| 5306 | Revision of SEMI MF672-0307, Guide for Measuring Resistivity Profiles Perpendicular to the Surface of a Silicon Wafer Using a Spreading Resistance Probe | Published 04/13/2012 | Region of Action- NA |
5424A
LI - 1 | Revision of Tables R2-7 & R2-8 - Change ¶3-1.7 | Publication Process Started 02/06/2013 | Region of Action- NA |
| 5441 | Line Items Revision of SEMI M1-0812, Specifications for Polished Single Crystal Silicon Wafers | See Line Items Below | Region of Action- NA |
5441
LI - 1 | This line item includes all changes in Section 2.6 of Table 1 (including addition of two new footnotes), in ¶¶ 6.6 through 6.6.3.4 including rearrangement of Tables 3 through 11, and in ¶ R4-7.5 as well as removal of Appendix 3 and addition of Related Information 2. | Published 04/19/2013 | Region of Action- NA |
5441
LI - 2 | This line item includes only removal of § 7 | Published 04/19/2013 | Region of Action- NA |
5441
LI - 3 | This line item includes all other changes in the document. (See ¶¶ 2.1, 3.1, R3-3.1, R4-7.6 (Note 1), R4-7.7 (including removal of Note 6), and Footnote 3; §§ A1-1, A2-1, A2-2, A3-1, R3-1, and R4-1.) | Published 04/19/2013 | Region of Action- NA |
| 5737 | Revision of SEMI MF1391-1107 (Reapproved 0912), Test Method for Substitutional Atomic Carbon Content of Silicon by Infrared Absorption | Failed Technical Review and Returned to TF 10/07/2015 | Region of Action- Japan |
| 5737A | Revision of SEMI MF1391-1107, Test Method for Substitutional Atomic Carbon Content of Silicon by Infrared Absorption | Failed Technical Review and Returned to TF 07/12/2016 | Region of Action- Japan |
5743
LI - 1 | Revise SEMI M1 to remove category 1.15 wafers of 300 mm diameter | Technical Review Delayed Until Next Committee Meeting 12/03/2014 | Region of Action- NA |
| 5744A | Line Item Revision to SEMI M49-0613 - Guide for Specifying Geometry Measurement Systems for Silicon Wafers for the 130 nm to 16 nm Technology Generations (Re: to clarify and better define exclusion windows) | See Line Items Below | Region of Action- NA |
5744A
LI - 1 | Add more specific description for exclusion windows at section 5.5.22, and rewrite section 3.4 at table 3 and table 4. Also maintain update in the table 2. | Published 10/28/2016 | Region of Action- NA |
| 5746 | Line Item Revision of SEMI ME1392-1109, Guide for Angle Resolved Optical Scatter Measurements on Specular or Diffuse Surfaces | See Line Items Below | Region of Action- NA |
5746
LI - 1 | Reference updates and editorial changes | Published 01/22/2016 | Region of Action- NA |
| 5770 | New Standard: Guide For Measuring Bulk Micro Defect Density and Denuded Zone Width in Annealed Silicon Wafers | Failed Technical Review and Returned to TF 12/17/2015 | Region of Action- Japan |
| 5774 | New Standard: Guide for Sample Preparation Method for Minority Carrier Diffusion Length Measurement in Silicon Wafers by Surface Photovoltage Method | Failed Technical Review and Returned to TF 12/14/2017 | Region of Action- Japan |
| 5774A | New Standard: Guide for Sample Preparation Method for Minority Carrier Diffusion Length Measurement in Silicon Wafers by Surface Photovoltage Method | Published as SEMI M88-0119 01/11/2019 | Region of Action- Japan |
| 5804 | Revision of SEMI M53-0310, Practice for Calibrating Scanning Surface Inspection Systems Using Certified Depositions of Monodisperse Reference Spheres on Unpatterned Semiconductor Wafer Surfaces | Published 02/05/2016 | Region of Action- NA |
| 5834 | Line Item Revision to SEMI M85-1014: Guide for the Measurement of Trace Metal Contamination on Silicon Wafer Surface by Inductively Coupled Plasma Mass Spectrometry | See Line Items Below | Region of Action- Japan |
5834
LI - 1 | Adding some explanations to 10.1.7 | Published 01/24/2020 | Region of Action- Japan |
5834
LI - 2 | Adding some explanation to NOTE 4 | Published 01/24/2020 | Region of Action- Japan |
5834
LI - 3 | Changing some words in 12.3.1 | Published 01/24/2020 | Region of Action- Japan |
5834
LI - 4 | Changing some words in 12.3.2 | Published 01/24/2020 | Region of Action- Japan |
| 5855A | Line Item Revision of SEMI MF1771-1110 Test Method For Evaluating Gate Oxide Integrity By Voltage Ramp Technique | See Line Items Below | Region of Action- NA |
5855A
LI - 1 | Correct the source and its designations for the referenced standards in section 4.2 | Published 04/22/2016 | Region of Action- NA |
| 5859 | Line Item Revision of SEMI MF1811-0310, Guide for Estimating the Power Spectral Density Function and Related Finish Parameters from Surface Profile Data | See Line Items Below | Region of Action- NA |
5859
LI - 1 | Changed “a-priori” to “a priori” in ¶¶ 2.8, 4.2.16.1, and 4.2.28.1 | Passed Technical Review - Awaiting Procedural Review 10/07/2015 | Region of Action- NA |
5859
LI - 2 | In ¶ 4.2.29.2.1, eliminated the line break in the inline equation | Passed Technical Review - Awaiting Procedural Review 10/07/2015 | Region of Action- NA |
5859
LI - 3 | In ¶ 5.3.1, added missing square bracket to Eq 29 | Passed Technical Review - Awaiting Procedural Review 10/07/2015 | Region of Action- NA |
5859
LI - 4 | In ¶ 5.4.2, spelt bookkeeping without a hyphen | Passed Technical Review - Awaiting Procedural Review 10/07/2015 | Region of Action- NA |
| 5877 | Revision to SEMI M80-0514, Mechanical Specification for Front-Opening Shipping Box Used to Transport and Ship 450 mm Wafers with title change to:
Specification for Front-Opening Shipping Box Used to Transport and Ship 450 mm Wafers | Published 01/22/2016 | Region of Action- Japan |
| 5893 | Revision of SEMI M1-0915 Specification for Polished Single Crystal Silicon Wafers | Published 04/28/2016 | Region of Action- NA |
| 5910 | Line Item Revision of SEMI M57-0515, Specifications for Silicon Annealed Wafers | See Line Items Below | Region of Action- NA |
5910
