SEMI International Standards
Standards Locale: Japan
Committee: Silicon Wafer
Place of Meeting: Tokyo Big Sight
Date of Meeting: 12/17/2015
Meeting End Date: 12/17/2015
Recording SEMI Standards Staff: Junko Collins
CER Posted to Web: 12/30/2015


Leadership Changes
None.

Committee Structure Changes
None.

Ballot Results

Passed ballots and line items will be submitted to the ISC Audit & Review Subcommittee for procedural review.
Failed ballots and line items were returned to the originating task forces for re-work and re-balloting.
Document #
Document Title
Committee Action
A&R Forms for Approved Ballots
5770NEW STANDARD: GUIDE FOR MEASURING BULK MICRO DEFECT DENSITY AND DENUDED ZONE WIDTH IN ANNEALED SILICON WAFERSFailed5770_Ballot Report (2015.12.17).pdf5770_Ballot Report (2015.12.17).pdf
5855ALINE ITEM REVISION OF SEMI MF1771-1110
TEST METHOD FOR EVALUATING GATE OXIDE INTEGRITY BY VOLTAGE RAMP TECHNIQUE
LI1: Correct the source and its designations for the referenced standards in section 4.2
Passed as balloted(super clean)5855A_Ballot Report (2015.12.17).pdf5855A_Ballot Report (2015.12.17).pdf
5893Revision of SEMI M1-0915 SPECIFICATIONS FOR POLISHED SINGLE CRYSTAL SILICON WAFERSPassed as balloted5893_Ballot report (2015.12.17).pdf5893_Ballot report (2015.12.17).pdf
5910LINE ITEM REVISION OF SEMI M57-0515, SPECIFICATIONS FOR SILICON ANNEALED WAFERS
IL1: Correct the title of this standard from “Specifications” to “Specification”
Passed as balloted(super clean)5910_Ballot report (2015.12.17).pdf5910_Ballot report (2015.12.17).pdf
5929LINE ITEM REVISION OF SEMI MF42-1105 (Reapproved 0611)
TEST METHODS FOR CONDUCTIVITY TYPE OF EXTRINSIC SEMICONDUCTING MATERIALS
IL1: Correct the title of this standard from “Test Methods” to “Test Method”
Passed as balloted5929_Ballot report (2015.12.17).pdf5929_Ballot report (2015.12.17).pdf
5930LINE ITEM REVISION OF SEMI MF43-0705 (Reapproved 0611)
TEST METHODS FOR RESISTIVITY OF SEMICONDUCTOR MATERIALS
IL1: Correct the title of this standard from “Test Methods” to “Test Method”
Passed as balloted5930_Ballot report (2015.12.17).pdf5930_Ballot report (2015.12.17).pdf
5931REAPPROVAL OF SEMI MF81-1105 (Reapproved 0611)
TEST METHOD FOR MEASURING RADIAL RESISTIVITY VARIATION ON SILICON WAFERS
Passed as balloted(super clean)5931_Ballot report (2015.12.17).pdf5931_Ballot report (2015.12.17).pdf
5932REAPPROVAL OF SEMI MF154-1105 (Reapproved 0611)
GUIDE FOR IDENTIFICATION OF STRUCTURES AND CONTAMINANTS SEEN ON SPECULAR SILICON SURFACES
Passed as balloted(super clean)5932_Ballot report (2015.12.17).pdf5932_Ballot report (2015.12.17).pdf
5933LINE ITEM REVISION OF SEMI MF674-0705 (Reapproved 0611)
PRACTICES FOR PREPARING SILICON FOR SPREADING RESISTANCE MEASUREMENTS
LI1: Correct the title of this standard from “Practices” to “Practice”
Passed as balloted5933_Ballot report (2015.12.17).pdf5933_Ballot report (2015.12.17).pdf
5934LINE ITEM REVISION OF SEMI MF847-0705 (Reapproved 0611)
TEST METHODS FOR MEASURING CRYSTALLOGRAPHIC ORIENTATION OF FLATS ON SINGLE CRYSTAL SILICON WAFERS BY X-RAY TECHNIQUES
LI1: Correct the title of this standard from “Test Methods” to “Test Method”
Passed as balloted5934_Ballot report (2015.12.17).pdf5934_Ballot report (2015.12.17).pdf
5935REAPPROVAL OF SEMI MF951-0305 (Reapproved 0211)
TEST METHOD FOR DETERMINATION OF RADIAL INTERSTITIAL OXYGEN VARIATION IN SILICON WAFERS
Passed as balloted (supper clean)5935_Ballot report (2015.12.17).pdf5935_Ballot report (2015.12.17).pdf
5936LINE ITEM REVISION OF SEMI MF1152-0305 (Reapproved 0211)
TEST METHODS FOR DIMENSIONS OF NOTCHES ON SILICON WAFERS
LI1: Correct the title of this standard from “Test Methods” to “Test Method”
Passed as balloted (supper clean)5936_Ballot report (2015.12.17).pdf5936_Ballot report (2015.12.17).pdf
5937REAPPROVAL OF SEMI MF1239-0305 (Reapproved 0211)
TEST METHOD FOR OXYGEN PRECIPITATION CHARACTERISTICS OF SILICON WAFERS BY MEASUREMENT OF INTERSTITIAL OXYGEN REDUCTION
Passed as balloted (supper clean)5937_Ballot report (2015.12.17).pdf5937_Ballot report (2015.12.17).pdf
5938REAPPROVAL OF SEMI MF2139-1103 (Reapproved 1110)
TEST METHOD FOR MEASURING NITROGEN CONCENTRATION IN SILICON SUBSTRATES BY SECONDARY ION MASS SPECTROMETRY
Passed as balloted (supper clean)5938_Ballot report (2015.12.17).pdf5938_Ballot report (2015.12.17).pdf
5939REAPPROVAL OF SEMI MF1617-0304 (Reapproved 0710)
TEST METHOD FOR MEASURING SURFACE SODIUM, ALUMINUM, POTASSIUM, AND IRON ON SILICON AND EPI SUBSTRATES BY SECONDARY ION MASS SPECTROMETRY
Passed as balloted (supper clean)5939_Ballot report (2015.12.17).pdf5939_Ballot report (2015.12.17).pdf
5940REAPPROVAL OF SEMI MF533-0310
TEST METHODS FOR THICKNESS AND THICKNESS VARIATION OF SILICON WAFERS
Passed as balloted (supper clean)5940_Ballot report (2015.12.17).pdf5940_Ballot report (2015.12.17).pdf



