SNARF for Doc 7408

SEMI International Standards
Standards New Activity Report Form (SNARF)

Date Prepared:

Revised (if Applicable):

Document Number: 7408
SNARF for: New Standard: Specification For Bonding Silicon Carbide Homoepitaxial Wafer

Originating Global Technical Committee: Compound Semiconductor Materials

Originating TC Chapter: China

Task Force (TF) in which work is to be carried out: SiC Epitaxial Wafer Task Force

Note: If a new task force is needed, also submit a task force organization form (TFOF)

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1. Rationale:
a. Describe the need or problem addressed by this activity.
(Indicate the customer, what benefits they will receive, and if possible, quantify the impact on the return on investment [ROI] if the Document is implemented.)
Although the silicon carbide (SiC) market is not as fervent as it was in the previous two years, it continues to maintain a compound annual growth rate (CAGR) of over 30% and is steadily penetrating the traditional silicon semiconductor market. Sustaining this growth trajectory primarily hinges on reducing costs. Due to the low crystal growth yield and high energy consumption of SiC, the substrate remains the most cost-intensive segment of the SiC industry chain, making it fundamentally unable to compete with the price advantage of silicon. However, a new technology called bonding silicon carbide has emerged to address this issue.
Bonding silicon carbide involves using techniques such as ion implantation and surface activiated bonding(SAB) to attach a very thin layer of high-quality monocrystal SiC onto low-value SiC crystals (e.g., RD-grade mono 4H-SiC or poly 3C-SiC), serving as a template for epitaxial growth in place of expensive industrial-grade monocrystal substrates. A single industrial-grade monocrystal substrate can be used to produce 50 bonding SiC wafers, significantly improving the utilization rate of high-quality monocrystal SiC materials and reducing material costs.
In addition to cost advantages, if poly 3C-SiC is used as the supporting material in bonding SiC wafer, certain device performance improvements can also be achieved. Since the doping concentration of poly 3C-SiC can be one to two orders of magnitude higher than that of mono 4H-SiC, its resistivity can be made lower. This translates into devices with lower on-resistance and smaller die areas, thereby increasing the number of devices produced per wafer.
Currently, mono 4H-SiC substrates and epitaxial layers have established comprehensive standard systems (SEMI 55, SEMI M92). However, standards for bonding silicon carbide remain underdeveloped. There is still a lack of standards in the epitaxial domain, and for substrates, only SEMI M94—which specifies poly 3C-SiC as the support material—exists. There are no standardized specifications for bonding substrates using mono 4H-SiC support materials. Therefore, it is imperative to develop product standards specifically for homoepitaxial wafers of bonding silicon carbide. This will provide guidance and reference for manufacturing and procurement processes across the industry chain, thereby promoting the healthy and orderly development of the silicon carbide sector.

b. Estimate effect on industry.
2: Major effect on an industry sector - identify the relevant sector
Sector or Company Information: Directly affect silicon carbide substrate and epitaxy industries, and indirectly affect silicon carbide device industry.

c. Estimate technical difficulty of the activity.
II: Some Difficulty - Disagreements on known requirements exist but developing consensus is possible

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2. Scope:
a: Describe the technical areas to be covered or addressed by this Document development activity. For Subordinate Standards, list common concepts or criteria that the Subordinate Standard inherits from the Primary Standard, as well as differences from the Primary Standard:
Scope

This Specification specifies the parameters of bonding SiC homoepitaxial wafers with a single or multiple epitaxial layers grown on the bonding substrate with the structure of a 4H-SiC surface mono layer and a mono 4H-SiC or poly 3C-SiC supporting layer, up to and including 200 靗ochm total epitaxial thickness.

Dimensional requirements are provided for the following categories of epitaxial wafers: 150.0 mm and 200.0 mm bonding SiC homoepitaxial wafers.

2. Referenced standards and documents
3. Terminology
4. Technical requirements (technical parameters and indexes of bonding SiC homoepitaxial wafer )
5. Inspection methods (measurement methods for each technical parameters of bonding SiC homoepitaxial wafer )
6. Sampling inspection regulations
7. Marking, packaging, transportation and storage

b: Expected result of activity
New Standard or Safety Guideline (including replacement of an existing Standard or Safety Guideline)

For a new Subordinate Standard, identify the Primary Standard here:

For Standards, identify the Standard Subtype below:
Specification

Miscellaneous (describe below):

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3. Projected Timetable for Completion:

a: General Milestones

a. Activity Start: 10/01/2025	b. 1st Draft by: 06/01/2026
c. (Optional) Informational Ballot by:	d. Letter Ballot by: 07/01/2026
e. TC Chapter Approval By:12/01/2026

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4. Liaisons with other Global Technical Committees/TC Chapters/Subcommittees/TFs:
a. List SEMI global technical committees, TC Chapters, subcommittees, or task forces in your or other Regions/Locales that should be kept informed regarding the progress of this activity. (Refer to SEMI Standards organization charts and global technical committee charters and scopes as needed.)

b. List any planned Type I Liaisons with external nonprofit organizations (e.g., SDO) that should receive Draft Documents from Standards staff for feedback during this activity and be notified when the Letter Ballot is issued (refer to Procedure Manual § 7):

c. Intercommittee Ballots:
will not be issued

Identify the recipient global technical committee(s):

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5. Safety Considerations:
The resulting document is expected:

NOT to be a Safety Guideline

NOTE FOR "to be a Safety Guideline": When all safety-related information is removed from the Document, the Document is NOT technically sound and complete - Refer to Section 15.1 of the Regulations for special procedures to be followed.

NOTE FOR "NOT to be a Safety Guideline": When all safety-related information is removed from the Document, the Document is still technically sound and complete.

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6. Intellectual Property Considerations:
Note: Both a: and b: below should be checked for Revision of existing Standard(s) and Safety Guideline(s).

a. For a new Standard or Safety Guideline and for any part to be modified or added in a Revision of published Standards and Safety Guidelines:
the use of patented technology is NOT required.

If "patented technology is intended to be included in the proposed Standard(s) or Safety Guideline(s) " is selected above, then also check one:

b. For Revision, Reapproval, Reinstatement, or Withdrawal of existing Standard(s) and Safety Guideline(s):

c. The body of the Document and any Appendices, Complementary Files, Related Information sections, or Various Materials that may or may not be a part of the Document by reference:

the incorporation of Copyrighted Item will NOT be required

NOTE FOR ‘the use of patented technology or the incorporation of Copyrighted Item(s) is NOT required’: If in the course of developing the Document, it is determined that the use of patented technology or Copyrighted Item(s) is necessary for the Document, the provisions of Regulations § 16 must be followed.

NOTE FOR ’will incorporate Copyrighted Item’: A copyright release letter must be obtained from the copyright owner prior to publication.

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7. Comments, Special Circumstances:
None.

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8. TC Member Review:
took place between (put dates below) before approval by the GCS, or

Member Review Start Date; 10/01/2025
Member Review End Date: 10/14/2025

NOTE FOR ‘TC Member Review’ is required by the Regulations for a period of at least two weeks
before approval of a new, or a major revision of an existing, Standard or Safety Guideline. (Refer to Regulations ¶ 8.2.1)
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9. SNARF Approval Dates:

TC Chapter or GCS	10/22/2025
Recorded in TC Minutes	11/07/2025

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10. SNARF Extension Dates:

TC Chapter Extension Granted on

Extension Expires on