LI - 1 | Correct the title of this standard from “Specifications” to “Specification” | Published 03/30/2016 | Region of Action- NA |
| 5915 | Line Item Revision to SEMI M1-1016: SPECIFICATION FOR POLISHED SINGLE CRYSTAL SILICON WAFERS (To add Illustration of Flatness Metrics for Silicon Wafers) | See Line Items Below | Region of Action- Japan |
5915
LI - 1 | To add figures to newly provided Related Information 4 of M1 to illustrate the flatness metrics for silicon wafers and to add Table A1-1 to Appendix 1 with references for the figures added. | Published 11/03/2017 | Region of Action- Japan |
| 5929 | Line Item Revision of SEMI MF42-1105 (Reapproved 0611) Test Methods for Conductivity Type of Extrinsic Semiconducting Materials | See Line Items Below | Region of Action- NA |
5929
LI - 1 | Correct the title of this standard from “Test Methods” to “Test Method” | Published 03/30/2016 | Region of Action- NA |
| 5930 | Line Item Revision of SEMI MF43-0705 (Reapproved 0611) Test Methods for Resistivity of Semiconductor Materials | See Line Items Below | Region of Action- NA |
5930
LI - 1 | Correct the title of this standard from “Test Methods” to “Test Method” | Published 03/25/2016 | Region of Action- NA |
| 5931 | Reapproval of SEMI MF81-1105 (Reapproved 0611) Test Method for Measuring Radial Resistivity Variation on Silicon Wafers | Published 03/30/2016 | Region of Action- NA |
| 5932 | Reapproval of SEMI MF154-1105 (Reapproved 0611) Guide for Identification of Structures and Contaminants Seen on Specular Silicon Surfaces | Published 03/30/2016 | Region of Action- NA |
| 5933 | Line Item Revision of SEMI MF674-0705 (Reapproved 0611) Practice for Preparing Silicon for Spreading Resistance Measurements | See Line Items Below | Region of Action- NA |
5933
LI - 1 | Correct the title of this standard from “Practices” to “Practice” | Published 03/30/2016 | Region of Action- NA |
| 5934 | Line Item Revision of SEMI MF847-0705 (Reapproved 0611) Test Method for Measuring Crystallographic Orientation of Flats on Single Crystal Silicon Wafers by X-Ray Techniques | See Line Items Below | Region of Action- NA |
5934
LI - 1 | Correct the title of this standard from “Test Methods” to “Test Method” | Published 03/30/2016 | Region of Action- NA |
| 5935 | Reapproval of SEMI MF951-0305 (Reapproved 0211) Test Method for Determination of Radial Interstitial Oxygen Variation in Silicon Wafers | Published 03/30/2016 | Region of Action- NA |
| 5936 | Line Item Revision to SEMI MF1152-0305 (Reapproved 0211) Test Methods for Dimensions of Notches on Silicon Wafers | See Line Items Below | Region of Action- NA |
5936
LI - 1 | Correct the title of this standard from “Test Methods” to “Test Method” | Published 03/30/2016 | Region of Action- NA |
| 5937 | Reapproval of SEMI MF1239-0305 (Reapproved 0211) Test Method for Oxygen Precipitation Characteristics of Silicon Wafers by Measurement of Interstitial Oxygen Reduction | Published 04/15/2016 | Region of Action- NA |
| 5938 | Reapproval of SEMI MF2139-1103 (Reapproved 1110) Test Method for Measuring Nitrogen Concentration in Silicon Substrates by Secondary Ion Mass Spectrometry | Published 04/22/2016 | Region of Action- NA |
| 5939 | Reapproval of SEMI MF1617-0304 (Reapproved 0710) Test Method for Measuring Surface Sodium, Aluminum, Potassium, and Iron on Silicon and EPI Substrates by Secondary Ion Mass Spectrometry | Published 04/22/2016 | Region of Action- NA |
| 5940 | Reapproval of SEMI MF533-0310 Test Method for Thickness and Thickness Variation of Silicon Wafers | Published 04/22/2016 | Region of Action- NA |
| 5975 | Reapproval of SEMI M45-1110 Specification for 300mm wafer shipping System | Published 08/02/2017 | Region of Action- Japan |
| 5981 | New Standard: Test Method For Recombination Lifetime Of The Epilayer Of The Silicon Epitaxial Wafer (p/p+, n/n+) By The Short Wavelength Excitaion Microwave Photoconductive Decay Method | Published as SEMI M89-0721 07/09/2021 | Region of Action- Japan |
| 5989 | Revision of SEMI M62-0515, Specifications for Silicon Epitaxial Wafers | Published 03/31/2017 | Region of Action- NA |
| 5990 | Revision of SEMI MF1811-0116 GUIDE FOR ESTIMATING THE POWER SPECTRAL DENSITY FUNCTION AND RELATED FINISH PARAMETERS FROM SURFACE PROFILE DATA | Published 11/18/2016 | Region of Action- NA |
| 5993 | Line Item Revision of SEMI M1-0416, Specification for Polished Single Crystal Silicon Wafers | See Line Items Below | Region of Action- NA |
5993
LI - 1 | Clarify the heading and intent of section 7 | Published 10/28/2016 | Region of Action- NA |
| 5994 | Line Item Revision to SEMI M50, Test Methods for Determining Capture Rate and False Count Rate for Surface Scanning Inspection Systems by the Overlay Method (Fix title for conformance) | See Line Items Below | Region of Action- NA |
5994
LI - 1 | Correct the title of this standard from “TEST METHODS” to “TEST METHOD” and modify section 1.2 and 2.1 as shown. | Published 11/18/2016 | Region of Action- NA |
| 5995 | Line Item Revision of SEMI MF1048-1111 TEST METHOD FOR MEASURING REFLECTIVE TOTAL INTEGRATED SCATTER | See Line Items Below | Region of Action- NA |
5995
LI - 1 | Make correction in section 4, 6.5 and figure 1 as shown. | Published 02/24/2017 | Region of Action- NA |
| 6019 | Line item revision of SEMI M1-0416, Specification for Polished Single Crystal Silicon Wafers | See Line Items Below | Region of Action- NA |
6019
LI - 1 | Correct and update Figure 3. | Published 10/28/2016 | Region of Action- NA |
6019
LI - 2 | Remove redundant notes from the caption of Figure 7, and delete the term “outer” before “FQA boundary.” | Published 10/28/2016 | Region of Action- NA |
6019
LI - 3 | Point out in ¶R3-4.4 that minority carrier lifetime measurements in electronic silicon manufacture must be controlled by recombination at impurities. | Failed Technical Review and Returned to TF 07/12/2016 | Region of Action- NA |
