicon Wafers by Noncontact Measurement of Photoconductivity Decay by Microwave Reflectance Failed Technical Review and Returned to TF 07/10/2012Region of Action- NA
5313BLine Item Revisions of SEMI MF1535-0707, Test Method for Carrier Recombination Lifetime in Silicon Wafers by Noncontact Measurement of Photoconductivity Decay by Microwave Reflectance See Line Items Below Region of Action- NA
5313BLine Item Revisions of SEMI MF1535-0707 Test Method for Carrier Recombination Lifetime in Silicon Wafers by Noncontact Measurement of Photoconductivity Decay by Microwave ReflectanceDrafting 10/12/2012Region of Action- NA
5313B
LI - 1
Changes to 1.3DRAFTING 10/12/2012Region of Action- NA
5313B
LI - 2
Renumbering of certain paragraphs and notes in 2 Scope, and correction to Note 1DRAFTING 10/12/2012Region of Action- NA
5313B
LI - 3
Addition of 3.8 and reference 7DRAFTING 10/12/2012Region of Action- NA
5313B
LI - 4
Corrections in 4.1, 5.1, 6.1.2, 6.1.3, 6.4, 7.2, 8.4, 11.3.2, and 13.1.6, Footnote 9, and the caption of Figure 3, and addition of reference 16 in 14DRAFTING 10/12/2012Region of Action- NA
5313B
LI - 5
Changes to Appendix 1DRAFTING 10/12/2012Region of Action- NA
5313B
LI - 6
Changes to Related Information 1DRAFTING 10/12/2012Region of Action- NA
5313B
LI - 7
Changes to Related Information 2DRAFTING 10/12/2012Region of Action- NA
5313B
LI - 8
Changes to Related Information 3DRAFTING 10/12/2012Region of Action- NA
5313CRevision of SEMI MF1535-0707 Test Method for Carrier Recombination Lifetime in Silicon Wafers by Noncontact Measurement of Photoconductivity Decay by Microwave Reflectance Drafting 11/06/2014Region of Action- NA
5314Reapproval of SEMI MF1569-0307, Guide for Generation of Consensus Reference Materials for Semiconductor TechnologyPublished 05/14/2012Region of Action- NA
5315Reapproval SEMI MF1530-0707, Test Method for Measuring Flatness, Thickness, and Total Thickness Variation on Silicon Wafers by Automated Non-Contact ScanningPublished 05/14/2012Region of Action- NA
5321Revision to SEMI M24-0307, Specification for Polished Monocrystalline Silicon Premium WafersSee Line Items Below Region of Action- Japan
5321
LI - 1
Update of Referenced Standards and DocumentsPublished 07/03/2012Region of Action- Japan
5322Revision to SEMI M61-0307, Specification for Silicon Epitaxial Wafers with Buried LayersSee Line Items Below Region of Action- Japan
5322
LI - 1
Update of Referenced Standards and DocumentsPublished 07/03/2012Region of Action- Japan
5322
LI - 2
Numbering Correction in Table 1Published 07/03/2012Region of Action- Japan
5322
LI - 3
Update in 10 “Product Labeling”Published 07/03/2012Region of Action- Japan
5342Line Item Revision to SEMI M62-1111, Specifications for Silicon Epitaxial WafersSee Line Items Below Region of Action- NA
5342
LI - 1
Update in 11 “Product Labeling”Published 07/31/2012Region of Action- NA
5342
LI - 2
Revision of Table R2-7 to delete the statement related to 200 mm wafersFailed Technical Review and Returned to TF 04/03/2012Region of Action- NA
5343Revision to M49-0412, Guide for Specifying Geometry Measurement Systems for Silicon Wafers for the 130 nm to 22 nm Technology Generations (Re:To Include Edge Profile Metrics)Published 09/19/2012Region of Action- Europe
5375Line Item Revisions to SEMI M80-1111, Mechanical Specification for Front-Opening Shipping Box Used to Transport and Ship 450 mm WafersSee Line Items Below Region of Action- Japan
5375
LI - 1
Text edits to clarify descriptions and to match existing figuresPublished 08/17/2012Region of Action- Japan
5375
LI - 2