Ratification Ballot Results
None.

Activities Approved by the GCS between meetings of TC Chapter meeting
None.

Authorized Activities


#
Type
SC/TF/WG
Details
5069SNARFInternational 450 mm Shipping Box TFWithdrawn, New Standard: Specification for 450 mm Wafer Shipping System
Joint GCS approval needed for official approval
TBDSNARFJA Shipping Box TFReapproval of M45-1110
TBDSNARFInternational Epitaxial Wafer TFRevision of SEMI M62-0515, Specifications for Silicon Epitaxial Wafers
Need TC members review for official approval
TBD SNARFInternational Test Method TF SNARF for NEW STANDARD “Test method for nitrogen content in silicon by charged particle activation analysis”
Need TC members review for official approval
TBDSNARFInt’l Advanced Automated Surface Inspection TFRevision of SEMI MF1811-xxxx GUIDE FOR ESTIMATING THE POWER SPECTRAL DENSITY FUNCTION AND RELATED FINISH PARAMETERS FROM SURFACE PROFILE DATA
Need TC members review for official approval
Note: SNARFs and TFOFs are available for review on the SEMI Web site at:
http://downloads.semi.org/web/wstdsbal.nsf/TFOFSNARF




Authorized Ballots


#
When
SC/TF/WG
Details
TBDCycle 1, 2016JA Shipping Box TFReapproval of M45-1110
5744AEarliest as possible International AWG TF5744A: Line Item Revision to M49-1014, GUIDE FOR SPECIFYING GEOMETRY MEASUREMENT SYSTEMS FOR SILICON WAFERS FOR THE 130 nm TO 16 nm TECHNOLOGY GENERATIONS
Adjudication at the NA Silicon Wafer TC Chapter meeting in conjunction with SEMICON West 2016

SNARF(s) Granted a One-Year Extension
None.

SNARF(s) Cancelled
None.

Standard(s) to receive Inactive Status
None.

Special Announcements of the Committee (Workshops, Programs, etc.)
None.

Next Meeting
13:30 - 17:00 March 11, 2016 at SEMI Japan Office