SEMI International Standards
SEMI New Activity Report Form (SNARF)



Activity Number: 5654
SNARF for: Line Item Revision of M49-0613, Guide for Specifying Geometry Measurements Systems for Silicon Wafers for the 130 nm to 16 nm Technology Generations (EE from 2mm to 1.5mm at 16nm technology generation)


Originating Global Technical Committee: Silicon Wafer
Originating Technical Committee Region: North America
Task Force in which work is to be carried out: International Advanced Wafer Geometry Task Force


1. Rationale: Line item change to reflect 450 mm wafers edge exclusion reduction from 2mm to 1.5mm at 16nm technology generation. This change will increase the wafer PUA.
Rate the Estimated Effect on the Industry
2: Major effect on an industry sector - identify the relevant sector

Rate the Estimated Technical Difficulty of the Activity
I: No Difficulty - Proven concepts and techniques exist or quick agreement anticipated

2. Scope:
a: Define the areas to be covered or addressed by this activity or document:
Table4 Metrology Specific Equipment Characteristics for 45, 32, 22, and 16nm Technology Generations


1.10 ZDD, nm/mm2 16 sectors (s=22.5˚)
From:
Nominal

-35 at radius Rnom -2mm or
-354 at radius Rnom -1mm

to:
Nominal

-35 at radius Rnom -2mm (for 450 wafers Rnom -1.5mm)
or -354 at radius Rnom -1mm




3.1.1 All Parameters except Near-Edge Geometry (ERO)
From:

≥1.5
Performance parameters are to be verified with nominal edge exclusion ≥2mm. Instrument must be capable of reporting to nominal edge exclusion ≥1mm. As a guide, the extended performance for nominal edge exclusion <2mm should not exceed the performance (3, matching, bias) by more than 100% as compared to ≥2mm edge exclusion given appropriate reference material.

To:

≥1.5

Performance parameters are to be verified with nominal edge exclusion ≥2mm or ≥1.5mm for 450mm wafers. Instrument must be capable of reporting to nominal edge exclusion ≥1mm. As a guide, the extended performance for nominal edge exclusion <2mm or <1.5mm for 450mm wafers should not exceed the performance (3, matching, bias) by more than 100% as compared to ≥2mm or ≥1.5mm for 450mm wafers edge exclusion given appropriate reference material.

From:

3.1.2 Near-Edge Geometry (ERO) Parameters
3.1.2.1 ESFQR
3.1.2.2 ZDD


≥1
≥2 or ≥1
Note : Although ITRS does not suggest using edge exclusions less than 2mm for future generation device manufacturing, it is useful for starting materials edge geometry metrics to be evaluated using a 1mm edge exclusion. These reduced edge exclusion metrics of edge roll-off provide sensitive indicators of starting material process capability when using a 2mm edge exclusion during device manufacturing. Only ESFQR and ZDD metrics are specified at this reduced edge exclusion of 1mm.

To:

≥1
≥2 or ≥1 ≥1.5 or ≥1 for 450mm wafers

Note : Although ITRS does not suggest using edge exclusions less than 2mm or 1.5mm for 450mm wafers for future generation device manufacturing, it is useful for starting materials edge geometry metrics to be evaluated using a 1mm edge exclusion. These reduced edge exclusion metrics of edge roll-off provide sensitive indicators of starting material process capability when using a 2mm or 1.5mm for 450mm wafers edge exclusion during device manufacturing. Only ESFQR and ZDD metrics are specified at this reduced edge exclusion of 1mm.


b: Expected result of activity
Revision to an existing Standard/Guideline

3. Projected Timetable for Completion:
a: General Milestones
a. Activity Start: 10/01/2013b. 1st Draft by: 12/01/2013
c. Preballot by: d. Technical Ballot by: 03/01/2014
e. Committee Approval By:07/01/2014




Safety Considerations:
The resulting document is expected NOT to be a Safety Guideline


Intellectual Property Considerations:
a. In complying with the standard or safety guideline to be developed, the use of patented technology or a copyrighted item(s) is NOT required
b. The body of the standard and any appendices or related information sections will NOT include copyrighted material

Comments, Special Circumstances: None.

Approval: Activity approved by Committee/GCS on October 10, 2013