Modify shape of Carrier Frame Pin Hole to address tolerance conflicts between pin hole and load port pin diametersPublished 08/17/2012Region of Action- Japan
5375
LI - 3
Enhance the text description of the bounds of the COG volume to match the Figure 6Published 08/17/2012Region of Action- Japan
5375
LI - 4
Minor correctionsPublished 08/17/2012Region of Action- Japan
5375
LI - 5
Error corrections in FiguresPublished 08/17/2012Region of Action- Japan
5375
LI - 6
Ensure precision & unit of specification in FiguresPublished 08/17/2012Region of Action- Japan
5376Line Items Revision of SEMI M1-1111, Specifications for Polished Single Crystal Silicon WafersSee Line Items Below Region of Action- NA
5376
LI - 1
Changes to sections 3.5, 9, 13, table 1, and related information 2Published 08/17/2012Region of Action- NA
5376
LI - 2
Change to section 3.4Published 08/17/2012Region of Action- NA
5377Revision of SEMI MF397-1106 (Reapproved 1111), Test Method for Resistivity of Silicon Bars Using a Two-Point ProbePublished 08/09/2012Region of Action- NA
5378Revision of SEMI MF576-0706 (Reapproved 1111), Test Method for Measurement of Insulator Thickness and Refractive Index on Silicon Substrates by Ellipsometry Published 08/09/2012Region of Action- NA
5380Withdrawal of SEMI M6-1108, Specification for Silicon Wafers for Use as Photovoltaic Solar CellsPublished 07/20/2012Region of Action- NA
5389Revision to MF1982-1110, Test Method for Analyzing Organic Contaminants on Silicon Wafer Surfaces by Thermal Desorption Gas ChromatographyFailed Technical Review and Returned to TF 12/06/2012Region of Action- Japan
5389ARevision to MF1982-1110, Test Methods for Analyzing Organic Contaminants on Silicon Wafer Surfaces by Thermal Desorption Gas ChromatographyPublished 07/31/2014Region of Action- Japan
5392Revision to M52-0412, Guide for Specifying Scanning Surface Inspection Systems for Silicon Wafers for the 130 nm to 11 nm Technology Generations (Re: Wafer Carrier term and Shape Range Clarification) Published 09/28/2012Region of Action- NA
5393Revision to SEMI M49-0412, Guide for Specifying Geometry Measurement Systems for Silicon Wafers for the 130 nm to 22 nm Technology Generations (Re: Wafer Carrier term and Shape Range Clarification) Published 09/19/2012Region of Action- NA
5393Line Item Revision to SEMI M49-0412, Guide For Specifying Geometry Measurement Systems For Silicon Wafers For The 130 Nm To 22 Nm Technology Generations (Re: Wafer Carrier and Shape Range) Drafting 04/13/2012Region of Action- NA
5395Reapproval of SEMI MF110-1107 Test Method for Thickness of Epitaxial or Diffused Layers in Silicon by the Angle Lapping and Staining Technique Published 09/26/2012Region of Action- NA
5396Reapproval of SEMI MF1188-1107 Test Method for Interstitial Oxygen Content of Silicon by Infrared Absorption With Short Baseline Published 09/25/2012Region of Action- NA
5397Reapproval of SEMI MF1391-1107 Test Method for Substitutional Atomic Carbon Content of Silicon by Infrared Absorption Published 09/25/2012Region of Action- NA
5398Reapproval of SEMI MF1619-1107 Test Method for Measurement of Interstitial Oxygen Content of Silicon Wafers by Infrared Absorption Spectroscopy with p-Polarized Radiation Incident at the Brewster AnglePublished 09/25/2012Region of Action- NA
5399Reapproval of SEMI MF1630-1107 Test Method for Low Temperature FT-IR Analysis of Single Crystal Silicon for III-V Impurities Published 09/25/2012Region of Action- NA
5400Revision of SEMI MF2074-0707 Guide for Measuring Diameter of Silicon and Other Semiconductor WafersPublished 09/19/2012Region of Action- NA