6019
LI - 4 | Add “and bow” to Note 13. | Published 10/28/2016 | Region of Action- NA |
6019
LI - 5 | Add “and 450” to ¶R3-9.5 and correct the reference to ¶R3-9.4. | Published 10/28/2016 | Region of Action- NA |
| 6019A | Line Item Revision of SEMI M1-1016, Specification for Polished Single Crystal Silicon Wafers | See Line Items Below | Region of Action- NA |
6019A
LI - 1 | Change ¶R3-4.4 as follows to point out that minority carrier lifetime measurements in electronic silicon manufacture must be controlled by recombination at impurities | Published 11/03/2017 | Region of Action- NA |
| 6041 | Line Item Revision of M21-1110 Guide For Assigning Addresses To Rectangular Elements In A Cartesian Array | See Line Items Below | Region of Action- NA |
6041
LI - 1 | Changes to various related sections shown | Published 03/23/2018 | Region of Action- NA |
| 6042 | Line Item Revision to SEMI MF1763-0706 (Reapproved 1111)Test Methods for Measuring Contrast of a Linear Polarizer
(Title correction for conformance) | See Line Items Below | Region of Action- NA |
6042
LI - 1 | Correct title and concomitant text. | Failed Technical Review and Returned to TF 12/15/2016 | Region of Action- NA |
| 6042A | Line Item Revision to SEMI MF1763-0706 (Reapproved 1111)Test Methods for Measuring Contrast of a Linear Polarizer (Title correction for conformance) | See Line Items Below | Region of Action- NA |
6042A
LI - 1 | Correct title and concomitant text. | Published 03/23/2018 | Region of Action- NA |
| 6043 | Line Item Revision to SEMI MF28-0707 (Reapproved 0912) Test Methods for Minority Carrier Lifetime in Bulk Germanium and Silicon by Measurement of Photoconductivity Decay
(Title correction for conformance) | See Line Items Below | Region of Action- NA |
6043
LI - 1 | Correct title and concomitant text | Published 03/10/2017 | Region of Action- NA |
| 6044 | Line Item Revision to SEMI MF673-1014 Test Methods For Measuring Resistivity Of Semiconductor Wafers Or Sheet Resistance Of Semiconductor Films With A Noncontact Eddy-current Gauge
(Title correction for conformance) | See Line Items Below | Region of Action- NA |
6044
LI - 1 | Correct title and concomitant text | Published 03/10/2017 | Region of Action- NA |
| 6045 | Line Item Revision to SEMI MF928-1014 Test Methods For Edge Contour Of Circular Semiconductor Wafers And Rigid Disk Substrates
(Title correction for conformance) | See Line Items Below | Region of Action- NA |
6045
LI - 1 | Correct title and concomitant text | Published 03/10/2017 | Region of Action- NA |
| 6046 | Line Item Revision to SEMI MF1982-0714 Test Methods For Analyzing Organic Contaminants On Silicon Wafer Surfaces By Thermal Desorption Gas Chromatography
(Title correction for conformance) | See Line Items Below | Region of Action- NA |
6046
LI - 1 | Correct title and concomitant text | Published 03/10/2017 | Region of Action- NA |
| 6047 | Reapproval of SEMI MF728-1106 (Reapproved 1111) Practice for Preparing an Optical Microscope for Dimensional Measurements | Published 03/10/2017 | Region of Action- NA |
| 6048 | Reapproval of SEMI MF978-1106 (Reapproved 1111)Test Method for Characterizing Semiconductor Deep Levels by Transient Capacitance Techniques | Published 03/10/2017 | Region of Action- NA |
| 6096 | Line Item Revision to SEMI M53-0216 Practice for Calibrating Scanning Surface Inspection Systems Using Certified Depositions of Monodispere Reference Spheres on Unpatterned Semiconductor Wafer Surfaces (Addition of a related information 2)
| See Line Items Below | Region of Action- NA |
6096
LI - 1 | Addtion of Related Information 2 | Failed Technical Review and Returned to TF 07/11/2017 | Region of Action- NA |
| 6096A | Line Item Revision to SEMI M53-0216 Practice for Calibrating Scanning Surface Inspection Systems Using Certified Depositions of Monodispere Reference Spheres on Unpatterned Semiconductor Wafer Surfaces (Addition of related information 2)
| See Line Items Below | Region of Action- NA |
6096A
LI - 1 | Addition of Related Information 2 | Published 04/13/2018 | Region of Action- NA |
| 6168 | Line item Revision for M67 “Test Method For Determining Wafer Near-Edge Geometry From A measured Thickness Data Array Using The ESFQR, ESFQD And ESBIR Metrics" to add exclusion windows to prevent distorted area data.
| See Line Items Below | Region of Action- NA |
6168
LI - 1 | Revision for M67, Adding exclusion windows to determine valid sector for ZDD | Published 07/17/2020 | Region of Action- NA |
| 6169 | Line Item Revision to MF1390-1014: Test Method For Measuring Bow And Warp On Silicon Wafer By Automated Noncontact Scanning | See Line Items Below | Region of Action- Japan |
6169
LI - 1 | Delete Note 3 in section 2.5 and MF657 in section 4.1 | Published 02/23/2018 | Region of Action- Japan |
6169
LI - 2 | Delete Note 2 and Modify sections as shown | Published 02/23/2018 | Region of Action- Japan |
| 6170 | Line item Revision to SEMI M49 “Guide For Specifying Geometry Measurement Systems For Silicon Wafers For The 130 nm TO 16 nm Technology Generations | See Line Items Below | Region of Action- Japan |
6170
LI - 1 | Adding notes at table 2 and also add note and recommended specification at table 3 to be met with available 200mm wafer metrology tools, and make error correction. | Failed Technical Review and Returned to TF 12/14/2017 | Region of Action- Japan |
| 6170A | Line item Revision to SEMI M49 “Guide For Specifying Geometry Measurement Systems For Silicon Wafers For The 130 nm TO 16 nm Technology Generations | See Line Items Below | Region of Action- Japan |
6170A
LI - 1 | Adding notes at table 2 Material to be measured | Published 09/21/2018 | Region of Action- Japan |
6170A
LI - 2 | Change spatial bandwidth for 130nm in table 3 | Published 09/21/2018 | Region of Action- Japan |
6170A
