SEMI International Standards
SEMI New Activity Report Forms (SNARFs)
& SEMI Task Force Organization Forms (TFOFs)

Below you will find the TFOFs of all the task forces actively working in each region. The TFOF contains the charter and purpose of each task force.

The SNARFs that are listed under each task force are the individual activities of the task force. While the majority of these activities lead to the creation or revision of a standard, there are some activities which are focused on exploring and expanding the program.

If you have any further questions on a specific activity, contact your local Standards staff. A listing of global SEMI Standards staff can be found on the contact information page.

Blank forms
TFOF (DOC 115K) (Feb 2020)
SNARF (DOC 133K) (Nov 2021)

The listing of SNARFs and TFOFs below are sorted by Global Technical Committee, and then by the region that approved the TFOF.

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Show details for 3D Packaging and Integration3D Packaging and Integration
Show details for Automated Test EquipmentAutomated Test Equipment
Show details for Automation TechnologyAutomation Technology
Show details for Compound Semiconductor MaterialsCompound Semiconductor Materials
Show details for EH&SEH&S
Show details for FacilitiesFacilities
Show details for Flat Panel Display (FPD) - Materials & ComponentsFlat Panel Display (FPD) - Materials & Components
Show details for Flat Panel Display (FPD) - MetrologyFlat Panel Display (FPD) - Metrology
Show details for Flexible Hybrid Electronics (FHE)Flexible Hybrid Electronics (FHE)
Show details for GasesGases
Show details for HB-LEDHB-LED
Show details for Information & ControlInformation & Control
Show details for Liquid ChemicalsLiquid Chemicals
Show details for MEMS / NEMSMEMS / NEMS
Show details for MetricsMetrics
Show details for MicropatterningMicropatterning
Show details for PhotovoltaicPhotovoltaic
Show details for Photovoltaic (PV) - MaterialsPhotovoltaic (PV) - Materials
Show details for Physical Interfaces & CarriersPhysical Interfaces & Carriers
Hide details for Silicon WaferSilicon Wafer
Show details for EuropeEurope
Show details for InternationalInternational
Show details for JapanJapan
Hide details for North AmericaNorth America
Show details for International Annealed Si Wafer Task ForceInternational Annealed Si Wafer Task Force
Show details for International Automated Advanced Surface Inspection Task ForceInternational Automated Advanced Surface Inspection Task Force
Show details for International SOI Wafers Task ForceInternational SOI Wafers Task Force
Hide details for International Test Methods Task ForceInternational Test Methods Task Force
6753 Reapproval of SEMI MF723-0307E (Reapproved 0412)E Practice for Conversion Between Resistivity and Dopant or Carrier Density for Boron-Doped, Phosphorous-Doped, and Arsenic-Doped Silicon
6754 Reapproval of SEMI MF674-0316 Practice for Preparing Silicon for Spreading Resistance Measurements
6755 Reapproval of SEMI MF533-0310 (Reapproved 0416) Test Method for Thickness and Thickness Variation of Silicon Wafers
6756 Reapproval of SEMI MF43-0316 Test Method for Resistivity of Semiconductor Materials
6757 Reapproval of SEMI MF42-0316 Test Method for Conductivity Type of Extrinsic Semiconducting Materials
6758 Reapproval of SEMI MF2139-1103 (Reapproved 0416) Test Method for Measuring Nitrogen Concentration in Silicon Substrates by Secondary Ion Mass Spectrometry
6759 Reapproval of SEMI MF1811-1116 Guide for Estimating the Power Spectral Density Function and Related Finish Parameters from Surface Profile Data
6760 Reapproval of SEMI MF1771-0416 Test Method for Evaluating Gate Oxide Integrity by Voltage Ramp Technique
6761 Reapproval of SEMI MF1535-1015 Test Method for Carrier Recombination Lifetime in Electronic-Grade Silicon Wafers by Noncontact Measurement of Photoconductivity Decay by Microwave Reflectance
6762 Reapproval of SEMI MF1529-1110 (Reapproved 1115) Test Method for Sheet Resistance Uniformity Evaluation by In-Line Four-Point Probe with the Dual-Configuration Procedure
6763 Reapproval of SEMI MF1239-0305 (Reapproved 0416) Test Method for Oxygen Precipitation Characteristics of Silicon Wafers by Measurement of Interstitial Oxygen Reduction
6764 Reapproval of SEMI MF1153-1110 (Reapproved 1015) Test Method for Characterization of Metal-Oxide Silicon (MOS) Structures by Capacitance-Voltage Measurements
6765 Reapproval of SEMI MF1152-0316 Test Method for Dimensions of Notches on Silicon Wafers
6787 Reapproval of SEMI MF951 - Test Method for Determination of Radial Interstitial Oxygen Variation in Silicon Wafers
6788 Reapproval of SEMI MF847 - Test Method for Measuring Crystallographic Orientation of Flats on Single Crystal Silicon Wafers by X-Ray Techniques
6789 Reapproval of SEMI MF81 - Test Method for Measuring Radial Resistivity Variation on Silicon Wafers
6790 Reapproval of SEMI MF1809 - Guide for Selection and Use of Etching Solutions to Delineate Structural Defects in Silicon
6791 Reapproval of SEMI MF1810 - Test Method for Counting Preferentially Etched or Decorated Surface Defects in Silicon Wafers
6792 Reapproval of SEMI MF1725 - Practice for Analysis of Crystallographic Perfection of Silicon Ingots
6793 Reapproval of SEMI MF1726 - Practice for Analysis of Crystallographic Perfection of Silicon Wafers
6794 Reapproval of SEMI MF1727 - Practice for Detection of Oxidation Induced Defects in Polished Silicon Wafers
6795 Reapproval of SEMI MF1617 - Test Method for Measuring Surface Sodium, Aluminum, Potassium, and Iron on Silicon and EPI Substrates by Secondary Ion Mass Spectrometry
6796 Reapproval of SEMI MF1618 - Practice for Determination of Uniformity of Thin Films on Silicon Wafers
6797 Reapproval of SEMI MF154 - Guide for Identification of Structures and Contaminants Seen on Specular Silicon Surfaces
6798 Reapproval of SEMI MF1389 - Test Method for Photoluminescence Analysis of Single Crystal Silicon for III-V Impurities
6799 Reapproval of SEMI M66 - Test Method to Extract Effective Work Function in Oxide and High-K Gate Stacks Using the MIS Flat Band Voltage-Insulator Thickness Technique
6800 Reapproval of SEMI M16 - Specification for Polycrystalline Silicon
6801 Reapproval of SEMI M17 - Guide for a Universal Wafer Grid
6853 Reapproval of SEMI MF978-1106 (Reapproved 0317) Test Method for Characterizing Semiconductor Deep Levels by Transient Capacitance Techniques
6854 Reapproval of SEMI MF928-0317, Test Method for Edge Contour of Circular Semiconductor Wafers and Rigid Disk Substrates
6855 Reapproval of SEMI MF728-1106 (Reapproved 0317)Practice for Preparing an Optical Microscope for Dimensional Measurements
6856 Reapproval of SEMI MF673-0317, Test Method for Measuring Resistivity of Semiconductor Wafers or Sheet Resistance of Semiconductor Films with a Noncontact Eddy-Current Gauge
6857 Reapproval of SEMI MF28-0317Test Method for Minority Carrier Lifetime in Bulk Germanium and Silicon by Measurement of Photoconductivity Decay
Show details for Silicon Wafer CommitteeSilicon Wafer Committee
Show details for TraceabilityTraceability

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