5401Reapproval of SEMI MF28-0707 Test Methods for Minority Carrier Lifetime in Bulk Germanium and Silicon by Measurement of Photoconductivity Decay Published 09/25/2012Region of Action- NA
5402Reapproval of SEMI MF523-1107 Practice for Unaided Visual Inspection of Polished Silicon Wafer Surfaces Published 10/15/2012Region of Action- NA
5403Withdrawal of SEMI MF534-0707, Test Method for Bow of Silicon Wafers Passed Technical Review - Awaiting Procedural Review 10/08/2014Region of Action- NA
5404Withdrawal of SEMI MF657-0707E, Test Method for Measuring Warp and Total Thickness Variation on Silicon Wafers by Noncontact Scanning Published 09/30/2014Region of Action- NA
5405Reapproval of SEMI MF95-1107 Test Method for Thickness of Lightly Doped Silicon Epitaxial Layers on Heavily Doped Silicon Substrates Using an Infrared Dispersive Spectrophotometer Published 10/15/2012Region of Action- NA
5406Reapproval of SEMI MF950-1107 Test Method for Measuring the Depth of Crystal Damage of a Mechanically Worked Silicon Wafer Surface by Angle Polished and Defect Etching Published 09/26/2012Region of Action- NA
5408Revision to SEMI M18-1107 Guide for Developing Specification Forms for Order Entry of Silicon WafersPublished 09/28/2012Region of Action- NA
5424Line Items Revision to SEMI M62-1111, Specifications for Silicon Epitaxial WafersSee Line Items Below Region of Action- NA
5424
LI - 1
Revision of Table R2-7 to delete 200 mm wafer size from 32 nm Design Rule, and deletion of 200mm wafer related statements from Table R2-7. The 200mm wafer size does not make sense anymore for this design rule. Published 06/26/2012Region of Action- NA
5424
LI - 2
Revision of Table R2-8 to include 450mm wafer size for 22nm Design Rule, and addition of 450mm wafer related statements in Table R2-8. Add SEMI T7 in reference section 3.1.Published 06/26/2012Region of Action- NA
5424
LI - 3
Change “As agreed between supplier and customer” to “Customer Specified” in all instances in Table R2-7 and Table R2-8Failed Technical Review and Returned to TF 07/10/2012Region of Action- NA
5424ALine Items Revision to SEMI M62-0912, Specifications for Silicon Epitaxial WafersSee Line Items Below Region of Action- NA
5424A
LI - 1
Revision of Tables R2-7 & R2-8 - Change 3-1.7Publication Process Started 02/06/2013Region of Action- NA
5424A
LI - 2
Revision of Tables R2-7 & R2-8 - Change 3-2.7 and explanation #9Failed Technical Review and Returned to TF 12/06/2012Region of Action- NA
5430Revision to SEMI M73-0309, Test Methods for Extracting Relevant Characteristics from Measured Wafer Edge Profiles Failed Technical Review and Returned to TF 10/11/2012Region of Action- Europe
5430ARevision to SEMI M73-0309, Test Methods for Extracting Relevant Characteristics from Measured Wafer Edge Profiles Published 10/17/2013Region of Action- Europe
5441Line Items Revision of SEMI M1-0812, Specifications for Polished Single Crystal Silicon WafersSee Line Items Below Region of Action- NA
5441
LI - 1
This line item includes all changes in Section 2.6 of Table 1 (including addition of two new footnotes), in 6.6 through 6.6.3.4 including rearrangement of Tables 3 through 11, and in R4-7.5 as well as removal of Appendix 3 and addition of Related Information 2.Publication Process Started 02/06/2013Region of Action- NA
5441
LI - 2
This line item includes only removal of 7Publication Process Started 02/06/2013Region of Action- NA
5441
LI - 3
This line item includes all other changes in the document. (See 2.1, 3.1, R3-3.1, R4-7.6 (Note 1), R4-7.7 (including removal of Note 6), and Footnote 3; A1-1, A2-1, A2-2, A3-1, R3-1, and R4-1.)Publication Process Started 02/06/2013Region of Action- NA