LI - 3 | Delete optional spatial bandwidth range of nanotopography in Table3 | Published 09/21/2018 | Region of Action- Japan |
6170A
LI - 4 | Editorial Change at item 1.2.1 Table 3 | Published 09/21/2018 | Region of Action- Japan |
| 6205 | Line Item Revision to SEMI M43-1109, Guide for Reporting Wafer Nanotopgraphy | See Line Items Below | Region of Action- NA |
6205
LI - 1 | Change the source of the footnote 1 reference. | Published 04/06/2018 | Region of Action- NA |
| 6206 | Line Item Revision to SEMI M78-1110, Guide for Determining Nanotopography of Unpatterned Silicon Wafers for the 130 nm to 22 nm Generations in High Volume Manufacturing | See Line Items Below | Region of Action- NA |
6206
LI - 1 | Change the source of the footnote 1 reference. | Published 06/15/2018 | Region of Action- NA |
| 6207 | Line Items Revision to SEMI M1-1117, Specification for Polished Single Crystal Silicon Wafers (Add Shape metrics of Bow 3p in appendix 2 which was mistakenly removed at previous ballot, and add Illustrations of Shape Metrics for Silicon Wafers in Appendix 2.) | See Line Items Below | Region of Action- Japan |
6207
LI - 1 | Adding Bow 3 point at Shape discussion tree and related modification. | Published 09/21/2018 | Region of Action- Japan |
6207
LI - 2 | Adding Shape Illustration at A1 | Published 09/21/2018 | Region of Action- Japan |
6207
LI - 3 | Clarification for gravitational sag at 6.7.3 and 6.7.3.1 | Published 09/21/2018 | Region of Action- Japan |
6207
LI - 4 | Error correction | Published 09/21/2018 | Region of Action- Japan |
| 6264 | Reapproval of SEMI M8-0312 - Specification for Polished Monocrystalline Silicon Test Wafers | Published 07/20/2018 | Region of Action- NA |
| 6265 | Reapproval of SEMI M38-0312 - Specification for Polished Reclaimed Silicon Wafers | Published 07/20/2018 | Region of Action- NA |
| 6266 | Reapproval of SEMI MF110-1107 (Reapproved 0912) Test Method for Thickness of Epitaxial or Diffused Layers in Silicon by the Angle Lapping and Staining Technique | Published 07/20/2018 | Region of Action- NA |
| 6267 | Reapproval of SEMI MF1188-1107 (Reapproved 0912) Test Method for Interstitial Oxygen Content of Silicon by Infrared Absorption With Short Baseline | Published 07/20/2018 | Region of Action- NA |
| 6268 | Reapproval of SEMI MF1388-0707 (Reapproved 0412) Test Method for Generation Lifetime and Generation Velocity of Silicon Material by Capacitance-Time Measurements of Metal-Oxide-Silicon (MOS) Capacitors | Published 07/20/2018 | Region of Action- NA |
| 6269 | Reapproval of SEMI MF1392-0307 (Reapproved 0512) Test Method for Determining Net Carrier Density Profiles in Silicon Wafers by Capacitance-Voltage Measurements with a Mercury Probe | Published 07/20/2018 | Region of Action- NA |
| 6270 | Reapproval of SEMI MF1527-0412 Guide for Application of Certified Reference Materials and Reference Wafers for Calibration and Control of Instruments for Measuring Resistivity of Silicon | Failed Technical Review and Returned to TF 12/14/2017 | Region of Action- NA |
| 6271 | Reapproval of SEMI MF1569-0307 (Reapproved 0512) Guide for Generation of Consensus Reference Materials for Semiconductor Technology | Published 07/20/2018 | Region of Action- NA |
| 6272 | Reapproval of SEMI MF950-1107 (Reapproved 0912)
Test Method For Measuring The Depth Of Crystal Damage Of A Mechanically Worked Silicon Wafer Surface By Angle Polishing And Defect Etching | Published 07/27/2018 | Region of Action- NA |
| 6273 | Reapproval of SEMI MF1619-1107 (Reapproved 0912) Test Method for Measurement of Interstitial Oxygen Content of Silicon Wafers by Infrared Absorption Spectroscopy with p-Polarized Radiation Incident at the Brewster Angle | Published 07/27/2018 | Region of Action- NA |
| 6274 | Reapproval of SEMI MF1630-1107 (Reapproved 0912) Test Method for Low Temperature FT-IR Analysis of Single Crystal Silicon for III-V Impurities | Published 07/27/2018 | Region of Action- NA |
| 6275 | Reapproval of SEMI MF2074-0912 Guide for Measuring Diameter of Silicon and Other Semiconductor Wafers | Published 07/27/2018 | Region of Action- NA |
| 6276 | Reapproval of SEMI MF374-0312 Test Method for Sheet Resistance of Silicon Epitaxial, Diffused, Polysilicon, and Ion-implanted Layers Using an In-Line Four-Point Probe with the Single-Configuration Procedure | Published 07/27/2018 | Region of Action- NA |
| 6277 | Reapproval of SEMI MF397-0812 Test Method for Resistivity of Silicon Bars Using a Two-Point Probe | Published 07/27/2018 | Region of Action- NA |
| 6278 | Reapproval of SEMI MF523-1107 (Reapproved 1012) Practice for Unaided Visual Inspection of Polished Silicon Wafer Surfaces | Published 07/27/2018 | Region of Action- NA |
| 6279 | Reapproval of SEMI MF525-0312 Test Method for Measuring Resistivity of Silicon Wafers Using a Spreading Resistance Probe | Published 07/27/2018 | Region of Action- NA |
| 6280 | Reapproval of SEMI MF576-0812 Test Method for Measurement of Insulator Thickness and Refractive Index on Silicon Substrates by Ellipsometry | Published 07/27/2018 | Region of Action- NA |
| 6281 | Reapproval of SEMI MF84-0312 Test Method For Measuring Resistivity Of Silicon Wafers With An In-Line Four-Point Probe | Published 07/27/2018 | Region of Action- NA |
| 6282 | Reapproval of SEMI MF671-0312 Test Method for Measuring Flat Length on Wafers of Silicon and Other Electronic Materials | Published 07/27/2018 | Region of Action- NA |
| 6283 | Reapproval of SEMI MF95-1107 (Reapproved 1012)
Test Method For Thickness Of Lightly Doped Silicon Epitaxial Layers On Heavily Doped Silicon Substrates Using An Infrared Dispersive Spectrophotometer | Published 07/27/2018 | Region of Action- NA |
| 6284 | Reapproval of SEMI M56-0307 (Reapproved 0512) - Practice for Determining Cost Components for Metrology Equipment Due to Measurement Variability and Bias | Failed Technical Review and Returned to TF 12/14/2017 | Region of Action- NA |
