SEMI International Standards
SEMI New Activity Report Forms (SNARFs)
& SEMI Task Force Organization Forms (TFOFs)
Below you will find the TFOFs of all the task forces actively working in each region. The TFOF contains the charter and purpose of each task force.
The SNARFs that are listed under each task force are the individual activities of the task force. While the majority of these activities lead to the creation or revision of a standard, there are some activities which are focused on exploring and expanding the program.
If you have any further questions on a specific activity, contact your local Standards staff. A listing of global SEMI Standards staff can be found on the contact information page.
Blank forms:
TFOF (DOC 115K) (Sept 2024)
SNARF (DOC 133K) (April 2026)
The listing of SNARFs and TFOFs below are sorted by Global Technical Committee, and then by the region that approved the TFOF.
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 | 3D Packaging and Integration |
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 | Automated Test Equipment |
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 | Automation Technology |
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 | Compound Semiconductor Materials |
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 | EH&S |
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 | Facilities |
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 | Flat Panel Display (FPD) - Materials & Components |
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 | Flat Panel Display (FPD) - Metrology |
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 | Flexible Hybrid Electronics (FHE) |
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 | Gases |
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 | HB-LED |
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 | Information & Control |
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 | Liquid Chemicals |
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 | MEMS / NEMS |
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 | Metrics |
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 | Micropatterning |
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 | Photovoltaic |
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 | Photovoltaic (PV) - Materials |
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 | Physical Interfaces & Carriers |
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 | Silicon Wafer |
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 | Europe |
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 | International |
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 | Japan |
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 | International Polished Wafers Task Force |
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 | International Test Methods Task Force |
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| | | 6570 | New Standard: Guide for Measuring Bulk Micro Defect Density and Denuded Zone Width in Annealed Silicon Wafers by a Laser-Scattering Tomography Technique |  |
| | | 6687 | Revision of M51: Test Method for Characterizing Silicon Wafer by Gate Oxide Integrity |  |
| | | 7319 | Line-item revision to SEMI M88-0119, Practice for Sample Preparation Methods for Measuring Minority Carrier Diffusion Length in Silicon Wafers by Surface Photovoltage Methods |  |
| | | 7392 | Line-item revision to SEMI M89-0721, Test Method for Recombination Lifetime of the Epilayer of the Silicon Epitaxial Wafer (p/p+, n/n+) by the Short Wavelength Excitation Microwave Photoconductive Decay Method |  |
| | | 7437 | Revision to SEMI M85-0120, Guide for the Measurement of Trace Metal Contamination on Silicon Wafer Surface by Inductively Coupled Plasma Mass Spectrometry |  |
| | | 7439 | Auxiliary Information: BACKGROUND, RATIONALE, AND APPLICATION GUIDELINES FOR SEMI M95:TEST METHOD FOR NET CARRIER DENSITY AND RESISTIVITY OF SILICON EPITAXIAL LAYER BY CAPACITANCE-VOLTAGE MEASUREMENTS WITH AN EVAPORATED METAL SCHOTTKY DIODE |  |
| | | 7468 | Revision to SEMI M95-0925, TEST METHOD FOR NET CARRIER DENSITY AND RESISTIVITY OF SILICON EPITAXIAL LAYER BY CAPACITANCE-VOLTAGE MEASUREMENTS WITH AN EVAPORATED METAL SCHOTTKY DIODE |  |
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 | Japan TC Chapter of Global Technical Tommittee |
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 | Japan Test Method Task Force |
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 | North America |
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 | Traceability |
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