5442Reapproval of SEMI M74-1108, Specification for 450 mm Diameter Mechanical Handling Polished WafersPublished 04/26/2013Region of Action- NA
5448Revision of SEMI MF1528-0308, Test Method for Measuring Boron Contamination in Heavily Doped N-Type Silicon Substrates by Secondary Ion Mass SpectrometryPublished 04/19/2013Region of Action- NA
5449Reapproval of SEMI MF1049-0308, Practice for Shallow Etch Pit Detection on Silicon WafersPublished 04/19/2013Region of Action- NA
5450Revision to SEMI M49-0912, Guide for Specifying Geometry Measurement Systems for Silicon Wafers for the 130 nm to 22 nm Technology Generations with Title Change to: Guide for Specifying Geometry Measurement Systems for Silicon Wafers for the 130 nm to 16 nm Technology GenerationsFailed Technical Review and Returned to TF 12/06/2012Region of Action- Japan
5450ARevision to SEMI M49-0912, Guide for Specifying Geometry Measurement Systems for Silicon Wafers for the 130 nm to 22 nm Technology Generations with Title Change to: Guide for Specifying Geometry Measurement Systems for Silicon Wafers for the 130 nm to 16 nm Technology GenerationsPublished 06/12/2013Region of Action- Japan
5451Reapproval of SEMI MF1366-0308, Test Method for Measuring Oxygen Concentration in Heavily Doped Silicon Substrates by Secondary Ion Mass SpectrometryPublished 04/19/2013Region of Action- NA
5500New Standard: Specifications for Polished Single Crystal Silicon Wafers for Gallium Nitride-On-Silicon ApplicationsPublished as SEMI M84-0414 04/18/2014Region of Action- Europe
5503Line Items Revision to SEMI M52-0912, Guide for Specifying Scanning Surface Inspection Systems for Silicon Wafers for the 130 nm to 11 nm Technology GenerationsSee Line Items Below Region of Action- NA
5503
LI - 1
Add SEMI M80 in section 3.1 SEMI Standards and Safety Guidelines and Table 1, line 1.7 in the References column.Published 02/14/2014Region of Action- NA
5503
LI - 2
Modify Line 1.13 in Table 1 as shownPublished 02/14/2014Region of Action- NA
5539Revision to SEMI MF1390-0707 (Reapproved 0512) With Title Change To: Test Method for Measuring Bow and Warp on Silicon Wafers by Automated NonContact ScanningPublished 10/30/2014Region of Action- NA
5541Revision of SEMI M41-0707, Specification of Silicon-on-Insulator (SOI) for Power Device/ICsPublished 12/20/2013Region of Action- Japan
5542Line Items Revision to SEMI M62-0413, Specifications for Silicon Epitaxial WafersSee Line Items Below Region of Action- NA
5542
LI - 1
Table R2-7: 1) Add missing Diameter for 2-6.1, and 2) Change Nanotopography value for 3-2.7. Remove “Or As agreed between supplier and customer” and change related explanation #9Published 05/30/2014Region of Action- NA
5542
LI - 2
Table R2-8: 1)Add substrate category in 2-6, 2) Add missing diameter for 2-6.1, and 3) Change Nanotopography value for 3-2.7. Remove “Or As agreed between supplier and customer” and change related explanation #9Published 05/30/2014Region of Action- NA
5543Line Item Revisions to SEMI M1-0413, Specifications for Polished Single Crystal Silicon WafersSee Line Items Below Region of Action- NA
5543
LI - 1
Correct the nanotopography entriesPublished 10/17/2013Region of Action- NA
5543
LI - 2
Removal of apex length as an allowable specification for parameter-based edge profilesPublished 10/17/2013Region of Action- NA
5543
LI - 3
Removal of Related Information 2 and all references theretoPublished 10/17/2013Region of Action- NA
5543
LI - 4
Addition of reference to SEMI PV13 as a method for the measurement of carrier recombination lifetime and bulk iron contentPublished 10/17/2013Region of Action- NA