| 6284A | REVISION TO SEMI M56-0307 (Reapproved 0512)
PRACTICE FOR DETERMINING COST COMPONENTS FOR METROLOGY EQUIPMENT DUE TO MEASUREMENT VARIABILITY AND BIAS | Published 10/19/2018 | Region of Action- NA |
| 6292 | Line Item Revision to modify the nonconforming title of SEMI M31-0708 MECHANICAL SPECIFICATION FOR FRONT-OPENING SHIPPING BOX USED TO TRANSPORT AND SHIP 300 mm WAFERS | See Line Items Below | Region of Action- Japan |
6292
LI - 1 | To modify the nonconforming title | Published 07/30/2018 | Region of Action- Japan |
| 6355 | Reapproval of SEMI MF1049-0308 (Reapproved 0413) Practice for Shallow Etch Pit Detection on Silicon Wafers | Published 10/19/2018 | Region of Action- NA |
| 6356 | Reapproval of SEMI MF1366-0308 (Reapproved 0413) Test Method for Measuring Oxygen Concentration in Heavily Doped Silicon Substrates by Secondary Ion Mass Spectrometry | Published 10/19/2018 | Region of Action- NA |
| 6357 | Reapproval of SEMI MF1528-0413 Test Method for Measuring Boron Contamination in Heavily Doped N-Type Silicon Substrates by Secondary Ion Mass Spectrometry | Published 10/19/2018 | Region of Action- NA |
| 6358 | Reapproval of SEMI MF672-0412 Guide for Measuring Resistivity Profiles Perpendicular to the Surface of a Silicon Wafer Using a Spreading Resistance Probe | Published 10/26/2018 | Region of Action- NA |
| 6359 | Line Item Revision of SEMI MF1527-0412 Guide for Application of Certified Reference Materials and Reference Wafers for Calibration and Control of Instruments for Measuring Resistivity of Silicon | See Line Items Below | Region of Action- NA |
6359
LI - 1 | Change section 5.1, 5.2, and 5.3 as shown. | Published 10/26/2018 | Region of Action- NA |
| 6360 | Reapproval of SEMI M74-1108 (Reapproved 0413) Specification for 450 mm Diameter Mechanical Handling Polished Wafers | Published 10/26/2018 | Region of Action- NA |
| 6361 | Reapproval of SEMI MF1530-0707 (Reapproved 0512) Test Method for Measuring Flatness, Thickness, and Total Thickness Variation on Silicon Wafers by Automated Noncontact Scanning | Published 10/26/2018 | Region of Action- NA |
| 6362 | Line Item Revision of SEMI M53-0216 Practice for Calibrating Scanning Surface Inspection Systems Using Certified Depositions of Monodispere Reference Spheres on Unpatterned Semiconductor Wafer Surfaces | See Line Items Below | Region of Action- NA |
6362
LI - 1 | Revise Related Information 2 | Published 02/28/2019 | Region of Action- NA |
| 6363 | Revision of SEMI M52-0214 with title change to: GUIDE FOR SPECIFYING SCANNING SURFACE INSPECTION SYSTEMS FOR SILICON WAFERS FOR THE 130 nm TO 5 nm TECHNOLOGY GENERATIONS | Published 06/24/2021 | Region of Action- NA |
| 6397 | Reapproval of SEMI M61-0612 SPECIFICATION FOR SILICON EPITAXIAL WAFERS WITH BURIED LAYERS | Published 03/15/2019 | Region of Action- Japan |
| 6398 | Reapproval of SEMI MF1451-0707 (Reapproved 0512) - Test Method for Measuring Sori on Silicon Wafers by Automated Noncontact Scanning | Published 03/15/2019 | Region of Action- Japan |
| 6425 | Line Item Revision to SEMI M1-0918, Specification for Polished Single Crystal Silicon Wafers | See Line Items Below | Region of Action- NA |
6425
LI - 1 | Remove references to PV13 and add footnote 9. | Failed Technical Review and Returned to TF 07/09/2019 | Region of Action- NA |
| 6427 | New Auxiliary Information: Round-Robin Testing of Sample Preparation Methods for Minority Carrier Diffusion Length Measurements by Surface Photovoltage Methods | Published 05/31/2019 | Region of Action- Japan |
| 6440 | Revision of SEMI M71-0912 Specification for Silicon-on-Insulator (SOI) Wafers for CMOS LSI | Published 01/17/2020 | Region of Action- NA |
| 6461 | Reapproval of SEMI M73-1013E Test Method for Extracting Relevant Characteristics from Measured Wafer Edge Profiles | Published 10/04/2019 | Region of Action- Europe |
| 6462 | Line Item Revision to SEMI M1-0918,Specification for Polished Single Crystal Silicon Wafers
| See Line Items Below | Region of Action- Europe |
6462
LI - 1 | Changes to Related Information 4 and other pertinent sections | Failed Technical Review and Returned to TF 07/21/2020 | Region of Action- Europe |
| 6501 | Reapproval of SEMI M35-1114 Guide for Developing Specifications for Silicon Wafer Surface Features Detected by Automated Inspection | Published 10/11/2019 | Region of Action- NA |
| 6505 | Line item Revision for M68 “Test Method For Determining Wafer Near-Edge Geometry From A Measured Thickness Data Array Using Curvature Metric, ZDD” to add exclusion windows to prevent distorted area data
| See Line Items Below | Region of Action- NA |
6505
LI - 1 | Revision to SEMI M68 - Adding exclusion windows to determine valid sector for ZDD | Published 07/17/2020 | Region of Action- NA |
| 6519 | Revision of SEMI M53-0219, Practice for Calibrating Scanning Surface Inspection Systems Using Certified Depositions of Monodispere Reference Spheres on Unpatterned Semiconductor Wafer Surfaces | Published 02/21/2020 | Region of Action- NA |
| 6526 | New Standard Document: Test Method for Bulk Microdefect density and Denuded Zone Width in Annealed Silicon Wafers by Optical Microscopy after Preferential Etching
| Failed Technical Review and Returned to TF 07/09/2019 | Region of Action- Japan |
| 6526A | New Standard: Test Method for Bulk Microdefect density and Denuded Zone Width in Annealed Silicon Wafers by Optical Microscopy after Preferential Etching
| Failed Technical Review and Returned to TF 12/12/2019 | Region of Action- Japan |
| 6526B | New Standard Document: Test Method for Bulk Micro Defect Density and Denuded Zone Width in Annealed Silicon Wafers by Optical Microscopy after Preferential Etching | Published as SEMI M90-0821 08/13/2021 | Region of Action- Japan |
