TFOF for SiC Material and Wafer Specification TF
SEMI International Standards
Date Prepared: 06/01/1999
Revised (if Applicable): 07/19/1999

Name of Task Force (TF): SiC Material and Wafer Specification TF

Global Technical Committee: Compound Semiconductor Materials
Originating Technical Committee Region: Europe

1. Charter: (State the objective of the proposed TF.)
This activity addresses the specification of polished 4H and 6H monocrystalline SiC wafers
2. Scope: (Define the specific activities that the TF will conduct.)
Focus is set to generate

a basic standardization document which addresses the technologically important material parameters of SiC, including the structural 4H and 6H modifications. This master document will serve as a framework for subsequent specific standards,
a specific standard addressing the geometrical and mechanical parameters of SiC wafers, e.g. diameter, thickness, edge contour etc.

Other specific standardization issues shall be addressed and completed as required by concurrent technological development .

3. Formal linkages with TFs in other Regions/Locales: (Show each associated TF and its parent global technical committee; indicate nature of relationship – global TF, observer TF, etc.)

4. Formation Date:(TF formed on)

Task Force formed on:
Task Force approved by Committee/GCS on: