SEMI International Standards
Date Prepared: 01/09/2020
Revised (if Applicable): 09/30/2021

Name of Task Force (TF): Silicon Carbide Substrate Task Force

Global Technical Committee: Compound Semiconductor Materials
Originating Technical Committee Region: China

1. Charter: (State the objective of the proposed TF.)

The task force is chartered to investigate and develop specifications for Silicon carbide substrate.

2. Scope: (Define the specific activities that the TF will conduct.)

Perform on standardization technologically important material parameters of Silicon carbide substrate.
Address specification for properties of Silicon carbide substrate products and corresponding testing techniques.

Focus is set to generate

A basic standardization document which addresses the technologically important material parameters of Silicon carbide substrate. This master document will serve as a framework for subsequent specific standards.

A specific standard addressing the geometrical and mechanical parameters of Silicon carbide substrate, e.g. diameter, thickness, edge contour etc.

Other specific standardization issues shall be addressed and completed as required by concurrent technological development .

3. Formal linkages with TFs in other Regions/Locales: (Show each associated TF and its parent global technical committee; indicate nature of relationship – global TF, observer TF, etc.)
Europe SiC Material and Wafer Specification TF
4. Formation Date:(TF formed on)

Task Force formed on: 09/28/2020
Task Force approved by Committee/GCS on: 09/28/2020