| 6570 | New Standard: Guide for Measuring Bulk Micro Defect Density and Denuded Zone Width in Annealed Silicon Wafers by a Laser-Scatter Tomography Technique | Drafting 03/22/2022 | Region of Action- Japan |
| 6570A | New Standard: Guide for Measuring Bulk Micro Defect Density and Denuded Zone Width in Annealed Silicon Wafers by a Laser-Scattering Tomography Technique | Failed Technical Review and Returned to TF 12/14/2022 | Region of Action- Japan |
| 6574 | Reapproval of SEMI M58-1109 (Reapproved 0614)E Test Method For Evaluating DMA Based Particle Deposition Systems and Processes | Published 03/27/2020 | Region of Action- NA |
| 6613 | Reapproval of SEMI M20-0215, Practice for Establishing a Wafer Coordinate System | Published 04/16/2021 | Region of Action- Europe |
| 6680 | Reapproval of M77-1015 Test Method for Determining Wafer Near-Edge Geometry Using Roll-Off Amount, ROA | Published 04/16/2021 | Region of Action- Japan |
| 6681 | Reapproval of MF1451 Test Method for Measuring Sori on Silicon Wafers by Automated Noncontact Scanning | Published 04/16/2021 | Region of Action- Japan |
| 6753 | Reapproval of SEMI MF723-0307E (Reapproved 0412)E Practice for Conversion Between Resistivity and Dopant or Carrier Density for Boron-Doped, Phosphorous-Doped, and Arsenic-Doped Silicon | Published 09/28/2021 | Region of Action- NA |
| 6754 | Reapproval of SEMI MF674-0316 Practice for Preparing Silicon for Spreading Resistance Measurements | Published 09/28/2021 | Region of Action- NA |
| 6755 | Reapproval of SEMI MF533-0310 (Reapproved 0416) Test Method for Thickness and Thickness Variation of Silicon Wafers | Failed Technical Review and Returned to TF 07/13/2021 | Region of Action- NA |
| 6756 | Reapproval of SEMI MF43-0316 Test Method for Resistivity of Semiconductor Materials | Published 09/28/2021 | Region of Action- NA |
| 6757 | Reapproval of SEMI MF42-0316 Test Method for Conductivity Type of Extrinsic Semiconducting Materials | Published 09/28/2021 | Region of Action- NA |
| 6758 | Reapproval of SEMI MF2139-1103 (Reapproved 0416) Test Method for Measuring Nitrogen Concentration in Silicon Substrates by Secondary Ion Mass Spectrometry | Published 11/05/2021 | Region of Action- NA |
| 6759 | Reapproval of SEMI MF1811-1116 Guide for Estimating the Power Spectral Density Function and Related Finish Parameters from Surface Profile Data | Published 11/05/2021 | Region of Action- NA |
| 6760 | Reapproval of SEMI MF1771-0416 Test Method for Evaluating Gate Oxide Integrity by Voltage Ramp Technique | Published 11/05/2021 | Region of Action- NA |
| 6761 | Reapproval of SEMI MF1535-1015 Test Method for Carrier Recombination Lifetime in Electronic-Grade Silicon Wafers by Noncontact Measurement of Photoconductivity Decay by Microwave Reflectance | Published 11/05/2021 | Region of Action- NA |
| 6762 | Reapproval of SEMI MF1529-1110 (Reapproved 1115) Test Method for Sheet Resistance Uniformity Evaluation by In-Line Four-Point Probe with the Dual-Configuration Procedure | Published 02/04/2022 | Region of Action- NA |
| 6763 | Reapproval of SEMI MF1239-0305 (Reapproved 0416) Test Method for Oxygen Precipitation Characteristics of Silicon Wafers by Measurement of Interstitial Oxygen Reduction | Published 02/04/2022 | Region of Action- NA |
| 6764 | Reapproval of SEMI MF1153-1110 (Reapproved 1015) Test Method for Characterization of Metal-Oxide Silicon (MOS) Structures by Capacitance-Voltage Measurements | Published 02/11/2022 | Region of Action- NA |
| 6765 | Reapproval of SEMI MF1152-0316 Test Method for Dimensions of Notches on Silicon Wafers | Published 02/11/2022 | Region of Action- NA |
| 6766 | Reapproval of SEMI M57-0316 Specification for Silicon Annealed Wafers | Published 10/28/2021 | Region of Action- NA |
| 6787 | Reapproval of SEMI MF951 - Test Method for Determination of Radial Interstitial Oxygen Variation in Silicon Wafers | Published 02/25/2022 | Region of Action- NA |
| 6788 | Reapproval of SEMI MF847 - Test Method for Measuring Crystallographic Orientation of Flats on Single Crystal Silicon Wafers by X-Ray Techniques | Published 02/25/2022 | Region of Action- NA |
| 6789 | Reapproval of SEMI MF81 - Test Method for Measuring Radial Resistivity Variation on Silicon Wafers | Published 12/10/2021 | Region of Action- NA |
| 6790 | Reapproval of SEMI MF1809 - Guide for Selection and Use of Etching Solutions to Delineate Structural Defects in Silicon | Published 02/25/2022 | Region of Action- NA |
| 6791 | Reapproval of SEMI MF1810 - Test Method for Counting Preferentially Etched or Decorated Surface Defects in Silicon Wafers | Published 02/25/2022 | Region of Action- NA |
| 6792 | Reapproval of SEMI MF1725 - Practice for Analysis of Crystallographic Perfection of Silicon Ingots | Published 03/04/2022 | Region of Action- NA |
| 6793 | Reapproval of SEMI MF1726 - Practice for Analysis of Crystallographic Perfection of Silicon Wafers | Published 03/04/2022 | Region of Action- NA |
| 6794 | Reapproval of SEMI MF1727 - Practice for Detection of Oxidation Induced Defects in Polished Silicon Wafers | Published 03/04/2022 | Region of Action- NA |
| 6795 | Reapproval of SEMI MF1617 - Test Method for Measuring Surface Sodium, Aluminum, Potassium, and Iron on Silicon and EPI Substrates by Secondary Ion Mass Spectrometry | Published 03/04/2022 | Region of Action- NA |
| 6796 | Reapproval of SEMI MF1618 - Practice for Determination of Uniformity of Thin Films on Silicon Wafers | Published 03/04/2022 | Region of Action- NA |
| 6797 | Reapproval of SEMI MF154 - Guide for Identification of Structures and Contaminants Seen on Specular Silicon Surfaces | Published 12/09/2021 | Region of Action- NA |
| 6798 | Reapproval of SEMI MF1389 - Test Method for Photoluminescence Analysis of Single Crystal Silicon for III-V Impurities | Published 02/25/2022 | Region of Action- NA |
