SEMI International Standards
Date Prepared: 10/28/2011
Revised (if Applicable):

Name of Task Force (TF): Impurities and Defects in HB-LED Sapphire Wafers

Global Technical Committee: HB-LED
Originating Technical Committee Region: North America

1. Charter: (State the objective of the proposed TF.)
Investigate the allowable impurities and defects in HB-LED sapphire wafers.
2. Scope: (Define the specific activities that the TF will conduct.)
This Task Force will define and/or measure critical impurities and defects in sapphire wafers and the metrology intended to measure them.

The Task Force will create standards related to these impurities and defects for use by HB-LED sapphire wafer makers and producers of related devices.

Topics to be considered may include, but are not limited to:
1. Bulk Crystal Defects
2. Bulk Crystal Impurities
3. Surface Defects
4. Surface Impurities

3. Formal linkages with TFs in other Regions/Locales: (Show each associated TF and its parent global technical committee; indicate nature of relationship – global TF, observer TF, etc.)
Some overlap with members of the Asian and European SEMI Standards groups might occur, as well as NA HB-LED Wafer TF and the NA HB-LED Process Automation TF
4. Formation Date:(TF formed on)

Task Force formed on: 10/28/2011
Task Force approved by Committee/GCS on: 10/28/2011