SEMI International Standards
SEMI New Activity Report Form (SNARF)



Activity Number: 5474
SNARF for: New Standard: Guide for CMP and Micro-bump Processes for Frontside TSV Integration


Originating Global Technical Committee: 3DS-IC
Originating Technical Committee Region: Taiwan
Task Force in which work is to be carried out: 3DS IC Middle End Process Task Force


1. Rationale: To speed up the volume production of 3DS-IC products, a generic middle-end process flow is needed to communicate the frontend and backend processes. The quality criteria and metrology methodology of the key modules such as TSV, CMP and micro-bump are developed to ensure the high yield of the middle-end process. Therefore, this guide will suggest generic middle-end process flow to define acceptable TSV and CMP quality criteria, and develop methodology and measuring procedure for micro-bump. The guide will provide criteria and common baselines of the middle-end process for related upstream and downstream manufacturers in fabricating the 3DS-IC products.
Rate the Estimated Effect on the Industry
2: Major effect on an industry sector - identify the relevant sector

Rate the Estimated Technical Difficulty of the Activity
II: Some Difficulty - Disagreements on known requirements exist but developing consensus is possible

2. Scope:
a: Define the areas to be covered or addressed by this activity or document:
Propose a frontside TSV integration scheme as one of the generic middle-end process flow. The flow includes steps such as TSV formation, RDL formation, CMP, temporary carrier bonding, wafer thinning, micro-bump formation, carrier debonding, etc.

Define acceptable CMP criteria of TSV in terms of dishing, erosion, and voids. CMP criteria can be determined by metrology technology such as Alpha stepper, Ultrasonic, Coherence Interferometry, and etc. TSV formation and reveal are significantly dependent on the performance of CMP process. The outcome of the high CMP quality yields better TSV connectivity.

Develop criteria for measurement methodology for micro-bump dimensions, including sampling rate, sampling sites and mapping, reference datum, and survey available metrology tools. The outcome will be an important bridge communication between IC design firms and associated foundry and packaging fabs. The assumption of DWL and DDL are that testing data is available for known good die status.


b: Expected result of activity
New Standard

3. Projected Timetable for Completion:
a: General Milestones
a. Activity Start: 06/06/2012b. 1st Draft by: 11/15/2012
c. Preballot by: 01/30/2013d. Technical Ballot by: 03/30/2013
e. Committee Approval By:06/06/2012




Safety Considerations:
The resulting document is expected NOT to be a Safety Guideline


Intellectual Property Considerations:
a. In complying with the standard or safety guideline to be developed, there is no alternative to the use of patented technology or copyrighted item(s)
b. The body of the standard and any appendices or related information sections will NOT include copyrighted material

Comments, Special Circumstances: None.

Approval: Activity approved by Committee/GCS on June 6, 2012






File Attachment Icon
SNARF_Middle-end process.doc