| 6799 | Reapproval of SEMI M66 - Test Method to Extract Effective Work Function in Oxide and High-K Gate Stacks Using the MIS Flat Band Voltage-Insulator Thickness Technique | Published 11/10/2021 | Region of Action- NA |
| 6800 | Reapproval of SEMI M16 - Specification for Polycrystalline Silicon | Published 11/10/2021 | Region of Action- NA |
| 6801 | Reapproval of SEMI M17 - Guide for a Universal Wafer Grid | Published 11/10/2021 | Region of Action- NA |
| 6853 | Reapproval of SEMI MF978-1106 (Reapproved 0317) Test Method for Characterizing Semiconductor Deep Levels by Transient Capacitance Techniques | Published 06/24/2022 | Region of Action- NA |
| 6854 | Reapproval of SEMI MF928-0317, Test Method for Edge Contour of Circular Semiconductor Wafers and Rigid Disk Substrates | Published 06/24/2022 | Region of Action- NA |
| 6855 | Reapproval of SEMI MF728-1106 (Reapproved 0317)Practice for Preparing an Optical Microscope for Dimensional Measurements | Published 06/24/2022 | Region of Action- NA |
| 6856 | Reapproval of SEMI MF673-0317, Test Method for Measuring Resistivity of Semiconductor Wafers or Sheet Resistance of Semiconductor Films with a Noncontact Eddy-Current Gauge | Published 06/24/2022 | Region of Action- NA |
| 6857 | Reapproval of SEMI MF28-0317, Test Method for Minority Carrier Lifetime in Bulk Germanium and Silicon by Measurement of Photoconductivity Decay | Published 06/24/2022 | Region of Action- NA |
| 6860 | Revision of SEMI M41- 0615, Specification of Silicon-on-Insulator (SOI) for Power Device/ICs | Published 07/14/2023 | Region of Action- NA |
| 6957 | Line Item Revision of SEMI M52 - Guide for Specifying Scanning Surface Inspection Systems for Silicon Wafers for the 130 nm to 5 nm Technology Generations | See Line Items Below | Region of Action- NA |
6957
LI - 1 | Make changes as shown | Published 09/29/2023 | Region of Action- NA |
| 6958 | Reapproval of SEMI M21-0318 Guide for Assigning Addresses to Rectangular Elements in a Cartesian Array | Published 09/28/2023 | Region of Action- NA |
| 6982 | Revision to SEMI M78-0618 GUIDE FOR DETERMINING NANOTOPOGRAPHY OF UNPATTERNED SILICON WAFERS FOR THE 130 nm to 22 nm GENERATIONS IN HIGH VOLUME MANUFACTURING with Title Change | Published 09/15/2023 | Region of Action- Europe |
| 6983 | Revision for SEMI M49-0918 With Title Change To: Guide for Specifying Geometry Measurement Systems for Silicon Wafers for the 130 nm TO 3 nm technology generations | Failed Technical Review and Returned to TF 07/11/2023 | Region of Action- Japan |
| 6984 | Line item revision of SEMI M050-1116, Test Method for Determining Capture Rate and False Count Rate for Surface Scanning Inspection Systems by the Overlay Method | See Line Items Below | Region of Action- Europe |
6984
LI - 1 | Make an addition on section A1-6.4 | Published 09/22/2023 | Region of Action- Europe |
| 6985SEMI MF1390, Test Method for Measuring Bow and Warp on Silicon Wafers by Automated Noncontact Scanning | Reapproval of | Published 10/06/2023 | Region of Action- Europe |
| 6986 | Reapproval of SEMI M43, Guide for Reporting Wafer Nanotopography | Published 09/29/2023 | Region of Action- Europe |
| 6987 | Reapproval of SEMI M84, Specification for Polished Single Crystal Silicon Wafers for Gallium Nitride-On-Silicon Applications | Published 09/29/2023 | Region of Action- Europe |
| 6988 | Reapproval of SEMI MF1048-0217 Test Method For Measuring Reflective Total Integrated Scatter | Published 10/06/2023 | Region of Action- Europe |
| 6989 | Reapproval of SEMI M40, Guide for Measurement of Roughness of Planar Surfaces on Polished Wafers | Published 10/20/2023 | Region of Action- Europe |
| 6990 | Reapproval of SEMI ME1392, Guide for Angle Resolved Optical Scatter Measurements on Specular or Diffuse Surfaces | Published 10/13/2023 | Region of Action- Europe |
| 7024 | Line Item Revision to SEMI M1-0918, Specification for Polished Single Crystal Silicon Wafers
| See Line Items Below | Region of Action- Europe |
7024
LI - 1 | Change the 300 diameter tolerance from ±0.2mm to ±0.1mm | Drafting 01/25/2024 | Region of Action- Europe |
| 7025 | Line Item Revision of SEMI MF1529-1110: Test Method for “Sheet Resistance Uniformity Evaluation by In-Line Four-Point Probe with the Dual-Configuration Procedure”
| See Line Items Below | Region of Action- NA |
7025
LI - 1 | Add a minus sign in equation 8. | Published 09/22/2023 | Region of Action- NA |
| 7029 | Reapproval of SEMI M61-0612 (Reapproved 0319)Specification for Silicon Epitaxial Wafers with Buried Layers | Published 10/20/2023 | Region of Action- NA |
| 7030 | Reapproval of SEMI MF95-1107 (Reapproved 0718) Test Method for Thickness of Lightly Doped Silicon Epitaxial Layers on Heavily Doped Silicon Substrates Using an Infrared Dispersive Spectrophotometer | Published 10/06/2023 | Region of Action- NA |
| 7031 | Reapproval of SEMI MF950-1107 (Reapproved 0718) Test Method for Measuring the Depth of Crystal Damage of a Mechanically Worked Silicon Wafer Surface by Angle Polished and Defect Etching | Published 10/06/2023 | Region of Action- NA |
| 7032 | Reapproval of SEMI MF84-0312 (Reapproved 0718) Test Method for Measuring Resistivity of Silicon Wafers With an In-Line Four-Point Probe | Published 10/13/2023 | Region of Action- NA |
| 7033 | Reapproval of SEMI MF672-0412 (Reapproved 1018) Guide for Measuring Resistivity Profiles Perpendicular to the Surface of a Silicon Wafer Using a Spreading Resistance Probe | Published 10/13/2023 | Region of Action- NA |
| 7034 | Reapproval of SEMI MF671-0312 (Reapproved 0718) Test Method for Measuring Flat Length on Wafers of Silicon and Other Electronic Materials | Published 10/13/2023 | Region of Action- NA |
| 7035 | Reapproval of SEMI MF576-0812 (Reapproved 0718) Test Method for Measurement of Insulator Thickness and Refractive Index on Silicon Substrates by Ellipsometry | Published 10/13/2023 | Region of Action- NA |