5558Revision of SEMI MF928-0305 (Reapproved 0211), Test Methods for Edge Contour of Circular Wafers and Rigid Disk SubstratesPublished 03/28/2014Region of Action- NA
5559New Auxiliary Information: Interlaboratory Evaluation of Nondestructive Method for Measuring the Edge Contour of Silicon WafersAuxiliary Information Published 08/09/2013Region of Action- NA
5583Line Items Revision to SEMI M57-0413, Specifications for Silicon Annealed WafersSee Line Items Below Region of Action- NA
5583
LI - 1
Table R1-1, Line 2-6.1 Column for 32 nm Technology Generation: Delete superscript #4 Published 04/25/2014Region of Action- NA
5583
LI - 2
Table R1-2, Line 2-6.1 Column for 22 nm Technology Generation: Delete superscript #4 and related note.Published 04/25/2014Region of Action- NA
5604Line Item Revision to SEMI M1-0114, Specification for Polished Single Crystal Silicon Wafer and SEMI M20-0110, Practice for Establishing a Wafer Coordinate SystemSee Line Items Below Region of Action- NA
5604
LI - 1
Revise both SEMI M1 and SEMI M20 to add a notchless category of 450 mm diameter wafersPassed Technical Review - Awaiting Procedural Review 07/08/2014Region of Action- NA
5605Line Item Revision to SEMI M1-1013, Specifications for Polished Single Crystal Silicon Wafers (Subj:Flatness/SFQR change for 16nm technology generation)See Line Items Below Region of Action- NA
5605
LI - 1
Change Row 2-6 and footnote 6 of Table R1-1 Published 04/11/2014Region of Action- NA
5606New Auxiliary Information: Interlaboratory Evaluation of Method 1 of SEMI MF673, Test Method for Measuring Resistivity of Semiconductor Slices of Sheet Resistance of Semiconductor Films with a Noncontact Eddy-Current Gage.Auxiliary Information Published 02/10/2014Region of Action- NA
5607Line Items Revision of SEMI MF673-0305 (Reapproved 0611), Test Methods for Measuring Resistivity of Semiconductor Wafers or Sheet Resistance of Semiconductor Films with a Noncontact Eddy-Current GaugeSee Line Items Below Region of Action- NA
5607
LI - 1
To change the citation in the standard to this document and correct the precision section so that it correctly reflects the results of the interlaboratory test. These changes are shown with turquoise highlight.Published 10/17/2014Region of Action- NA
5607
LI - 2
Several typographical errors were observed while reviewing the text. This line item of the ballot corrects these errors. These corrections are shown with bright green highlight.Published 10/17/2014Region of Action- NA
5651Line Item Revision of SEMI M80-0812, Mechanical Specification for Front-Opening Shipping Box Used to Transport and Ship 450 mm WafersSee Line Items Below Region of Action- Other
5651
LI - 1
Correct the Formula of Paragraph A3-1.6 in Appendix 3 (Method for Measuring Carrier Center of Gravity) of SEMI M80-0812Published 05/30/2014Region of Action- Other
5653Line Item Revision of SEMI M1-1013, Specifications for Polished Single Crystal Silicon Wafers (Subj: To correct errors from previous ballot)See Line Items Below Region of Action- NA
5653
LI - 1
Change 6.6.3.2 and the last sentence in 6.6.3.2.2.1 Published 04/11/2014Region of Action- NA
5654Line Item Revision to SEMI M49-0613, Guide for Specifying Geometry Measurement Systems for Silicon Wafers for the 130 nm to 16 nm Technology GenerationsSee Line Items Below Region of Action- NA
5654
LI - 1
Modify Table 4 in order to reflect the 450 mm diameter wafers, 1.5 mm Edge Exclusion specification, for 16 nm technology node as shown.Published 10/17/2014Region of Action- NA
5655Line Item Revision to SEMI M1-0114, Specifications for Polished Single Crystal Silicon WafersSee Line Items Below Region of Action- NA
