SEMI International Standards
Standards New Activity Report Form (SNARF)
Date Prepared: 01/28/2021Revised (if Applicable):

Document Number: 6717
SNARF for: New Standard: Test Method for quantifying TSDs in 4H-SiC Crystals

Originating Global Technical Committee: Compound Semiconductor Materials
Originating TC Chapter: Europe
Task Force (TF) in which work is to be carried out: Test Methods Task Force
Note: If a new task force is needed, also submit a task force organization form (TFOF)

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1. Rationale:
a. Describe the need or problem addressed by this activity.
(Indicate the customer, what benefits they will receive, and if possible, quantify the impact on the return on investment [ROI] if the Document is implemented.)
Threading screw dislocations (TSDs) are detrimental to the yield and the performance of several types of 4H-SiC-based devices. Thus, there is a need to specify the TSD density of a substrate material (or an epi-layer) sold to a customer using these for device fabrication, based on a non-destructive measurement technique.
By using a standardized and reliable method for specification, the appropriate quality of the substrate material can be chosen, which either may reduce costs if the requirements regarding TSD density is low, or may increase the yield if the supplied substrates (or epi-layers) are of sufficiently high quality.
X-ray topography is the method of choice for this problem, but different approaches or measurement parameters may yield varying results. Thus, the measurement and evaluation parameters need to be defined to obtain comparable results.



b. Estimate effect on industry.
2: Major effect on an industry sector - identify the relevant sector
Sector or Company Information: SiC-based electronics

c. Estimate technical difficulty of the activity.
II: Some Difficulty - Disagreements on known requirements exist but developing consensus is possible

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2. Scope:
a: Describe the technical areas to be covered or addressed by this Document development activity. For Subordinate Standards, list common concepts or criteria that the Subordinate Standard inherits from the Primary Standard, as well as differences from the Primary Standard:
This document will specify the method for detection and quantification of TSDs in 4H-SiC materials by X-ray topography. It shall define the measurement procedure, the requirements to the measurement data and the procedure for analyzing the data to obtain a TSD quantification.

b: Expected result of activity
New Standard or Safety Guideline (including replacement of an existing Standard or Safety Guideline)

For a new Subordinate Standard, identify the Primary Standard here:




For Standards, identify the Standard Subtype below:
Test Method

Miscellaneous (describe below):

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3. Projected Timetable for Completion:

a: General Milestones
a. Activity Start: 01/28/2021b. 1st Draft by: 08/31/2021
c. (Optional) Informational Ballot by: d. Letter Ballot by: 11/01/2021
e. TC Chapter Approval By:01/28/2022

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4. Liaisons with other Global Technical Committees/TC Chapters/Subcommittees/TFs:
a.
List SEMI global technical committees, TC Chapters, subcommittees, or task forces in your or other Regions/Locales that should be kept informed regarding the progress of this activity. (Refer to SEMI Standards organization charts and global technical committee charters and scopes as needed.)
Silicon Wafer

b. List any planned Type I Liaisons with external nonprofit organizations (e.g., SDO) that should receive Draft Documents from Standards staff for feedback during this activity and be notified when the Letter Ballot is issued (refer to Procedure Manual § 7):


c. Intercommittee Ballots:
will be issued – identify the recipient global technical committee(s):

Identify the recipient global technical committee(s):
Silicon Wafer
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5. Safety Considerations:
The resulting document is expected:
NOT to be a Safety Guideline

NOTE FOR "to be a Safety Guideline": When all safety-related information is removed from the Document, the Document is NOT technically sound and complete - Refer to Section 15.1 of the Regulations for special procedures to be followed.

NOTE FOR "NOT to be a Safety Guideline": When all safety-related information is removed from the Document, the Document is still technically sound and complete.

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6. Intellectual Property Considerations:
a. For a new Standard or Safety Guideline and for any part to be modified or added in a Revision of published Standards and Safety Guidelines:
the use of patented technology is NOT required.

If "patented technology is intended to be included in the proposed Standard(s) or Safety Guideline(s) " is selected above, then also check one:


b. For Revision, Reapproval, Reinstatement, or Withdrawal of existing Standard(s) and Safety Guideline(s):
there is no known material patented technology necessary to use or implement the Standard(s) and Safety Guideline(s)

c. The body of the Document and any Appendices, Complementary Files, Related Information sections, or Various Materials that may or may not be a part of the Document by reference:
the incorporation of Copyrighted Item will NOT be required



NOTE FORthe use of patented technology or the incorporation of Copyrighted Item(s) is NOT required’: If in the course of developing the Document, it is determined that the use of patented technology or Copyrighted Item(s) is necessary for the Document, the provisions of Regulations § 16 must be followed.

NOTE FORwill incorporate Copyrighted Item’: A copyright release letter must be obtained from the copyright owner prior to publication.

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7. Comments, Special Circumstances:
None.

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8. TC Member Review:
took place between (put dates below ) before approval at the TC Chapter Meeting, or

Member Review Start Date; 1/14/2021
Member Review End Date: 1/28/2021

NOTE FOR ‘TC Member Review’ is required by the Regulations for a period of at least two weeks
before approval of a new, or a major revision of an existing, Standard or Safety Guideline. (Refer to Regulations ¶ 8.2.1)
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9. SNARF Approval Dates:
TC Chapter or GCS01/28/2021
Recorded in TC Minutes01/28/2021

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10. SNARF Extension Dates:
TC Chapter Extension Granted on
Extension Expires on