| 7036 | Reapproval of SEMI MF533-0310 (Reapproved 0416) Test Method for Thickness and Thickness Variation of Silicon Wafers | Published 10/13/2023 | Region of Action- NA |
| 7037 | Reapproval of SEMI MF525-0312 (Reapproved 0718) Test Method for Measuring Resistivity of Silicon Wafers Using a Spreading Resistance Probe | Published 10/13/2023 | Region of Action- NA |
| 7038 | Reapproval of SEMI MF523-1107 (Reapproved 0718) Practice for Unaided Visual Inspection of Polished Silicon Wafer Surfaces | Published 10/16/2023 | Region of Action- NA |
| 7039 | Reapproval of SEMI MF397-0812 (Reapproved 0718) Test Method for Resistivity of Silicon Bars Using a Two-Point Probe | Published 10/16/2023 | Region of Action- NA |
| 7040 | Reapproval of SEMI MF374-0312 (Reapproved 0718) Test Method for Sheet Resistance of Silicon Epitaxial, Diffused, Polysilicon, and Ion-implanted Layers Using an In-Line Four-Point Probe with the Single-Configuration Procedure | Published 10/16/2023 | Region of Action- NA |
| 7041 | Reapproval of SEMI MF26-0714E Test Method for Determining the Orientation of a Semiconductive Single Crystal | Published 10/20/2023 | Region of Action- NA |
| 7042 | Reapproval of SEMI MF2074-0912 (Reapproved 0718) Guide for Measuring Diameter of Silicon and Other Semiconductor Wafers | Published 10/20/2023 | Region of Action- NA |
| 7043 | Reapproval of SEMI MF1982-0317 Test Method for Analyzing Organic Contaminants on Silicon Wafer Surfaces by Thermal Desorption Gas Chromatography | Published 10/20/2023 | Region of Action- NA |
| 7044 | Reapproval of SEMI MF1763-0318 Test Method for Measuring Contrast of a Linear Polarizer | Published 10/20/2023 | Region of Action- NA |
| 7045 | Reapproval of SEMI MF1630-1107 (Reapproved 0718) Test Method for Low Temperature FT-IR Analysis of Single Crystal Silicon for III-V Impurities | Published 11/30/2023 | Region of Action- NA |
| 7046 | Reapproval of SEMI MF1619-1107 (Reapproved 0718) Test Method for Measurement of Interstitial Oxygen Content of Silicon Wafers by Infrared Absorption Spectroscopy with p-Polarized Radiation Incident at the Brewster Angle | Published 10/27/2023 | Region of Action- NA |
| 7072 | Reapproval of SEMI MF1569-0307 (Reapproved 0718) Guide for Generation of Consensus Reference Materials for Semiconductor Technology | Published 10/27/2023 | Region of Action- NA |
| 7073 | Reapproval of SEMI MF1527-0412 (Reapproved 1018) Guide for Application of Certified Reference Materials and Reference Wafers for Calibration and Control of Instruments for Measuring Resistivity of Silicon | Published 10/27/2023 | Region of Action- NA |
| 7074 | Reapproval of SEMI MF1392-0307 (Reapproved 0718) Test Method for Determining Net Carrier Density Profiles in Silicon Wafers by Capacitance-Voltage Measurements with a Mercury Probe | Published 10/27/2023 | Region of Action- NA |
| 7075 | Reapproval of SEMI MF1391-1107 (Reapproved 0912) Test Method for Substitutional Atomic Carbon Content of Silicon by Infrared Absorption | Published 10/27/2023 | Region of Action- NA |
| 7076 | Reapproval of SEMI MF1388-0707 (Reapproved 0718) Test Method for Generation Lifetime and Generation Velocity of Silicon Material by Capacitance-Time Measurements of Metal-Oxide-Silicon (MOS) Capacitors | Published 10/27/2023 | Region of Action- NA |
| 7077 | Reapproval of SEMI MF1366-0308 (Reapproved 1018) Test Method for Measuring Oxygen Concentration in Heavily Doped Silicon Substrates by Secondary Ion Mass Spectrometrys | Published 10/27/2023 | Region of Action- NA |
| 7078 | Reapproval of SEMI MF1188-1107 (Reapproved 0718) Test Method for Interstitial Oxygen Content of Silicon by Infrared Absorption With Short Baseline | Published 11/10/2023 | Region of Action- NA |
| 7079 | Reapproval of SEMI MF110-1107 (Reapproved 0718) Test Method for Thickness of Epitaxial or Diffused Layers in Silicon by the Angle Lapping and Staining Technique | Published 11/10/2023 | Region of Action- NA |
| 7080 | Reapproval of SEMI MF1049-0308 (Reapproved 1018) Practice for Shallow Etch Pit Detection on Silicon Wafers | Published 11/10/2023 | Region of Action- NA |
| 7081 | Reapproval of SEMI M8-0312 (Reapproved 0718) Specification for Polished Monocrystalline Silicon Test Wafers | Published 10/16/2023 | Region of Action- NA |
| 7082 | Reapproval of SEMI M56-1018 Practice for Determining Cost Components for Metrology Equipment Due to Measurement Variability and Bias | Published 10/16/2023 | Region of Action- NA |
| 7083 | Reapproval of SEMI M38-0312 (Reapproved 0718) Specification for Polished Reclaimed Silicon Wafers | Published 10/16/2023 | Region of Action- NA |
| 7163 | Reapproval of SEMI MF1530-0707 (Reapproved 1018): Test Method for Measuring Flatness, Thickness, and Total Thickness Variation on Silicon Wafers by Automated Noncontact Scanning | Drafting 02/08/2024 | Region of Action- Europe |
| 7223 | Reapproval of SEMI M35-1114 (Reapproved 1019) Guide for Developing Specifications for Silicon Wafer Surface Features Detected by Automated Inspection | Drafting 04/04/2024 | Region of Action- NA |
| 7224 | Reapproval of SEMI MF1528-0413 (Reapproved 1018) Test Method for Measuring Boron Contamination in Heavily Doped N-Type Silicon Substrates by Secondary Ion Mass Spectrometry | Drafting 04/04/2024 | Region of Action- NA |
| R5915 | Line Item Revision to SEMI M1-1016: Specification for Polished Single Crystal Silicon Wafers (To add Illustration of Flatness Metrics for Silicon Wafers) | See Line Items Below | Region of Action- Japan |
R5915
LI - 1 | To add figures and references in Appendix 1 of M1 to illustrate the flatness metrics for silicon wafers. | Published 11/03/2017 | Region of Action- Japan |
| R6519 | Revision of SEMI M53-0219 - Practice for Calibrating Scanning Surface Inspection Systems Using Certified Depositions of Monodispere Reference Spheres on Unpatterned Semiconductor Wafer Surfaces | Published 02/21/2020 | Region of Action- NA |