5662Revision of SEMI M35-1107, Guide for Developing Specifications for Silicon Wafer Surface Features Detected by Automated InspectionPublished 11/21/2014Region of Action- NA
5663Reapproval of SEMI M58-1109, Test Method for Evaluating DMA Based Particle Deposition Systems and ProcessesPublished 06/27/2014Region of Action- NA
5664Line Item Revision to SEMI M59-0211, Terminology for Silicon TechnologySee Line Items Below Region of Action- NA
5664
LI - 1
Remove the definitions for 1/e lifetime (e) and primary mode lifetime (t1) from SEMI M59 and decrement paragraph numbers accordingly.Published 10/17/2014Region of Action- NA
5664
LI - 2
Correct the definition for recombination lifetime as shownPublished 10/17/2014Region of Action- NA
5665Line Item Revision of SEMI MF26-0305 (Reapproved 0211), Test Method for Determining the Orientation of a Semiconductive Single CrystalSee Line Items Below Region of Action- NA
5665
LI - 1
Delete Note 1 and correct Equations 8 and 9 as shown.Published 07/31/2014Region of Action- NA
5666Revision of SEMI MF928-0314, Test Methods for Edge Contour of Circular Semiconductor Wafers and Rigid Disk SubstratesPublished 10/30/2014Region of Action- NA
5687Line Item Revision of SEMI M60-1113, Test Method for Time Dependent Dielectric Breakdown Characteristics of Amorphous SiO2 Films for Silicon Wafer EvaluationSee Line Items Below Region of Action- Japan
5687
LI - 1
Correct the sentence in Section 7 Summary of MethodPublished 10/30/2014Region of Action- Japan
5701Line Item Revision of SEMI M1-0414, Specifications for Polished Single Crystal Silicon Wafers (Subj: To correct references to test methods for measurement of front surface chemistry)See Line Items Below Region of Action- NA
5701
LI - 1
Modify 3, Table 1, Table R1-1, and R3-8.1 of SEMI M1, as needed, to remove reference to SEMI M33 and SEMI E45 and add reference to ISO 14706 and ISO 17731 in order to update and correct references to the test methods for surface chemistry of polished electronic grade silicon wafers. Published 10/17/2014Region of Action- NA
5702Line Item Revision to M68-1109, Practice for Determining Wafer Near-Edge Geometry from a Measured Height Data Array using a Curvature Metric, ZDDSee Line Items Below Region of Action- NA
5702
LI - 1
Modify appropriate sections as highlightedPassed Technical Review - Awaiting Procedural Review 10/08/2014Region of Action- NA
5707Revision of SEMI M40-1109 With Title Change To: Guide for Measurement of Roughness of Planar Surfaces on Polished WafersPublished 11/25/2014Region of Action- NA
5736Line Item Revision to M41-1213 Specification of Silicon-on-Insulator (SOI) for Power Device/ICsSee Line Items Below Region of Action- Japan
5736
LI - 1
Revise SEMI M41 to add transferring items from JEITA EM-3604ADRAFTING 10/14/2014Region of Action- Japan
5742Line Item Revision to M62-0514, Specifications for Silicon Epitaxial WafersSee Line Items Below Region of Action- NA
5742
LI - 1
Include 16nm Technology Node (Table R2-9) and few other related changesDrafting 10/14/2014Region of Action- NA
5743Line Item Revision to SEMI M1-1014, Specifications for Polished Single Crystal Silicon WafersSee Line Items Below Region of Action- NA
5743
LI - 1
Revise SEMI M1 to remove category 1.15 wafers of 300 mm diameterDrafting 10/17/2014Region of Action- NA
5771Revision to SEMI M80-0514, Mechanical Specification for Front-Opening Shipping Box used to Transport and Ship 450 mm Wafers with Title Change to Specification for Front-Opening Shipping Box used to Transport and Ship 450mm WafersDrafting 10/21/2014Region of Action- Japan